Annealing effects on Ta doped SnO2 films

Junjun Jia; Yu Muto; Nobuto Oka; Yuzo Shigesato

doi:10.1557/opl.2012.1236

Annealing effects on Ta doped SnO₂ films

Junjun Jia, Yu Muto, Nobuto Oka, Yuzo Shigesato

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Ta doped SnO₂ (TTO) films prepared on quartz glass substrates at 200°C were annealed in the air to investigate the annealing effect on the structural, the optical, and the electrical properties. It is shown that the annealing for TTO films resulted in beneficial effect on the electrical resistivity by improving the carrier density and Hall mobility. The lowest resistivity was 1.4 × 10^-3 Ω cm obtained at 400°C annealing temperature. The scattering mechanism in TTO films was discussed from the optical and electrical perspectives. The variation in Hall mobility with increasing the annealing temperature may be attributed to the scattering from the ionized and neutral impurities in TTO films.

Original language	English
Title of host publication	Nanocomposites, Nanostructures and Heterostructures of Correlated Oxide Systems
Pages	245-251
Number of pages	7
DOIs	https://doi.org/10.1557/opl.2012.1236
Publication status	Published - 2012 Dec 12
Externally published	Yes
Event	2012 MRS Spring Meeting - San Francisco, CA, United States Duration: 2012 Apr 9 → 2012 Apr 13

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1454
ISSN (Print)	0272-9172

Other

Other	2012 MRS Spring Meeting
Country	United States
City	San Francisco, CA
Period	12/4/9 → 12/4/13

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Annealing effects on Ta doped SnO2 films",

abstract = "Ta doped SnO2 (TTO) films prepared on quartz glass substrates at 200°C were annealed in the air to investigate the annealing effect on the structural, the optical, and the electrical properties. It is shown that the annealing for TTO films resulted in beneficial effect on the electrical resistivity by improving the carrier density and Hall mobility. The lowest resistivity was 1.4 × 10-3 Ω cm obtained at 400°C annealing temperature. The scattering mechanism in TTO films was discussed from the optical and electrical perspectives. The variation in Hall mobility with increasing the annealing temperature may be attributed to the scattering from the ionized and neutral impurities in TTO films.",

author = "Junjun Jia and Yu Muto and Nobuto Oka and Yuzo Shigesato",

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doi = "10.1557/opl.2012.1236",

language = "English",

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series = "Materials Research Society Symposium Proceedings",

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note = "2012 MRS Spring Meeting ; Conference date: 09-04-2012 Through 13-04-2012",

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AU - Jia, Junjun

AU - Muto, Yu

AU - Oka, Nobuto

AU - Shigesato, Yuzo

PY - 2012/12/12

Y1 - 2012/12/12

N2 - Ta doped SnO2 (TTO) films prepared on quartz glass substrates at 200°C were annealed in the air to investigate the annealing effect on the structural, the optical, and the electrical properties. It is shown that the annealing for TTO films resulted in beneficial effect on the electrical resistivity by improving the carrier density and Hall mobility. The lowest resistivity was 1.4 × 10-3 Ω cm obtained at 400°C annealing temperature. The scattering mechanism in TTO films was discussed from the optical and electrical perspectives. The variation in Hall mobility with increasing the annealing temperature may be attributed to the scattering from the ionized and neutral impurities in TTO films.

AB - Ta doped SnO2 (TTO) films prepared on quartz glass substrates at 200°C were annealed in the air to investigate the annealing effect on the structural, the optical, and the electrical properties. It is shown that the annealing for TTO films resulted in beneficial effect on the electrical resistivity by improving the carrier density and Hall mobility. The lowest resistivity was 1.4 × 10-3 Ω cm obtained at 400°C annealing temperature. The scattering mechanism in TTO films was discussed from the optical and electrical perspectives. The variation in Hall mobility with increasing the annealing temperature may be attributed to the scattering from the ionized and neutral impurities in TTO films.

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