Application of 100% ozone gas process to rapid low-temperature oxidation

H. Nonaka, Shingo Ichimura, T. Nishiguchi, Y. Morikawa, M. Kekura, M. Miyamoto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

A 100% ozone oxidation process has been applied for the first time to rapid low-temperature oxidation of silicon to fabricate device quality SiO2 films. A new quartz cold wall-type furnace equipped with a halogen lamp heater was built for safe and efficient handling of 100% ozone gas supplied from a pure ozone generator which we have developed. The working pressure of the furnace was typically 900 Pa, which resulted in the growth of 4 nm SiO2 film within 4 minutes at 400°C. A very low excitation energy observed for the SiO2 film growth indicates that the actual reaction species in the process are active oxygen radicals generated from the thermal decomposition of ozone molecules at the sample surface. The electrical properties of ozone-oxidized SiO2 films were evaluated by measuring the C-V and I-V characteristics of the MIS structure with Al electrodes. The films fabricated at 400-600°C with thickness of 5-11 nm all show properties matching the device quality, i.e. low interface state density (<5×1010 cm-2eV-1) and high breakdown voltage (>13 MVcm-1).

Original languageEnglish
Title of host publication10th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2002
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages119-123
Number of pages5
ISBN (Electronic)0780374657, 9780780374652
DOIs
Publication statusPublished - 2002 Jan 1
Externally publishedYes
Event10th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2002 - Vancouver, Canada
Duration: 2002 Sep 252002 Sep 27

Other

Other10th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2002
CountryCanada
CityVancouver
Period02/9/2502/9/27

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering

Cite this

Nonaka, H., Ichimura, S., Nishiguchi, T., Morikawa, Y., Kekura, M., & Miyamoto, M. (2002). Application of 100% ozone gas process to rapid low-temperature oxidation. In 10th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2002 (pp. 119-123). [1039449] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RTP.2002.1039449