Angle-resolved photoemission study of Ga1-xMnxAs

J. Okabayashi, A. Kimura, O. Rader, T. Mizokawa, A. Fujimori, T. Hayashi, M. Tanaka

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124 Citations (Scopus)


Valence-band dispersions in Ga1-xMnxAs along the Γ-Δ-X line (k∥[001]) are obtained by angle-resolved photoemission spectroscopy. Compared with the spectra of GaAs, a small energy shift caused by Mn doping is observed for one of the valence bands. In addition, states are observed near the Fermi level in Ga1-xMnxAs. These states show no clear dispersions and behave like an impurity band induced by Mn doping.

Original languageEnglish
Article number125304
Pages (from-to)1253041-1253044
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number12
Publication statusPublished - 2001 Sep 15
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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    Okabayashi, J., Kimura, A., Rader, O., Mizokawa, T., Fujimori, A., Hayashi, T., & Tanaka, M. (2001). Angle-resolved photoemission study of Ga1-xMnxAs. Physical Review B - Condensed Matter and Materials Physics, 64(12), 1253041-1253044. [125304].