Abstract
We report a new PIN photodiode using an InAs/InAsGaAs quantum-dot absorption layer with avalanche multiplication. For this photodiode, excellent I-V curves showing avalanche multiplication and a high 3-dB cutoff frequency were achieved. Designing advanced wide bandwidth avalanche photodiodes over 40 GHz is challenging [1]. A PIN structure that has a multiplied absorption layer is advantageous for realizing a short transit time in contrast to a separated absorption and multiplication (SAM) structure. Moreover, quantum dot technologies applied for obtaining high photovoltaic efficiency in solar cells are very attractive.
| Original language | English |
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| DOIs | |
| Publication status | Published - 2013 Jan 1 |
| Event | 2013 Conference on Lasers and Electro-Optics Europe and International Quantum Electronics Conference, CLEO/Europe-IQEC 2013 - Munich, Germany Duration: 2013 May 12 → 2013 May 16 |
Other
| Other | 2013 Conference on Lasers and Electro-Optics Europe and International Quantum Electronics Conference, CLEO/Europe-IQEC 2013 |
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| Country | Germany |
| City | Munich |
| Period | 13/5/12 → 13/5/16 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
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Umezawa, T., Akahane, K., Kanno, A., & Kawanishi, T. (2013). Application of InAs quantum dots for high-speed photodiodes in fiber optics. Paper presented at 2013 Conference on Lasers and Electro-Optics Europe and International Quantum Electronics Conference, CLEO/Europe-IQEC 2013, Munich, Germany. https://doi.org/10.1109/CLEOE-IQEC.2013.6801253