Abstract
We report a new PIN photodiode using an InAs/InAsGaAs quantum-dot absorption layer with avalanche multiplication. For this photodiode, excellent I-V curves showing avalanche multiplication and a high 3-dB cutoff frequency were achieved. Designing advanced wide bandwidth avalanche photodiodes over 40 GHz is challenging [1]. A PIN structure that has a multiplied absorption layer is advantageous for realizing a short transit time in contrast to a separated absorption and multiplication (SAM) structure. Moreover, quantum dot technologies applied for obtaining high photovoltaic efficiency in solar cells are very attractive.
| Original language | English |
|---|---|
| Title of host publication | 2013 Conference on Lasers and Electro-Optics Europe and International Quantum Electronics Conference, CLEO/Europe-IQEC 2013 |
| Publisher | IEEE Computer Society |
| DOIs | |
| Publication status | Published - 2013 |
| Externally published | Yes |
| Event | 2013 Conference on Lasers and Electro-Optics Europe and International Quantum Electronics Conference, CLEO/Europe-IQEC 2013 - Munich, Germany Duration: 2013 May 12 → 2013 May 16 |
Other
| Other | 2013 Conference on Lasers and Electro-Optics Europe and International Quantum Electronics Conference, CLEO/Europe-IQEC 2013 |
|---|---|
| Country | Germany |
| City | Munich |
| Period | 13/5/12 → 13/5/16 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
Application of InAs quantum dots for high-speed photodiodes in fiber optics. / Umezawa, T.; Akahane, K.; Kanno, A.; Kawanishi, Tetsuya.
2013 Conference on Lasers and Electro-Optics Europe and International Quantum Electronics Conference, CLEO/Europe-IQEC 2013. IEEE Computer Society, 2013. 6801253.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Application of InAs quantum dots for high-speed photodiodes in fiber optics
AU - Umezawa, T.
AU - Akahane, K.
AU - Kanno, A.
AU - Kawanishi, Tetsuya
PY - 2013
Y1 - 2013
N2 - We report a new PIN photodiode using an InAs/InAsGaAs quantum-dot absorption layer with avalanche multiplication. For this photodiode, excellent I-V curves showing avalanche multiplication and a high 3-dB cutoff frequency were achieved. Designing advanced wide bandwidth avalanche photodiodes over 40 GHz is challenging [1]. A PIN structure that has a multiplied absorption layer is advantageous for realizing a short transit time in contrast to a separated absorption and multiplication (SAM) structure. Moreover, quantum dot technologies applied for obtaining high photovoltaic efficiency in solar cells are very attractive.
AB - We report a new PIN photodiode using an InAs/InAsGaAs quantum-dot absorption layer with avalanche multiplication. For this photodiode, excellent I-V curves showing avalanche multiplication and a high 3-dB cutoff frequency were achieved. Designing advanced wide bandwidth avalanche photodiodes over 40 GHz is challenging [1]. A PIN structure that has a multiplied absorption layer is advantageous for realizing a short transit time in contrast to a separated absorption and multiplication (SAM) structure. Moreover, quantum dot technologies applied for obtaining high photovoltaic efficiency in solar cells are very attractive.
UR - http://www.scopus.com/inward/record.url?scp=84900336617&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84900336617&partnerID=8YFLogxK
U2 - 10.1109/CLEOE-IQEC.2013.6801253
DO - 10.1109/CLEOE-IQEC.2013.6801253
M3 - Conference contribution
AN - SCOPUS:84900336617
BT - 2013 Conference on Lasers and Electro-Optics Europe and International Quantum Electronics Conference, CLEO/Europe-IQEC 2013
PB - IEEE Computer Society
ER -