Anisotropic resistivities of precisely oxygen controlled single-crystal Bi2Sr2CaCu2O8+δ: Systematic study on "spin gap" effect

T. Watanabe, T. Fujii, Azusa Matsuda

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Abstract

The in-plane resistivity ρa(T) and the out-of-plane resistivity ρc(T) have been systematically measured for Bi2Sr2CaCu2O8+δ single crystals with their oxygen contents precisely controlled. In the underdoped region, deviation from T-linear in-plane resistivity, which evidences the opening of the "spin gap," is clearly observed, while the out-of-plane resistivity is well reproduced by the activation-type phenomenological formula ρc(T) = (a/T)exp(Δ/T) + c. In contrast to the YBa2Cu3Cu3O7-δ system, we find that the onset of the semiconducting ρc(T) does not coincide with the opening of the spin gap seen in the ρa(T) in this Bi2Sr2CaCu2O8+δ system.

Original languageEnglish
Pages (from-to)2113-2116
Number of pages4
JournalPhysical Review Letters
Volume79
Issue number11
Publication statusPublished - 1997
Externally publishedYes

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electrical resistivity
single crystals
oxygen
activation
deviation

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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Anisotropic resistivities of precisely oxygen controlled single-crystal Bi2Sr2CaCu2O8+δ : Systematic study on "spin gap" effect. / Watanabe, T.; Fujii, T.; Matsuda, Azusa.

In: Physical Review Letters, Vol. 79, No. 11, 1997, p. 2113-2116.

Research output: Contribution to journalArticle

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