Anatase-type TiO2 thin films produced by lattice deformation

Wataru Sugimura, Atsushi Yamazaki, Hisashi Shigetani, Junzo Tanaka, Takefumi Mitsuhashi

Research output: Contribution to journalArticle

43 Citations (Scopus)

Abstract

TiO2 thin films were grown onto SrTiO3 substrates by a molecular beam epitaxy (MBE) method using an oxygen radical source. The structure of the thin films obtained was evaluated by X-ray reflection diffractometer (XRD) and reflection high energy electron diffraction (RHEED); TiO2 thin films were determined to be of anatase type and were epitaxially grown in the direction of the c-axis, parallel to the [001] of the substrates. Near the interface, the a-value of thin films increased and the c-value shrank in comparison to that of anatase powder. These results indicated that the anatase phase of TiO2 was induced by a lattice matching process at the interface between SrTiO3 and TiO2.

Original languageEnglish
Pages (from-to)7358-7359
Number of pages2
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume36
Issue number12 A
Publication statusPublished - 1997 Dec 1

Keywords

  • Anatase
  • Lattice mismatch
  • Molecular beam epitaxy
  • Thin film
  • TiO

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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