Abstract
TiO2 thin films were grown onto SrTiO3 substrates by a molecular beam epitaxy (MBE) method using an oxygen radical source. The structure of the thin films obtained was evaluated by X-ray reflection diffractometer (XRD) and reflection high energy electron diffraction (RHEED); TiO2 thin films were determined to be of anatase type and were epitaxially grown in the direction of the c-axis, parallel to the [001] of the substrates. Near the interface, the a-value of thin films increased and the c-value shrank in comparison to that of anatase powder. These results indicated that the anatase phase of TiO2 was induced by a lattice matching process at the interface between SrTiO3 and TiO2.
| Original language | English |
|---|---|
| Pages (from-to) | 7358-7359 |
| Number of pages | 2 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 36 |
| Issue number | 12 A |
| Publication status | Published - 1997 Dec |
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Keywords
- Anatase
- Lattice mismatch
- Molecular beam epitaxy
- Thin film
- TiO
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
- Engineering(all)
Cite this
Anatase-type TiO2 thin films produced by lattice deformation. / Sugimura, Wataru; Yamazaki, Atsushi; Shigetani, Hisashi; Tanaka, Junzo; Mitsuhashi, Takefumi.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 36, No. 12 A, 12.1997, p. 7358-7359.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Anatase-type TiO2 thin films produced by lattice deformation
AU - Sugimura, Wataru
AU - Yamazaki, Atsushi
AU - Shigetani, Hisashi
AU - Tanaka, Junzo
AU - Mitsuhashi, Takefumi
PY - 1997/12
Y1 - 1997/12
N2 - TiO2 thin films were grown onto SrTiO3 substrates by a molecular beam epitaxy (MBE) method using an oxygen radical source. The structure of the thin films obtained was evaluated by X-ray reflection diffractometer (XRD) and reflection high energy electron diffraction (RHEED); TiO2 thin films were determined to be of anatase type and were epitaxially grown in the direction of the c-axis, parallel to the [001] of the substrates. Near the interface, the a-value of thin films increased and the c-value shrank in comparison to that of anatase powder. These results indicated that the anatase phase of TiO2 was induced by a lattice matching process at the interface between SrTiO3 and TiO2.
AB - TiO2 thin films were grown onto SrTiO3 substrates by a molecular beam epitaxy (MBE) method using an oxygen radical source. The structure of the thin films obtained was evaluated by X-ray reflection diffractometer (XRD) and reflection high energy electron diffraction (RHEED); TiO2 thin films were determined to be of anatase type and were epitaxially grown in the direction of the c-axis, parallel to the [001] of the substrates. Near the interface, the a-value of thin films increased and the c-value shrank in comparison to that of anatase powder. These results indicated that the anatase phase of TiO2 was induced by a lattice matching process at the interface between SrTiO3 and TiO2.
KW - Anatase
KW - Lattice mismatch
KW - Molecular beam epitaxy
KW - Thin film
KW - TiO
UR - http://www.scopus.com/inward/record.url?scp=0031340063&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0031340063&partnerID=8YFLogxK
M3 - Article
VL - 36
SP - 7358
EP - 7359
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 12 A
ER -