Anisotropic surface morphology of GaAs (001) surfaces passivated with nitrogen radicals

M. Kasu; T. Makimoto; N. Kobayashi

doi:10.1063/1.116110

Anisotropic surface morphology of GaAs (001) surfaces passivated with nitrogen radicals

M. Kasu^*, T. Makimoto, N. Kobayashi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

We have studied GaAs (001) surfaces passivated with nitrogen (N) radicals at submonolayer N coverage mainly using scanning tunneling microscopy and transmission electron microscopy. We determined that GaN-rich regions are elongated in the [1̄10] direction, suggesting that N passivation proceeds in the [1̄10] direction. This can be explained in terms of minimization of the tensile strains in the [110] direction induced when the supplied N atoms replace first-layer As atoms on the (2×4) surface.

Original language	English
Pages (from-to)	955-957
Number of pages	3
Journal	Applied Physics Letters
Volume	68
Issue number	7
DOIs	https://doi.org/10.1063/1.116110
Publication status	Published - 1996
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Anisotropic surface morphology of GaAs (001) surfaces passivated with nitrogen radicals",

abstract = "We have studied GaAs (001) surfaces passivated with nitrogen (N) radicals at submonolayer N coverage mainly using scanning tunneling microscopy and transmission electron microscopy. We determined that GaN-rich regions are elongated in the [{\=1}10] direction, suggesting that N passivation proceeds in the [{\=1}10] direction. This can be explained in terms of minimization of the tensile strains in the [110] direction induced when the supplied N atoms replace first-layer As atoms on the (2×4) surface.",

author = "M. Kasu and T. Makimoto and N. Kobayashi",

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AU - Kasu, M.

AU - Makimoto, T.

AU - Kobayashi, N.

PY - 1996

Y1 - 1996

N2 - We have studied GaAs (001) surfaces passivated with nitrogen (N) radicals at submonolayer N coverage mainly using scanning tunneling microscopy and transmission electron microscopy. We determined that GaN-rich regions are elongated in the [1̄10] direction, suggesting that N passivation proceeds in the [1̄10] direction. This can be explained in terms of minimization of the tensile strains in the [110] direction induced when the supplied N atoms replace first-layer As atoms on the (2×4) surface.

AB - We have studied GaAs (001) surfaces passivated with nitrogen (N) radicals at submonolayer N coverage mainly using scanning tunneling microscopy and transmission electron microscopy. We determined that GaN-rich regions are elongated in the [1̄10] direction, suggesting that N passivation proceeds in the [1̄10] direction. This can be explained in terms of minimization of the tensile strains in the [110] direction induced when the supplied N atoms replace first-layer As atoms on the (2×4) surface.

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Anisotropic surface morphology of GaAs (001) surfaces passivated with nitrogen radicals

Abstract

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