Analysis technique for systematic variation over whole shot and wafer at 45 nm process node

Jingo Nakanishi; Hiromi Notani; Yasunobu Nakase; Hirofumi Shinohara

doi:10.1109/ASICON.2009.5351353

Analysis technique for systematic variation over whole shot and wafer at 45 nm process node

Jingo Nakanishi^*, Hiromi Notani, Yasunobu Nakase, Hirofumi Shinohara

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We propose a test structure for systematic variation measurement over the whole shot and wafer area at a 45 nm process node. With this structure, we found that the systematic variation had two kinds of site dependence, one is a wafer scale and the other is a shot scale component. Additionally, the Die-to-Die and Within-Die variations for any chip size are calculated. Then, the systematic variation component has the correlation length more than 16mm. This shows that it is necessary to take into consideration the Within-Die variation according to the Die size.

Original language	English
Title of host publication	ASICON 2009 - Proceedings, 2009 8th IEEE International Conference on ASIC
Pages	585-588
Number of pages	4
DOIs	https://doi.org/10.1109/ASICON.2009.5351353
Publication status	Published - 2009 Dec 1
Externally published	Yes
Event	2009 8th IEEE International Conference on ASIC, ASICON 2009 - Changsha, China Duration: 2009 Oct 20 → 2009 Oct 23

Publication series

Name	ASICON 2009 - Proceedings 2009 8th IEEE International Conference on ASIC

Other

Other	2009 8th IEEE International Conference on ASIC, ASICON 2009
Country/Territory	China
City	Changsha
Period	09/10/20 → 09/10/23

Keywords

Analysis of within-wafer
Device variation
Test structure for systematic variation measurement
Within-die and die-to-die variation

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/ASICON.2009.5351353

Cite this

Nakanishi, J., Notani, H., Nakase, Y., & Shinohara, H. (2009). Analysis technique for systematic variation over whole shot and wafer at 45 nm process node. In ASICON 2009 - Proceedings, 2009 8th IEEE International Conference on ASIC (pp. 585-588). [5351353] (ASICON 2009 - Proceedings 2009 8th IEEE International Conference on ASIC). https://doi.org/10.1109/ASICON.2009.5351353

Analysis technique for systematic variation over whole shot and wafer at 45 nm process node. / Nakanishi, Jingo; Notani, Hiromi; Nakase, Yasunobu; Shinohara, Hirofumi.

ASICON 2009 - Proceedings, 2009 8th IEEE International Conference on ASIC. 2009. p. 585-588 5351353 (ASICON 2009 - Proceedings 2009 8th IEEE International Conference on ASIC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Nakanishi, J, Notani, H, Nakase, Y & Shinohara, H 2009, Analysis technique for systematic variation over whole shot and wafer at 45 nm process node. in ASICON 2009 - Proceedings, 2009 8th IEEE International Conference on ASIC., 5351353, ASICON 2009 - Proceedings 2009 8th IEEE International Conference on ASIC, pp. 585-588, 2009 8th IEEE International Conference on ASIC, ASICON 2009, Changsha, China, 09/10/20. https://doi.org/10.1109/ASICON.2009.5351353

@inproceedings{e860752288c548a5be7d5e072de08fc7,

title = "Analysis technique for systematic variation over whole shot and wafer at 45 nm process node",

abstract = "We propose a test structure for systematic variation measurement over the whole shot and wafer area at a 45 nm process node. With this structure, we found that the systematic variation had two kinds of site dependence, one is a wafer scale and the other is a shot scale component. Additionally, the Die-to-Die and Within-Die variations for any chip size are calculated. Then, the systematic variation component has the correlation length more than 16mm. This shows that it is necessary to take into consideration the Within-Die variation according to the Die size.",

keywords = "Analysis of within-wafer, Device variation, Test structure for systematic variation measurement, Within-die and die-to-die variation",

author = "Jingo Nakanishi and Hiromi Notani and Yasunobu Nakase and Hirofumi Shinohara",

year = "2009",

month = dec,

day = "1",

doi = "10.1109/ASICON.2009.5351353",

language = "English",

isbn = "9781424438686",

series = "ASICON 2009 - Proceedings 2009 8th IEEE International Conference on ASIC",

pages = "585--588",

booktitle = "ASICON 2009 - Proceedings, 2009 8th IEEE International Conference on ASIC",

note = "2009 8th IEEE International Conference on ASIC, ASICON 2009 ; Conference date: 20-10-2009 Through 23-10-2009",

}

TY - GEN

T1 - Analysis technique for systematic variation over whole shot and wafer at 45 nm process node

AU - Nakanishi, Jingo

AU - Notani, Hiromi

AU - Nakase, Yasunobu

AU - Shinohara, Hirofumi

PY - 2009/12/1

Y1 - 2009/12/1

N2 - We propose a test structure for systematic variation measurement over the whole shot and wafer area at a 45 nm process node. With this structure, we found that the systematic variation had two kinds of site dependence, one is a wafer scale and the other is a shot scale component. Additionally, the Die-to-Die and Within-Die variations for any chip size are calculated. Then, the systematic variation component has the correlation length more than 16mm. This shows that it is necessary to take into consideration the Within-Die variation according to the Die size.

AB - We propose a test structure for systematic variation measurement over the whole shot and wafer area at a 45 nm process node. With this structure, we found that the systematic variation had two kinds of site dependence, one is a wafer scale and the other is a shot scale component. Additionally, the Die-to-Die and Within-Die variations for any chip size are calculated. Then, the systematic variation component has the correlation length more than 16mm. This shows that it is necessary to take into consideration the Within-Die variation according to the Die size.

KW - Analysis of within-wafer

KW - Device variation

KW - Test structure for systematic variation measurement

KW - Within-die and die-to-die variation

UR - http://www.scopus.com/inward/record.url?scp=77949418987&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77949418987&partnerID=8YFLogxK

U2 - 10.1109/ASICON.2009.5351353

DO - 10.1109/ASICON.2009.5351353

M3 - Conference contribution

AN - SCOPUS:77949418987

SN - 9781424438686

T3 - ASICON 2009 - Proceedings 2009 8th IEEE International Conference on ASIC

SP - 585

EP - 588

BT - ASICON 2009 - Proceedings, 2009 8th IEEE International Conference on ASIC

T2 - 2009 8th IEEE International Conference on ASIC, ASICON 2009

Y2 - 20 October 2009 through 23 October 2009

ER -

Analysis technique for systematic variation over whole shot and wafer at 45 nm process node

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Keywords

ASJC Scopus subject areas

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