Antiferromagnetic heusler Ru 2 MnGe epitaxial thin films showing néel temperatures up to 353 K

N. Fukatani*, H. Fujita, T. Miyawaki, K. Ueda, H. Asano

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


Structural and electrical transport properties were investigated for Heusler-type alloy Ru 2 MnGe thin films. Ru 2 MnGe films on MgO substrate were subjected to an in-plane compressive strain due to their small lattice mismatch (-0.7\%, and exhibited enhanced antiferromagnetic transition temperature (T-N up to 353 K, which is much higher than that of the bulk material (T-N= 316 K). In contrast, the films on MgAl 2O 4 were almost in a relaxed-strain state, and showed T N close to the bulk value (304 K). It was also found that the T N of Ru 2MnGe thin films on MgO exhibited oscillating behavior depending on c/a ratio. We argued that the next-nearest neighbor magnetic interactions (J-2 of Mn-Mn atoms has oscillated depending on the degree of strain in Ru 2MnGe, which contribute to the oscillating behavior of T N against c/a.

Original languageEnglish
Article number6332706
Pages (from-to)3211-3214
Number of pages4
JournalIEEE Transactions on Magnetics
Issue number11
Publication statusPublished - 2012
Externally publishedYes


  • Antiferromagnetic materials
  • Néel temperature
  • Ru MnGe
  • strain effect

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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