Anisotropic surface morphology of GaAs (001) surfaces passivated with nitrogen radicals

M. Kasu, Toshiki Makimoto, N. Kobayashi

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

We have studied GaAs (001) surfaces passivated with nitrogen (N) radicals at submonolayer N coverage mainly using scanning tunneling microscopy and transmission electron microscopy. We determined that GaN-rich regions are elongated in the [1̄10] direction, suggesting that N passivation proceeds in the [1̄10] direction. This can be explained in terms of minimization of the tensile strains in the [110] direction induced when the supplied N atoms replace first-layer As atoms on the (2×4) surface.

Original languageEnglish
Pages (from-to)955
Number of pages1
JournalApplied Physics Letters
DOIs
Publication statusPublished - 1995
Externally publishedYes

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nitrogen
passivity
atoms
scanning tunneling microscopy
transmission electron microscopy
optimization

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Anisotropic surface morphology of GaAs (001) surfaces passivated with nitrogen radicals. / Kasu, M.; Makimoto, Toshiki; Kobayashi, N.

In: Applied Physics Letters, 1995, p. 955.

Research output: Contribution to journalArticle

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