Anodic bonding below 180 °C for packaging and assembling of MEMS using lithium aluminosilicate-β-quartz glass-ceramic

Shuichi Shoji, Hiroto Kikuchi, Hirotaka Torigoe

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    18 Citations (Scopus)

    Abstract

    Silicon-to-glass anodic bonding is performed at temperature below 180 °C using lithium aluminosilicate - β-quartz glass-ceramic. High alkaline ion mobility at low temperature which is required for bonding and thermal expansion coefficient matching to Si is realized by controlling the composition of the glass-ceramic. Bonding is obtained at the lowest temperature of 140 °C. Useful bonding conditions are temperature above 160 °C (applied voltage of above 500 V). Since the etch rate of the glass-ceramic is five times higher than that of Pyrex glass in HF wet etching and the undercut is very small with Cr-Au etch mask, three dimensional structures are easily fabricated. Low temperature anodic bonding using this type of glass-ceramic is useful for the packaging and assembling of MEMS.

    Original languageEnglish
    Title of host publicationProceedings of the IEEE Micro Electro Mechanical Systems (MEMS)
    Editors Anon
    Place of PublicationPiscataway, NJ, United States
    PublisherIEEE
    Pages482-487
    Number of pages6
    Publication statusPublished - 1997
    EventProceedings of the 1997 10th Annual International Workshop on Micro Electro Mechanical Systems, MEMS - Nagoya, Jpn
    Duration: 1997 Jan 261997 Jan 30

    Other

    OtherProceedings of the 1997 10th Annual International Workshop on Micro Electro Mechanical Systems, MEMS
    CityNagoya, Jpn
    Period97/1/2697/1/30

    Fingerprint

    Aluminosilicates
    Glass ceramics
    MEMS
    Quartz
    Packaging
    Lithium
    Temperature
    Glass
    Wet etching
    Thermal expansion
    Masks
    Silicon
    Ions
    Electric potential
    Chemical analysis

    ASJC Scopus subject areas

    • Control and Systems Engineering
    • Electrical and Electronic Engineering
    • Mechanical Engineering

    Cite this

    Shoji, S., Kikuchi, H., & Torigoe, H. (1997). Anodic bonding below 180 °C for packaging and assembling of MEMS using lithium aluminosilicate-β-quartz glass-ceramic. In Anon (Ed.), Proceedings of the IEEE Micro Electro Mechanical Systems (MEMS) (pp. 482-487). Piscataway, NJ, United States: IEEE.

    Anodic bonding below 180 °C for packaging and assembling of MEMS using lithium aluminosilicate-β-quartz glass-ceramic. / Shoji, Shuichi; Kikuchi, Hiroto; Torigoe, Hirotaka.

    Proceedings of the IEEE Micro Electro Mechanical Systems (MEMS). ed. / Anon. Piscataway, NJ, United States : IEEE, 1997. p. 482-487.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Shoji, S, Kikuchi, H & Torigoe, H 1997, Anodic bonding below 180 °C for packaging and assembling of MEMS using lithium aluminosilicate-β-quartz glass-ceramic. in Anon (ed.), Proceedings of the IEEE Micro Electro Mechanical Systems (MEMS). IEEE, Piscataway, NJ, United States, pp. 482-487, Proceedings of the 1997 10th Annual International Workshop on Micro Electro Mechanical Systems, MEMS, Nagoya, Jpn, 97/1/26.
    Shoji S, Kikuchi H, Torigoe H. Anodic bonding below 180 °C for packaging and assembling of MEMS using lithium aluminosilicate-β-quartz glass-ceramic. In Anon, editor, Proceedings of the IEEE Micro Electro Mechanical Systems (MEMS). Piscataway, NJ, United States: IEEE. 1997. p. 482-487
    Shoji, Shuichi ; Kikuchi, Hiroto ; Torigoe, Hirotaka. / Anodic bonding below 180 °C for packaging and assembling of MEMS using lithium aluminosilicate-β-quartz glass-ceramic. Proceedings of the IEEE Micro Electro Mechanical Systems (MEMS). editor / Anon. Piscataway, NJ, United States : IEEE, 1997. pp. 482-487
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    abstract = "Silicon-to-glass anodic bonding is performed at temperature below 180 °C using lithium aluminosilicate - β-quartz glass-ceramic. High alkaline ion mobility at low temperature which is required for bonding and thermal expansion coefficient matching to Si is realized by controlling the composition of the glass-ceramic. Bonding is obtained at the lowest temperature of 140 °C. Useful bonding conditions are temperature above 160 °C (applied voltage of above 500 V). Since the etch rate of the glass-ceramic is five times higher than that of Pyrex glass in HF wet etching and the undercut is very small with Cr-Au etch mask, three dimensional structures are easily fabricated. Low temperature anodic bonding using this type of glass-ceramic is useful for the packaging and assembling of MEMS.",
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