Application of high purity ozone beam in the formation and characterization of SiO2 and other oxide thin films

Shingo Ichimura, H. Nonaka, A. Kurokawa, K. Nakamura

Research output: Contribution to journalArticle

Abstract

A new ozone jet generator which can supply high purity ozone beam was specially fabricated, and applied to the formation and characterization of oxide thin films. After careful investigation of SiO2 thin film formation on Si substrates using either ozone or molecular oxygen, it was confirmed that; i) an atomic oxygen generated at dissociation of ozone attacks a back bond of Si to form Si-O-Si bonding, ii) the suboxide (SiOx; x<2) formation at the SiO2/Si interface was suppressed by the ozone oxidation, and iii)a stable SiO2 film was formed by the ozone exposure at a higher substrate temperature (>about 300°C). It was also confirmed that ozone exposure during surface analysis using an electron beam could diminish (and erase) sample charging even the the thickness of a SiO2 sample is in the order of sub mm.

Original languageEnglish
Pages (from-to)100-109
Number of pages10
JournalVide: Science, Technique et Applications
Issue number287 SUPPL.1
Publication statusPublished - 1998 Dec 1
Externally publishedYes

Fingerprint

Ozone
ozone
Oxide films
purity
Thin films
oxides
thin films
Molecular oxygen
Surface analysis
oxygen
attack
charging
Electron beams
generators
dissociation
electron beams
Oxygen
Substrates

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Application of high purity ozone beam in the formation and characterization of SiO2 and other oxide thin films. / Ichimura, Shingo; Nonaka, H.; Kurokawa, A.; Nakamura, K.

In: Vide: Science, Technique et Applications, No. 287 SUPPL.1, 01.12.1998, p. 100-109.

Research output: Contribution to journalArticle

@article{31a88c78d56f43ccaa57d25082c0307d,
title = "Application of high purity ozone beam in the formation and characterization of SiO2 and other oxide thin films",
abstract = "A new ozone jet generator which can supply high purity ozone beam was specially fabricated, and applied to the formation and characterization of oxide thin films. After careful investigation of SiO2 thin film formation on Si substrates using either ozone or molecular oxygen, it was confirmed that; i) an atomic oxygen generated at dissociation of ozone attacks a back bond of Si to form Si-O-Si bonding, ii) the suboxide (SiOx; x<2) formation at the SiO2/Si interface was suppressed by the ozone oxidation, and iii)a stable SiO2 film was formed by the ozone exposure at a higher substrate temperature (>about 300°C). It was also confirmed that ozone exposure during surface analysis using an electron beam could diminish (and erase) sample charging even the the thickness of a SiO2 sample is in the order of sub mm.",
author = "Shingo Ichimura and H. Nonaka and A. Kurokawa and K. Nakamura",
year = "1998",
month = "12",
day = "1",
language = "English",
pages = "100--109",
journal = "Vide: Science, Technique et Applications",
issn = "1266-0167",
publisher = "Societe Francaise du Vide",
number = "287 SUPPL.1",

}

TY - JOUR

T1 - Application of high purity ozone beam in the formation and characterization of SiO2 and other oxide thin films

AU - Ichimura, Shingo

AU - Nonaka, H.

AU - Kurokawa, A.

AU - Nakamura, K.

PY - 1998/12/1

Y1 - 1998/12/1

N2 - A new ozone jet generator which can supply high purity ozone beam was specially fabricated, and applied to the formation and characterization of oxide thin films. After careful investigation of SiO2 thin film formation on Si substrates using either ozone or molecular oxygen, it was confirmed that; i) an atomic oxygen generated at dissociation of ozone attacks a back bond of Si to form Si-O-Si bonding, ii) the suboxide (SiOx; x<2) formation at the SiO2/Si interface was suppressed by the ozone oxidation, and iii)a stable SiO2 film was formed by the ozone exposure at a higher substrate temperature (>about 300°C). It was also confirmed that ozone exposure during surface analysis using an electron beam could diminish (and erase) sample charging even the the thickness of a SiO2 sample is in the order of sub mm.

AB - A new ozone jet generator which can supply high purity ozone beam was specially fabricated, and applied to the formation and characterization of oxide thin films. After careful investigation of SiO2 thin film formation on Si substrates using either ozone or molecular oxygen, it was confirmed that; i) an atomic oxygen generated at dissociation of ozone attacks a back bond of Si to form Si-O-Si bonding, ii) the suboxide (SiOx; x<2) formation at the SiO2/Si interface was suppressed by the ozone oxidation, and iii)a stable SiO2 film was formed by the ozone exposure at a higher substrate temperature (>about 300°C). It was also confirmed that ozone exposure during surface analysis using an electron beam could diminish (and erase) sample charging even the the thickness of a SiO2 sample is in the order of sub mm.

UR - http://www.scopus.com/inward/record.url?scp=18844432571&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=18844432571&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:18844432571

SP - 100

EP - 109

JO - Vide: Science, Technique et Applications

JF - Vide: Science, Technique et Applications

SN - 1266-0167

IS - 287 SUPPL.1

ER -