The ESR of amorphous silicon films evaporated in UHV has been measured at room temperature. Up to 900°C the annealing behavior of the spin density in the amorphous silicon films is quite different from that of films deposited in conventional HV.
|Number of pages||3|
|Journal||"Physics Letters, Section A: General, Atomic and Solid State Physics"|
|Publication status||Published - 1980|
ASJC Scopus subject areas
- Physics and Astronomy(all)