Anatase-type TiO2 thin films produced by lattice deformation

Wataru Sugimura; Atsushi Yamazaki; Hisashi Shigetani; Junzo Tanaka; Takefumi Mitsuhashi

Anatase-type TiO₂ thin films produced by lattice deformation

Wataru Sugimura^*, Atsushi Yamazaki, Hisashi Shigetani, Junzo Tanaka, Takefumi Mitsuhashi

^*Corresponding author for this work

School of Creative Science and Engineering

Research output: Contribution to journal › Article › peer-review

44 Citations (Scopus)

Abstract

TiO₂ thin films were grown onto SrTiO₃ substrates by a molecular beam epitaxy (MBE) method using an oxygen radical source. The structure of the thin films obtained was evaluated by X-ray reflection diffractometer (XRD) and reflection high energy electron diffraction (RHEED); TiO₂ thin films were determined to be of anatase type and were epitaxially grown in the direction of the c-axis, parallel to the [001] of the substrates. Near the interface, the a-value of thin films increased and the c-value shrank in comparison to that of anatase powder. These results indicated that the anatase phase of TiO₂ was induced by a lattice matching process at the interface between SrTiO₃ and TiO₂.

Original language	English
Pages (from-to)	7358-7359
Number of pages	2
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	36
Issue number	12 A
Publication status	Published - 1997 Dec 1

Keywords

Anatase
Lattice mismatch
Molecular beam epitaxy
Thin film
TiO

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Cite this

@article{b86651c676e7470ca4d2315698cafc62,

title = "Anatase-type TiO2 thin films produced by lattice deformation",

abstract = "TiO2 thin films were grown onto SrTiO3 substrates by a molecular beam epitaxy (MBE) method using an oxygen radical source. The structure of the thin films obtained was evaluated by X-ray reflection diffractometer (XRD) and reflection high energy electron diffraction (RHEED); TiO2 thin films were determined to be of anatase type and were epitaxially grown in the direction of the c-axis, parallel to the [001] of the substrates. Near the interface, the a-value of thin films increased and the c-value shrank in comparison to that of anatase powder. These results indicated that the anatase phase of TiO2 was induced by a lattice matching process at the interface between SrTiO3 and TiO2.",

keywords = "Anatase, Lattice mismatch, Molecular beam epitaxy, Thin film, TiO",

author = "Wataru Sugimura and Atsushi Yamazaki and Hisashi Shigetani and Junzo Tanaka and Takefumi Mitsuhashi",

year = "1997",

month = dec,

day = "1",

language = "English",

volume = "36",

pages = "7358--7359",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "12 A",

}

TY - JOUR

T1 - Anatase-type TiO2 thin films produced by lattice deformation

AU - Sugimura, Wataru

AU - Yamazaki, Atsushi

AU - Shigetani, Hisashi

AU - Tanaka, Junzo

AU - Mitsuhashi, Takefumi

PY - 1997/12/1

Y1 - 1997/12/1

N2 - TiO2 thin films were grown onto SrTiO3 substrates by a molecular beam epitaxy (MBE) method using an oxygen radical source. The structure of the thin films obtained was evaluated by X-ray reflection diffractometer (XRD) and reflection high energy electron diffraction (RHEED); TiO2 thin films were determined to be of anatase type and were epitaxially grown in the direction of the c-axis, parallel to the [001] of the substrates. Near the interface, the a-value of thin films increased and the c-value shrank in comparison to that of anatase powder. These results indicated that the anatase phase of TiO2 was induced by a lattice matching process at the interface between SrTiO3 and TiO2.

AB - TiO2 thin films were grown onto SrTiO3 substrates by a molecular beam epitaxy (MBE) method using an oxygen radical source. The structure of the thin films obtained was evaluated by X-ray reflection diffractometer (XRD) and reflection high energy electron diffraction (RHEED); TiO2 thin films were determined to be of anatase type and were epitaxially grown in the direction of the c-axis, parallel to the [001] of the substrates. Near the interface, the a-value of thin films increased and the c-value shrank in comparison to that of anatase powder. These results indicated that the anatase phase of TiO2 was induced by a lattice matching process at the interface between SrTiO3 and TiO2.

KW - Anatase

KW - Lattice mismatch

KW - Molecular beam epitaxy

KW - Thin film

KW - TiO

UR - http://www.scopus.com/inward/record.url?scp=0031340063&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031340063&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0031340063

VL - 36

SP - 7358

EP - 7359

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 12 A

ER -

Anatase-type TiO₂ thin films produced by lattice deformation

Abstract

Keywords

ASJC Scopus subject areas

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