Angular distribution of Si atoms sputtered by keV Ar+ ions

T. Okutani, M. Shikata, Shingo Ichimura, R. Shimizu

Research output: Contribution to journalArticle

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Abstract

Angular distributions of sputtered Si atoms from polycrystalline Si targets were measured for Ar+ ions of 3 and 10 keV, at angles of incidence of 0°(normal incidence) and 60°. The results were compared with the theoretical ones obtained from Monte Carlo calculations by Kang et al. Theory describes qualitatively the experimental results fairly well. Some discrepancy between the theoretical and experimental results was, however, found in the preferred ejection angles. The preferred ejection angle of the experimental results for 10 keV at angle of incidence of 60°agrees very well with that suggested by the universal curve of the correlation between the preferred ejection angle and sputtering yield, which has been proposed by Betz et al.

Original languageEnglish
Pages (from-to)2884-2887
Number of pages4
JournalJournal of Applied Physics
Volume51
Issue number5
DOIs
Publication statusPublished - 1980 Dec 1
Externally publishedYes

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  • Physics and Astronomy(all)

Cite this

Angular distribution of Si atoms sputtered by keV Ar+ ions. / Okutani, T.; Shikata, M.; Ichimura, Shingo; Shimizu, R.

In: Journal of Applied Physics, Vol. 51, No. 5, 01.12.1980, p. 2884-2887.

Research output: Contribution to journalArticle

Okutani, T. ; Shikata, M. ; Ichimura, Shingo ; Shimizu, R. / Angular distribution of Si atoms sputtered by keV Ar+ ions. In: Journal of Applied Physics. 1980 ; Vol. 51, No. 5. pp. 2884-2887.
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