Analytical studies on multiple delta doping in diamond thin films for efficient hole excitation and conductivity enhancement

Takeshi Kobayashi, Takuya Ariki, Mamoru Iwabuchi, Tetsuro Maki, Shozo Shikama, Sei Suzuki

Research output: Contribution to journalArticle

36 Citations (Scopus)

Abstract

Beneficial features of boron multiple delta doping (MDD) in synthetic diamond thin films are studied analytically and compared with MDD in GaAs. In spite of a deep boron level (∼0.3 eV), MDD greatly helps the thermal excitation of holes via elevation of the Fermi level toward the acceptor boron level. Thus, a hole excitation 6-7 times higher than that of the uniformly doped one is obtained. Furthermore, more than 90% of holes are in the spacer layer (i-diamond) where the mobility is high, resulting in a film conductance of the MDD structure more than 20 times higher than that of the conventional one when the same amount of boron is uniformly doped.

Original languageEnglish
Pages (from-to)1977-1979
Number of pages3
JournalJournal of Applied Physics
Volume76
Issue number3
DOIs
Publication statusPublished - 1994 Dec 1
Externally publishedYes

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boron
diamonds
conductivity
augmentation
thin films
excitation
spacers

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Analytical studies on multiple delta doping in diamond thin films for efficient hole excitation and conductivity enhancement. / Kobayashi, Takeshi; Ariki, Takuya; Iwabuchi, Mamoru; Maki, Tetsuro; Shikama, Shozo; Suzuki, Sei.

In: Journal of Applied Physics, Vol. 76, No. 3, 01.12.1994, p. 1977-1979.

Research output: Contribution to journalArticle

Kobayashi, Takeshi ; Ariki, Takuya ; Iwabuchi, Mamoru ; Maki, Tetsuro ; Shikama, Shozo ; Suzuki, Sei. / Analytical studies on multiple delta doping in diamond thin films for efficient hole excitation and conductivity enhancement. In: Journal of Applied Physics. 1994 ; Vol. 76, No. 3. pp. 1977-1979.
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