Application of high purity ozone beam in the formation and characterization of SiO2 and other oxide thin films

S. Ichimura, H. Nonaka, A. Kurokawa, K. Nakamura

Research output: Contribution to conferencePaper

1 Citation (Scopus)

Abstract

A new ozone jet generator which can supply high purity ozone beam was specially fabricated, and applied to the formation and characterization of oxide thin films. After careful investigation of SiO2 thin film formation on Si substrates using either ozone or molecular oxygen, it was confirmed that; i) an atomic oxygen generated at dissociation of ozone attacks a back bond of Si to form Si-O-Si bonding, ii) the suboxide (SiOx; x<2) formation at the SiO2/Si interface was suppressed by the ozone oxidation, and iii) a stable SiO2 film was formed by the ozone exposure at a higher substrate temperature (>about 300 °C). It was also confirmed that ozone exposure during surface analysis using an electron beam could diminish (and erase) sample charging even the thickness of a SiO2 sample is in the order of sub mm.

Original languageEnglish
Pages100-109
Number of pages10
Publication statusPublished - 1998 Jan 1
Externally publishedYes
EventProceedings of the 1998 3rd International Conference on Electric Charge in Solid Insulators, CSC'3 - Paris, Fr
Duration: 1998 Jun 291998 Jul 3

Other

OtherProceedings of the 1998 3rd International Conference on Electric Charge in Solid Insulators, CSC'3
CityParis, Fr
Period98/6/2998/7/3

ASJC Scopus subject areas

  • Engineering(all)

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    Ichimura, S., Nonaka, H., Kurokawa, A., & Nakamura, K. (1998). Application of high purity ozone beam in the formation and characterization of SiO2 and other oxide thin films. 100-109. Paper presented at Proceedings of the 1998 3rd International Conference on Electric Charge in Solid Insulators, CSC'3, Paris, Fr, .