Application of high purity ozone beam in the formation and characterization of SiO2 and other oxide thin films

S. Ichimura, H. Nonaka, A. Kurokawa, K. Nakamura

Research output: Contribution to journalArticle

Abstract

A new ozone jet generator which can supply high purity ozone beam was specially fabricated, and applied to the formation and characterization of oxide thin films. After careful investigation of SiO2 thin film formation on Si substrates using either ozone or molecular oxygen, it was confirmed that; i) an atomic oxygen generated at dissociation of ozone attacks a back bond of Si to form Si-O-Si bonding, ii) the suboxide (SiOx; x<2) formation at the SiO2/Si interface was suppressed by the ozone oxidation, and iii)a stable SiO2 film was formed by the ozone exposure at a higher substrate temperature (>about 300°C). It was also confirmed that ozone exposure during surface analysis using an electron beam could diminish (and erase) sample charging even the the thickness of a SiO2 sample is in the order of sub mm.

Original languageEnglish
Pages (from-to)100-109
Number of pages10
JournalVide: Science, Technique et Applications
Issue number287 SUPPL.1
Publication statusPublished - 1998 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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