Anomalous variation of phonon Raman intensities near the metal-to-Mott-insulator transition in titanium oxide systems

Takuro Katsufuji, Y. Tokura

Research output: Contribution to journalArticle

40 Citations (Scopus)

Abstract

Raman-scattering spectra were investigated for strongly correlated electron systems, La1-xSrxTiO3 and Y1-xCaxTiO3, which undergo a metal-to-Mott-insulator transition under variation of the band filling. The phonon spectra decrease in their intensity as the system approaches the metal-insulator phase boundary, accompanied by a critical enhancement of the value of the effective mass, and almost disappear in the insulating phase. We found that the phonon spectral intensity in the metallic region approximately scales with (n/m*)2, n and m* being the density and effective mass of conduction carriers.

Original languageEnglish
Pages (from-to)2704-2707
Number of pages4
JournalPhysical Review B
Volume50
Issue number4
DOIs
Publication statusPublished - 1994
Externally publishedYes

Fingerprint

Titanium oxides
titanium oxides
Metals
insulators
Phase boundaries
metals
Raman scattering
Raman spectra
conduction
Electrons
augmentation
electrons
titanium dioxide

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Anomalous variation of phonon Raman intensities near the metal-to-Mott-insulator transition in titanium oxide systems. / Katsufuji, Takuro; Tokura, Y.

In: Physical Review B, Vol. 50, No. 4, 1994, p. 2704-2707.

Research output: Contribution to journalArticle

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AB - Raman-scattering spectra were investigated for strongly correlated electron systems, La1-xSrxTiO3 and Y1-xCaxTiO3, which undergo a metal-to-Mott-insulator transition under variation of the band filling. The phonon spectra decrease in their intensity as the system approaches the metal-insulator phase boundary, accompanied by a critical enhancement of the value of the effective mass, and almost disappear in the insulating phase. We found that the phonon spectral intensity in the metallic region approximately scales with (n/m*)2, n and m* being the density and effective mass of conduction carriers.

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