Annealing behavior of irradiation-induced damage in an AlGaAs/GaAs heterostructure by low-energy electron beam

Toshimi Wada, Toshihiko Kanayama, Shingo Ichimura, Yoshinobu Sugiyama, Masanori Komuro

Research output: Contribution to journalArticle

Abstract

Evaluating the low-temperature mobility of the two-dimensional electron gas in AlGaAs/GaAs heterostructures, we have studied the nature of the damage induced in the heterostructure by low-energy electron-beam irradiation up to 7.5 keV at room temperature and at 90 K. The isochronal annealing revealed that at around 450 K the degraded mobility recovered quickly in the 90-K-irradiated sample and gradually in the sample irradiated at room temperature. However, the quality of both samples did not recover completely upon annealing at 675 K. The electron-beam irradiation was speculated to cause the formation of As-related defects.

Original languageEnglish
Pages (from-to)722-721
Number of pages2
JournalJapanese Journal of Applied Physics
Volume33
Issue number12S
DOIs
Publication statusPublished - 1994 Jan 1
Externally publishedYes

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Keywords

  • 2DEG
  • AIGaAs/GaAs
  • As vacancy
  • Electron-beam lithography
  • Interstitial As
  • Irradiation-induced damage
  • Mobility

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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