Angle-resolved photoemission study of Ga1-xMnxAs

J. Okabayashi; A. Kimura; O. Rader; T. Mizokawa; A. Fujimori; T. Hayashi; M. Tanaka

Angle-resolved photoemission study of Ga_1-xMn_xAs

J. Okabayashi^*, A. Kimura, O. Rader, T. Mizokawa, A. Fujimori, T. Hayashi, M. Tanaka

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

129 Citations (Scopus)

Abstract

Valence-band dispersions in Ga_1-xMn_xAs along the Γ-Δ-X line (k∥[001]) are obtained by angle-resolved photoemission spectroscopy. Compared with the spectra of GaAs, a small energy shift caused by Mn doping is observed for one of the valence bands. In addition, states are observed near the Fermi level in Ga_1-xMn_xAs. These states show no clear dispersions and behave like an impurity band induced by Mn doping.

Original language	English
Article number	125304
Pages (from-to)	1253041-1253044
Number of pages	4
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	64
Issue number	12
Publication status	Published - 2001 Sept 15
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Cite this

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title = "Angle-resolved photoemission study of Ga1-xMnxAs",

abstract = "Valence-band dispersions in Ga1-xMnxAs along the Γ-Δ-X line (k∥[001]) are obtained by angle-resolved photoemission spectroscopy. Compared with the spectra of GaAs, a small energy shift caused by Mn doping is observed for one of the valence bands. In addition, states are observed near the Fermi level in Ga1-xMnxAs. These states show no clear dispersions and behave like an impurity band induced by Mn doping.",

author = "J. Okabayashi and A. Kimura and O. Rader and T. Mizokawa and A. Fujimori and T. Hayashi and M. Tanaka",

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T1 - Angle-resolved photoemission study of Ga1-xMnxAs

AU - Okabayashi, J.

AU - Kimura, A.

AU - Rader, O.

AU - Mizokawa, T.

AU - Fujimori, A.

AU - Hayashi, T.

AU - Tanaka, M.

PY - 2001/9/15

Y1 - 2001/9/15

N2 - Valence-band dispersions in Ga1-xMnxAs along the Γ-Δ-X line (k∥[001]) are obtained by angle-resolved photoemission spectroscopy. Compared with the spectra of GaAs, a small energy shift caused by Mn doping is observed for one of the valence bands. In addition, states are observed near the Fermi level in Ga1-xMnxAs. These states show no clear dispersions and behave like an impurity band induced by Mn doping.

AB - Valence-band dispersions in Ga1-xMnxAs along the Γ-Δ-X line (k∥[001]) are obtained by angle-resolved photoemission spectroscopy. Compared with the spectra of GaAs, a small energy shift caused by Mn doping is observed for one of the valence bands. In addition, states are observed near the Fermi level in Ga1-xMnxAs. These states show no clear dispersions and behave like an impurity band induced by Mn doping.

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M3 - Article

AN - SCOPUS:0035883403

SN - 0163-1829

VL - 64

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JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

IS - 12

M1 - 125304

ER -

Angle-resolved photoemission study of Ga_1-xMn_xAs

Abstract

ASJC Scopus subject areas

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