Abstract
We propose a test structure for systematic variation measurement over the whole shot and wafer area at a 45 nm process node. With this structure, we found that the systematic variation had two kinds of site dependence, one is a wafer scale and the other is a shot scale component. Additionally, the Die-to-Die and Within-Die variations for any chip size are calculated. Then, the systematic variation component has the correlation length more than 16mm. This shows that it is necessary to take into consideration the Within-Die variation according to the Die size.
| Original language | English |
|---|---|
| Title of host publication | ASICON 2009 - Proceedings 2009 8th IEEE International Conference on ASIC |
| Pages | 585-588 |
| Number of pages | 4 |
| DOIs | |
| Publication status | Published - 2009 |
| Externally published | Yes |
| Event | 2009 8th IEEE International Conference on ASIC, ASICON 2009 - Changsha, China Duration: 2009 Oct 20 → 2009 Oct 23 |
Other
| Other | 2009 8th IEEE International Conference on ASIC, ASICON 2009 |
|---|---|
| Country | China |
| City | Changsha |
| Period | 09/10/20 → 09/10/23 |
Keywords
- Analysis of within-wafer
- Device variation
- Test structure for systematic variation measurement
- Within-die and die-to-die variation
ASJC Scopus subject areas
- Hardware and Architecture
- Electrical and Electronic Engineering
Cite this
Analysis technique for systematic variation over whole shot and wafer at 45 nm process node. / Nakanishi, Jingo; Notani, Hiromi; Nakase, Yasunobu; Shinohara, Hirofumi.
ASICON 2009 - Proceedings 2009 8th IEEE International Conference on ASIC. 2009. p. 585-588 5351353.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Analysis technique for systematic variation over whole shot and wafer at 45 nm process node
AU - Nakanishi, Jingo
AU - Notani, Hiromi
AU - Nakase, Yasunobu
AU - Shinohara, Hirofumi
PY - 2009
Y1 - 2009
N2 - We propose a test structure for systematic variation measurement over the whole shot and wafer area at a 45 nm process node. With this structure, we found that the systematic variation had two kinds of site dependence, one is a wafer scale and the other is a shot scale component. Additionally, the Die-to-Die and Within-Die variations for any chip size are calculated. Then, the systematic variation component has the correlation length more than 16mm. This shows that it is necessary to take into consideration the Within-Die variation according to the Die size.
AB - We propose a test structure for systematic variation measurement over the whole shot and wafer area at a 45 nm process node. With this structure, we found that the systematic variation had two kinds of site dependence, one is a wafer scale and the other is a shot scale component. Additionally, the Die-to-Die and Within-Die variations for any chip size are calculated. Then, the systematic variation component has the correlation length more than 16mm. This shows that it is necessary to take into consideration the Within-Die variation according to the Die size.
KW - Analysis of within-wafer
KW - Device variation
KW - Test structure for systematic variation measurement
KW - Within-die and die-to-die variation
UR - http://www.scopus.com/inward/record.url?scp=77949418987&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77949418987&partnerID=8YFLogxK
U2 - 10.1109/ASICON.2009.5351353
DO - 10.1109/ASICON.2009.5351353
M3 - Conference contribution
AN - SCOPUS:77949418987
SN - 9781424438686
SP - 585
EP - 588
BT - ASICON 2009 - Proceedings 2009 8th IEEE International Conference on ASIC
ER -