Anatase-type TiO2 thin films produced by lattice deformation

Wataru Sugimura, Atsushi Yamazaki, Hisashi Shigetani, Junzo Tanaka, Takefumi Mitsuhashi

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    TiO2 thin films were grown onto SrTiO3 substrates by a molecular beam epitaxy (MBE) method using an oxygen radical source. The structure of the thin films obtained was evaluated by X-ray reflection diffractometer (XRD) and reflection high energy electron diffraction (RHEED); TiO2 thin films were determined to be of anatase type and were epitaxially grown in the direction of the c-axis, parallel to the [001] of the substrates. Near the interface, the a-value of thin films increased and the c-value shrank in comparison to that of anatase powder. These results indicated that the anatase phase of TiO2 was induced by a lattice matching process at the interface between SrTiO3 and TiO2.

    Original languageEnglish
    Pages (from-to)7358-7359
    Number of pages2
    JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    Issue number12 A
    Publication statusPublished - 1997 Dec



    • Anatase
    • Lattice mismatch
    • Molecular beam epitaxy
    • Thin film
    • TiO

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)
    • Engineering(all)

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