Annealing properties of Si-atomic-layer-doped GaAs

Yoshiharu Yamauchi, Toshiki Makimoto, Yoshiji Horikoshi

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Si-atomic-layer-doped GaAs layers are grown at 520°C by flow-rate modulation epitaxy using a 1-s silane pulse. Carrier profiles are measured by the capacitance-voltage method before and after annealing at 700, 800, and 900°C. The sheet carrier concentration increases with the silane mole fraction, and saturates at about 3 × 1012 cm-2. The samples with saturated sheet carrier concentrations exhibit a distinct plateau at the top of the carrier concentration profile after annealing, while the samples with unsaturated sheet carrier concentrations show normal Gaussian-like broadening. The peak carrier concentration at the plateau of the annealed sample is found to be sensitive to annealing temperature, indicating that the carrier concentration is controlled by some thermodynamic limitation.

Original languageEnglish
Pages (from-to)1689-1692
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume28
Issue number10
Publication statusPublished - 1989 Oct
Externally publishedYes

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Carrier concentration
Annealing
annealing
Silanes
silanes
plateaus
Epitaxial growth
profiles
epitaxy
Capacitance
Flow rate
Modulation
Thermodynamics
flow velocity
capacitance
modulation
Electric potential
thermodynamics
electric potential
pulses

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Annealing properties of Si-atomic-layer-doped GaAs. / Yamauchi, Yoshiharu; Makimoto, Toshiki; Horikoshi, Yoshiji.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 28, No. 10, 10.1989, p. 1689-1692.

Research output: Contribution to journalArticle

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