Analysis of the dynamics of reactions of SiCl2 at Si(100) surfaces

Keisuke Anzai, Nilson Kunioshi, Akio Fuwa

    Research output: Contribution to journalArticle

    6 Citations (Scopus)

    Abstract

    The dynamics of reactions of SiCl2 at Si(100) surfaces was investigated through the molecular orbital method at the B3LYP/6-31G(d,p) level of theory, with the surface being modeled using clusters of silicon atoms. The intradimer adsorption of a SiCl2 molecule proceeded with no energy barrier, and in the structure of the product of the adsorption reaction the Si atom of the SiCl2 adsorbate formed a triangular structure with the two Si atoms of the surface dimer, in agreement with theoretical predictions published recently in the literature for a small cluster. However, the dynamics reported in this work indicates that SiCl2 undergoes molecular adsorption at the silicon surface, in contrast with the dissociative adsorption suggested by some available kinetic models. Intradimer adsorption of a second SiCl2 molecule, and interdimer adsorptions of a first, a second, and a third SiCl2 molecule were also seen to proceed without significant energy barriers, suggesting that the formation of the first additional layer of silicon atoms on the surface would be fast if the adsorption of SiCl2 were the only type of reaction proceeding in the system. The diffusion of the SiCl2 adsorbate over the surface and its desorption from the surface were found to have comparable activation energies, so that these reactions are expected to compete at high temperatures.

    Original languageEnglish
    Pages (from-to)410-417
    Number of pages8
    JournalApplied Surface Science
    Volume392
    DOIs
    Publication statusPublished - 2017 Jan 15

    Fingerprint

    Adsorption
    Silicon
    Atoms
    Energy barriers
    Adsorbates
    Molecules
    Molecular orbitals
    Dimers
    Desorption
    Activation energy
    Kinetics
    Temperature

    Keywords

    • Cluster model
    • Molecular orbital method
    • Reaction dynamics
    • Silicon surface growth

    ASJC Scopus subject areas

    • Surfaces, Coatings and Films

    Cite this

    Analysis of the dynamics of reactions of SiCl2 at Si(100) surfaces. / Anzai, Keisuke; Kunioshi, Nilson; Fuwa, Akio.

    In: Applied Surface Science, Vol. 392, 15.01.2017, p. 410-417.

    Research output: Contribution to journalArticle

    @article{cd8b81dda16d4f098a88c15d02218beb,
    title = "Analysis of the dynamics of reactions of SiCl2 at Si(100) surfaces",
    abstract = "The dynamics of reactions of SiCl2 at Si(100) surfaces was investigated through the molecular orbital method at the B3LYP/6-31G(d,p) level of theory, with the surface being modeled using clusters of silicon atoms. The intradimer adsorption of a SiCl2 molecule proceeded with no energy barrier, and in the structure of the product of the adsorption reaction the Si atom of the SiCl2 adsorbate formed a triangular structure with the two Si atoms of the surface dimer, in agreement with theoretical predictions published recently in the literature for a small cluster. However, the dynamics reported in this work indicates that SiCl2 undergoes molecular adsorption at the silicon surface, in contrast with the dissociative adsorption suggested by some available kinetic models. Intradimer adsorption of a second SiCl2 molecule, and interdimer adsorptions of a first, a second, and a third SiCl2 molecule were also seen to proceed without significant energy barriers, suggesting that the formation of the first additional layer of silicon atoms on the surface would be fast if the adsorption of SiCl2 were the only type of reaction proceeding in the system. The diffusion of the SiCl2 adsorbate over the surface and its desorption from the surface were found to have comparable activation energies, so that these reactions are expected to compete at high temperatures.",
    keywords = "Cluster model, Molecular orbital method, Reaction dynamics, Silicon surface growth",
    author = "Keisuke Anzai and Nilson Kunioshi and Akio Fuwa",
    year = "2017",
    month = "1",
    day = "15",
    doi = "10.1016/j.apsusc.2016.09.039",
    language = "English",
    volume = "392",
    pages = "410--417",
    journal = "Applied Surface Science",
    issn = "0169-4332",
    publisher = "Elsevier",

    }

    TY - JOUR

    T1 - Analysis of the dynamics of reactions of SiCl2 at Si(100) surfaces

    AU - Anzai, Keisuke

    AU - Kunioshi, Nilson

    AU - Fuwa, Akio

    PY - 2017/1/15

    Y1 - 2017/1/15

    N2 - The dynamics of reactions of SiCl2 at Si(100) surfaces was investigated through the molecular orbital method at the B3LYP/6-31G(d,p) level of theory, with the surface being modeled using clusters of silicon atoms. The intradimer adsorption of a SiCl2 molecule proceeded with no energy barrier, and in the structure of the product of the adsorption reaction the Si atom of the SiCl2 adsorbate formed a triangular structure with the two Si atoms of the surface dimer, in agreement with theoretical predictions published recently in the literature for a small cluster. However, the dynamics reported in this work indicates that SiCl2 undergoes molecular adsorption at the silicon surface, in contrast with the dissociative adsorption suggested by some available kinetic models. Intradimer adsorption of a second SiCl2 molecule, and interdimer adsorptions of a first, a second, and a third SiCl2 molecule were also seen to proceed without significant energy barriers, suggesting that the formation of the first additional layer of silicon atoms on the surface would be fast if the adsorption of SiCl2 were the only type of reaction proceeding in the system. The diffusion of the SiCl2 adsorbate over the surface and its desorption from the surface were found to have comparable activation energies, so that these reactions are expected to compete at high temperatures.

    AB - The dynamics of reactions of SiCl2 at Si(100) surfaces was investigated through the molecular orbital method at the B3LYP/6-31G(d,p) level of theory, with the surface being modeled using clusters of silicon atoms. The intradimer adsorption of a SiCl2 molecule proceeded with no energy barrier, and in the structure of the product of the adsorption reaction the Si atom of the SiCl2 adsorbate formed a triangular structure with the two Si atoms of the surface dimer, in agreement with theoretical predictions published recently in the literature for a small cluster. However, the dynamics reported in this work indicates that SiCl2 undergoes molecular adsorption at the silicon surface, in contrast with the dissociative adsorption suggested by some available kinetic models. Intradimer adsorption of a second SiCl2 molecule, and interdimer adsorptions of a first, a second, and a third SiCl2 molecule were also seen to proceed without significant energy barriers, suggesting that the formation of the first additional layer of silicon atoms on the surface would be fast if the adsorption of SiCl2 were the only type of reaction proceeding in the system. The diffusion of the SiCl2 adsorbate over the surface and its desorption from the surface were found to have comparable activation energies, so that these reactions are expected to compete at high temperatures.

    KW - Cluster model

    KW - Molecular orbital method

    KW - Reaction dynamics

    KW - Silicon surface growth

    UR - http://www.scopus.com/inward/record.url?scp=84990945357&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=84990945357&partnerID=8YFLogxK

    U2 - 10.1016/j.apsusc.2016.09.039

    DO - 10.1016/j.apsusc.2016.09.039

    M3 - Article

    AN - SCOPUS:84990945357

    VL - 392

    SP - 410

    EP - 417

    JO - Applied Surface Science

    JF - Applied Surface Science

    SN - 0169-4332

    ER -