Anisotropic oxygen reactive ion etching for removing residual layers from 45 nm-width imprint patterns

Takuya Uehara, Shoichi Kubo, Nobuya Hiroshiba, Masaru Nakagawa

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We designed and set up an apparatus of oxygen reactive ion etching (O2 RIE) with parallel electrode configuration to remove a residual layer located on concave parts of ultraviolet nanoimprinted resist patterns and to maintain the pattern linewidth after dry etching. Imprint resist patterns with 45 nm line-and-space on a silicon wafer were fabricated with a bisphenol A-based UV-curable resin (NL-KK1) and a fluorinated replica mold under an easily condensable gas atmosphere. Cross-sectional field-emission scanning electron microscope observations revealed that the etching parameters of O2 mass flow rate, O2 pressure, and radio frequency (RF) bias power changed the resist pattern shapes. Steep resist patterns of the hardly changed linewidth could be left without the residual layer on the silicon substrates by tuning the parameters which caused anisotropic O2 RIE. The imprint resist mask was applied for a subsequent dry etching of underneath silicon without any metal hard mask layers, and 45 nm line-and-space silicon pa tterns could be obtained.

Original languageEnglish
Pages (from-to)201-208
Number of pages8
JournalJournal of Photopolymer Science and Technology
Volume29
Issue number2
DOIs
Publication statusPublished - 2016 Jan 1
Externally publishedYes

Fingerprint

Reactive ion etching
Silicon
Dry etching
Oxygen
Linewidth
Masks
Silicon wafers
Field emission
Etching
Electron microscopes
Resins
Tuning
Gases
Flow rate
Scanning
Electrodes
Substrates
Metals

Keywords

  • Oxygen reacti ve ion etching
  • Residual layer
  • UV nan oimprinting

ASJC Scopus subject areas

  • Polymers and Plastics
  • Organic Chemistry
  • Materials Chemistry

Cite this

Anisotropic oxygen reactive ion etching for removing residual layers from 45 nm-width imprint patterns. / Uehara, Takuya; Kubo, Shoichi; Hiroshiba, Nobuya; Nakagawa, Masaru.

In: Journal of Photopolymer Science and Technology, Vol. 29, No. 2, 01.01.2016, p. 201-208.

Research output: Contribution to journalArticle

Uehara, Takuya ; Kubo, Shoichi ; Hiroshiba, Nobuya ; Nakagawa, Masaru. / Anisotropic oxygen reactive ion etching for removing residual layers from 45 nm-width imprint patterns. In: Journal of Photopolymer Science and Technology. 2016 ; Vol. 29, No. 2. pp. 201-208.
@article{5b53f13a65184ebba9ace205da9910c0,
title = "Anisotropic oxygen reactive ion etching for removing residual layers from 45 nm-width imprint patterns",
abstract = "We designed and set up an apparatus of oxygen reactive ion etching (O2 RIE) with parallel electrode configuration to remove a residual layer located on concave parts of ultraviolet nanoimprinted resist patterns and to maintain the pattern linewidth after dry etching. Imprint resist patterns with 45 nm line-and-space on a silicon wafer were fabricated with a bisphenol A-based UV-curable resin (NL-KK1) and a fluorinated replica mold under an easily condensable gas atmosphere. Cross-sectional field-emission scanning electron microscope observations revealed that the etching parameters of O2 mass flow rate, O2 pressure, and radio frequency (RF) bias power changed the resist pattern shapes. Steep resist patterns of the hardly changed linewidth could be left without the residual layer on the silicon substrates by tuning the parameters which caused anisotropic O2 RIE. The imprint resist mask was applied for a subsequent dry etching of underneath silicon without any metal hard mask layers, and 45 nm line-and-space silicon pa tterns could be obtained.",
keywords = "Oxygen reacti ve ion etching, Residual layer, UV nan oimprinting",
author = "Takuya Uehara and Shoichi Kubo and Nobuya Hiroshiba and Masaru Nakagawa",
year = "2016",
month = "1",
day = "1",
doi = "10.2494/photopolymer.29.201",
language = "English",
volume = "29",
pages = "201--208",
journal = "Journal of Photopolymer Science and Technology",
issn = "0914-9244",
publisher = "Tokai University",
number = "2",

}

TY - JOUR

T1 - Anisotropic oxygen reactive ion etching for removing residual layers from 45 nm-width imprint patterns

AU - Uehara, Takuya

AU - Kubo, Shoichi

AU - Hiroshiba, Nobuya

AU - Nakagawa, Masaru

PY - 2016/1/1

Y1 - 2016/1/1

N2 - We designed and set up an apparatus of oxygen reactive ion etching (O2 RIE) with parallel electrode configuration to remove a residual layer located on concave parts of ultraviolet nanoimprinted resist patterns and to maintain the pattern linewidth after dry etching. Imprint resist patterns with 45 nm line-and-space on a silicon wafer were fabricated with a bisphenol A-based UV-curable resin (NL-KK1) and a fluorinated replica mold under an easily condensable gas atmosphere. Cross-sectional field-emission scanning electron microscope observations revealed that the etching parameters of O2 mass flow rate, O2 pressure, and radio frequency (RF) bias power changed the resist pattern shapes. Steep resist patterns of the hardly changed linewidth could be left without the residual layer on the silicon substrates by tuning the parameters which caused anisotropic O2 RIE. The imprint resist mask was applied for a subsequent dry etching of underneath silicon without any metal hard mask layers, and 45 nm line-and-space silicon pa tterns could be obtained.

AB - We designed and set up an apparatus of oxygen reactive ion etching (O2 RIE) with parallel electrode configuration to remove a residual layer located on concave parts of ultraviolet nanoimprinted resist patterns and to maintain the pattern linewidth after dry etching. Imprint resist patterns with 45 nm line-and-space on a silicon wafer were fabricated with a bisphenol A-based UV-curable resin (NL-KK1) and a fluorinated replica mold under an easily condensable gas atmosphere. Cross-sectional field-emission scanning electron microscope observations revealed that the etching parameters of O2 mass flow rate, O2 pressure, and radio frequency (RF) bias power changed the resist pattern shapes. Steep resist patterns of the hardly changed linewidth could be left without the residual layer on the silicon substrates by tuning the parameters which caused anisotropic O2 RIE. The imprint resist mask was applied for a subsequent dry etching of underneath silicon without any metal hard mask layers, and 45 nm line-and-space silicon pa tterns could be obtained.

KW - Oxygen reacti ve ion etching

KW - Residual layer

KW - UV nan oimprinting

UR - http://www.scopus.com/inward/record.url?scp=84981156237&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84981156237&partnerID=8YFLogxK

U2 - 10.2494/photopolymer.29.201

DO - 10.2494/photopolymer.29.201

M3 - Article

AN - SCOPUS:84981156237

VL - 29

SP - 201

EP - 208

JO - Journal of Photopolymer Science and Technology

JF - Journal of Photopolymer Science and Technology

SN - 0914-9244

IS - 2

ER -