Anomalous flatband voltage shift of AlFxOy/Al2O3 MOS capacitors: A consideration on dipole layer formation at dielectric interfaces with different anions

Jiayang Fei, Ryota Kunugi, Takanobu Watanabe, Koji Kita

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4 Citations (Scopus)

Abstract

We experimentally investigated the dipole layer formation at Al2O3/AlFxOy (x:y = 1:1 and 1:2.5) interfaces, which would be explicable by considering the anion density difference as the key parameter to determine the dipole direction at the dielectric interface with different anions. Molecular dynamics (MD) simulation of Al2O3/AlF3 demonstrates a preferential migration of O from Al2O3 to AlF3 compared with F to the opposite direction which suggests that anion migration due to the density difference could determine the direction of the dipole layer formed at this interface. In addition, charge separation due to the difference in the anion valences could have certain effect simultaneously.

Original languageEnglish
Article number162907
JournalApplied Physics Letters
Volume110
Issue number16
DOIs
Publication statusPublished - 2017 Apr 17

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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