Anisotropic surface morphology of GaAs (001) surfaces passivated with nitrogen radicals

M. Kasu, T. Makimoto, N. Kobayashi

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We have studied GaAs (001) surfaces passivated with nitrogen (N) radicals at submonolayer N coverage mainly using scanning tunneling microscopy and transmission electron microscopy. We determined that GaN-rich regions are elongated in the [1̄10] direction, suggesting that N passivation proceeds in the [1̄10] direction. This can be explained in terms of minimization of the tensile strains in the [110] direction induced when the supplied N atoms replace first-layer As atoms on the (2×4) surface.

Original languageEnglish
Pages (from-to)955-957
Number of pages3
JournalApplied Physics Letters
Issue number7
Publication statusPublished - 1996 Dec 1


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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