Anomalous flatband voltage shift of AlFxOy/Al2O3 MOS capacitors

A consideration on dipole layer formation at dielectric interfaces with different anions

Jiayang Fei, Ryota Kunugi, Takanobu Watanabe, Koji Kita

    Research output: Contribution to journalArticle

    3 Citations (Scopus)

    Abstract

    We experimentally investigated the dipole layer formation at Al2O3/AlFxOy (x:y = 1:1 and 1:2.5) interfaces, which would be explicable by considering the anion density difference as the key parameter to determine the dipole direction at the dielectric interface with different anions. Molecular dynamics (MD) simulation of Al2O3/AlF3 demonstrates a preferential migration of O from Al2O3 to AlF3 compared with F to the opposite direction which suggests that anion migration due to the density difference could determine the direction of the dipole layer formed at this interface. In addition, charge separation due to the difference in the anion valences could have certain effect simultaneously.

    Original languageEnglish
    Article number162907
    JournalApplied Physics Letters
    Volume110
    Issue number16
    DOIs
    Publication statusPublished - 2017 Apr 17

    Fingerprint

    capacitors
    dipoles
    anions
    shift
    electric potential
    polarization (charge separation)
    molecular dynamics
    valence
    simulation

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Anomalous flatband voltage shift of AlFxOy/Al2O3 MOS capacitors : A consideration on dipole layer formation at dielectric interfaces with different anions. / Fei, Jiayang; Kunugi, Ryota; Watanabe, Takanobu; Kita, Koji.

    In: Applied Physics Letters, Vol. 110, No. 16, 162907, 17.04.2017.

    Research output: Contribution to journalArticle

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