Annealing behavior of irradiation-induced damage in an AlGaAs/GaAs heterostructure by low-energy electron beam

Toshimi Wada, Toshihiko Kanayama, Shingo Ichimura, Yoshinobu Sugiyama, Masanori Komuro

Research output: Contribution to journalArticle

Abstract

Evaluating the low-temperature mobility of the two-dimensional electron gas in AlGaAs/GaAs heterostructures, we have studied the nature of the damage induced in the heterostructure by low-energy electron-beam irradiation up to 7.5 keV at room temperature and at 90 K. The isochronal annealing revealed that at around 450 K the degraded mobility recovered quickly in the 90-K-irradiated sample and gradually in the sample irradiated at room temperature. However, the quality of both samples did not recover completely upon annealing at 675 K. The electron-beam irradiation was speculated to cause the formation of As-related defects.

Original languageEnglish
Pages (from-to)722-721
Number of pages2
JournalJapanese Journal of Applied Physics
Volume33
Issue number12S
DOIs
Publication statusPublished - 1994 Jan 1
Externally publishedYes

Fingerprint

aluminum gallium arsenides
Heterojunctions
Electron beams
Irradiation
electron beams
Annealing
damage
irradiation
annealing
Two dimensional electron gas
room temperature
Temperature
electron gas
energy
Defects
causes
defects

Keywords

  • 2DEG
  • AIGaAs/GaAs
  • As vacancy
  • Electron-beam lithography
  • Interstitial As
  • Irradiation-induced damage
  • Mobility

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Annealing behavior of irradiation-induced damage in an AlGaAs/GaAs heterostructure by low-energy electron beam. / Wada, Toshimi; Kanayama, Toshihiko; Ichimura, Shingo; Sugiyama, Yoshinobu; Komuro, Masanori.

In: Japanese Journal of Applied Physics, Vol. 33, No. 12S, 01.01.1994, p. 722-721.

Research output: Contribution to journalArticle

Wada, Toshimi ; Kanayama, Toshihiko ; Ichimura, Shingo ; Sugiyama, Yoshinobu ; Komuro, Masanori. / Annealing behavior of irradiation-induced damage in an AlGaAs/GaAs heterostructure by low-energy electron beam. In: Japanese Journal of Applied Physics. 1994 ; Vol. 33, No. 12S. pp. 722-721.
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