Application of InAs quantum dots for high-speed photodiodes in fiber optics

T. Umezawa; K. Akahane; A. Kanno; T. Kawanishi

doi:10.1109/CLEOE-IQEC.2013.6801253

Application of InAs quantum dots for high-speed photodiodes in fiber optics

T. Umezawa, K. Akahane, A. Kanno, T. Kawanishi

Research output: Contribution to conference › Paper

Abstract

We report a new PIN photodiode using an InAs/InAsGaAs quantum-dot absorption layer with avalanche multiplication. For this photodiode, excellent I-V curves showing avalanche multiplication and a high 3-dB cutoff frequency were achieved. Designing advanced wide bandwidth avalanche photodiodes over 40 GHz is challenging [1]. A PIN structure that has a multiplied absorption layer is advantageous for realizing a short transit time in contrast to a separated absorption and multiplication (SAM) structure. Moreover, quantum dot technologies applied for obtaining high photovoltaic efficiency in solar cells are very attractive.

Original language	English
DOIs	https://doi.org/10.1109/CLEOE-IQEC.2013.6801253
Publication status	Published - 2013 Jan 1
Externally published	Yes
Event	2013 Conference on Lasers and Electro-Optics Europe and International Quantum Electronics Conference, CLEO/Europe-IQEC 2013 - Munich, Germany Duration: 2013 May 12 → 2013 May 16

Other

Other	2013 Conference on Lasers and Electro-Optics Europe and International Quantum Electronics Conference, CLEO/Europe-IQEC 2013
Country	Germany
City	Munich
Period	13/5/12 → 13/5/16

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1109/CLEOE-IQEC.2013.6801253

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abstract = "We report a new PIN photodiode using an InAs/InAsGaAs quantum-dot absorption layer with avalanche multiplication. For this photodiode, excellent I-V curves showing avalanche multiplication and a high 3-dB cutoff frequency were achieved. Designing advanced wide bandwidth avalanche photodiodes over 40 GHz is challenging [1]. A PIN structure that has a multiplied absorption layer is advantageous for realizing a short transit time in contrast to a separated absorption and multiplication (SAM) structure. Moreover, quantum dot technologies applied for obtaining high photovoltaic efficiency in solar cells are very attractive.",

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AU - Umezawa, T.

AU - Akahane, K.

AU - Kanno, A.

AU - Kawanishi, T.

PY - 2013/1/1

Y1 - 2013/1/1

N2 - We report a new PIN photodiode using an InAs/InAsGaAs quantum-dot absorption layer with avalanche multiplication. For this photodiode, excellent I-V curves showing avalanche multiplication and a high 3-dB cutoff frequency were achieved. Designing advanced wide bandwidth avalanche photodiodes over 40 GHz is challenging [1]. A PIN structure that has a multiplied absorption layer is advantageous for realizing a short transit time in contrast to a separated absorption and multiplication (SAM) structure. Moreover, quantum dot technologies applied for obtaining high photovoltaic efficiency in solar cells are very attractive.

AB - We report a new PIN photodiode using an InAs/InAsGaAs quantum-dot absorption layer with avalanche multiplication. For this photodiode, excellent I-V curves showing avalanche multiplication and a high 3-dB cutoff frequency were achieved. Designing advanced wide bandwidth avalanche photodiodes over 40 GHz is challenging [1]. A PIN structure that has a multiplied absorption layer is advantageous for realizing a short transit time in contrast to a separated absorption and multiplication (SAM) structure. Moreover, quantum dot technologies applied for obtaining high photovoltaic efficiency in solar cells are very attractive.

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Y2 - 12 May 2013 through 16 May 2013

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