Annealing effects on Ta doped SnO2 films

Junjun Jia; Yu Muto; Nobuto Oka; Yuzo Shigesato

doi:10.1557/opl.2012.1236

Annealing effects on Ta doped SnO₂ films

Junjun Jia^*, Yu Muto, Nobuto Oka, Yuzo Shigesato

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Ta doped SnO₂ (TTO) films prepared on quartz glass substrates at 200°C were annealed in the air to investigate the annealing effect on the structural, the optical, and the electrical properties. It is shown that the annealing for TTO films resulted in beneficial effect on the electrical resistivity by improving the carrier density and Hall mobility. The lowest resistivity was 1.4 × 10^-3 Ω cm obtained at 400°C annealing temperature. The scattering mechanism in TTO films was discussed from the optical and electrical perspectives. The variation in Hall mobility with increasing the annealing temperature may be attributed to the scattering from the ionized and neutral impurities in TTO films.

Original language	English
Title of host publication	Nanocomposites, Nanostructures and Heterostructures of Correlated Oxide Systems
Pages	245-251
Number of pages	7
DOIs	https://doi.org/10.1557/opl.2012.1236
Publication status	Published - 2012
Externally published	Yes
Event	2012 MRS Spring Meeting - San Francisco, CA, United States Duration: 2012 Apr 9 → 2012 Apr 13

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1454
ISSN (Print)	0272-9172

Other

Other	2012 MRS Spring Meeting
Country/Territory	United States
City	San Francisco, CA
Period	12/4/9 → 12/4/13

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1557/opl.2012.1236

Cite this

@inproceedings{7c8873dc4de04c808d83ce1bb625e0be,

title = "Annealing effects on Ta doped SnO2 films",

abstract = "Ta doped SnO2 (TTO) films prepared on quartz glass substrates at 200°C were annealed in the air to investigate the annealing effect on the structural, the optical, and the electrical properties. It is shown that the annealing for TTO films resulted in beneficial effect on the electrical resistivity by improving the carrier density and Hall mobility. The lowest resistivity was 1.4 × 10-3 Ω cm obtained at 400°C annealing temperature. The scattering mechanism in TTO films was discussed from the optical and electrical perspectives. The variation in Hall mobility with increasing the annealing temperature may be attributed to the scattering from the ionized and neutral impurities in TTO films.",

author = "Junjun Jia and Yu Muto and Nobuto Oka and Yuzo Shigesato",

year = "2012",

doi = "10.1557/opl.2012.1236",

language = "English",

isbn = "9781605114316",

series = "Materials Research Society Symposium Proceedings",

pages = "245--251",

booktitle = "Nanocomposites, Nanostructures and Heterostructures of Correlated Oxide Systems",

}

TY - GEN

T1 - Annealing effects on Ta doped SnO2 films

AU - Jia, Junjun

AU - Muto, Yu

AU - Oka, Nobuto

AU - Shigesato, Yuzo

PY - 2012

Y1 - 2012

N2 - Ta doped SnO2 (TTO) films prepared on quartz glass substrates at 200°C were annealed in the air to investigate the annealing effect on the structural, the optical, and the electrical properties. It is shown that the annealing for TTO films resulted in beneficial effect on the electrical resistivity by improving the carrier density and Hall mobility. The lowest resistivity was 1.4 × 10-3 Ω cm obtained at 400°C annealing temperature. The scattering mechanism in TTO films was discussed from the optical and electrical perspectives. The variation in Hall mobility with increasing the annealing temperature may be attributed to the scattering from the ionized and neutral impurities in TTO films.

AB - Ta doped SnO2 (TTO) films prepared on quartz glass substrates at 200°C were annealed in the air to investigate the annealing effect on the structural, the optical, and the electrical properties. It is shown that the annealing for TTO films resulted in beneficial effect on the electrical resistivity by improving the carrier density and Hall mobility. The lowest resistivity was 1.4 × 10-3 Ω cm obtained at 400°C annealing temperature. The scattering mechanism in TTO films was discussed from the optical and electrical perspectives. The variation in Hall mobility with increasing the annealing temperature may be attributed to the scattering from the ionized and neutral impurities in TTO films.

UR - http://www.scopus.com/inward/record.url?scp=84870678872&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84870678872&partnerID=8YFLogxK

U2 - 10.1557/opl.2012.1236

DO - 10.1557/opl.2012.1236

M3 - Conference contribution

AN - SCOPUS:84870678872

SN - 9781605114316

T3 - Materials Research Society Symposium Proceedings

SP - 245

EP - 251

BT - Nanocomposites, Nanostructures and Heterostructures of Correlated Oxide Systems

T2 - 2012 MRS Spring Meeting

Y2 - 9 April 2012 through 13 April 2012

ER -