Application of InAs quantum dots for high-speed photodiodes in fiber optics

T. Umezawa; K. Akahane; A. Kanno; T. Kawanishi

doi:10.1109/CLEOE-IQEC.2013.6801253

Application of InAs quantum dots for high-speed photodiodes in fiber optics

T. Umezawa, K. Akahane, A. Kanno, T. Kawanishi

Research output: Contribution to conference › Paper › peer-review

Abstract

We report a new PIN photodiode using an InAs/InAsGaAs quantum-dot absorption layer with avalanche multiplication. For this photodiode, excellent I-V curves showing avalanche multiplication and a high 3-dB cutoff frequency were achieved. Designing advanced wide bandwidth avalanche photodiodes over 40 GHz is challenging [1]. A PIN structure that has a multiplied absorption layer is advantageous for realizing a short transit time in contrast to a separated absorption and multiplication (SAM) structure. Moreover, quantum dot technologies applied for obtaining high photovoltaic efficiency in solar cells are very attractive.

Original language	English
DOIs	https://doi.org/10.1109/CLEOE-IQEC.2013.6801253
Publication status	Published - 2013 Jan 1
Externally published	Yes
Event	2013 Conference on Lasers and Electro-Optics Europe and International Quantum Electronics Conference, CLEO/Europe-IQEC 2013 - Munich, Germany Duration: 2013 May 12 → 2013 May 16

Other

Other	2013 Conference on Lasers and Electro-Optics Europe and International Quantum Electronics Conference, CLEO/Europe-IQEC 2013
Country	Germany
City	Munich
Period	13/5/12 → 13/5/16

ASJC Scopus subject areas

Electrical and Electronic Engineering

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@conference{9678cb5ffbeb4b63842d8628e61abe73,

title = "Application of InAs quantum dots for high-speed photodiodes in fiber optics",

abstract = "We report a new PIN photodiode using an InAs/InAsGaAs quantum-dot absorption layer with avalanche multiplication. For this photodiode, excellent I-V curves showing avalanche multiplication and a high 3-dB cutoff frequency were achieved. Designing advanced wide bandwidth avalanche photodiodes over 40 GHz is challenging [1]. A PIN structure that has a multiplied absorption layer is advantageous for realizing a short transit time in contrast to a separated absorption and multiplication (SAM) structure. Moreover, quantum dot technologies applied for obtaining high photovoltaic efficiency in solar cells are very attractive.",

author = "T. Umezawa and K. Akahane and A. Kanno and T. Kawanishi",

year = "2013",

month = jan,

day = "1",

doi = "10.1109/CLEOE-IQEC.2013.6801253",

language = "English",

note = "2013 Conference on Lasers and Electro-Optics Europe and International Quantum Electronics Conference, CLEO/Europe-IQEC 2013 ; Conference date: 12-05-2013 Through 16-05-2013",

}

TY - CONF

T1 - Application of InAs quantum dots for high-speed photodiodes in fiber optics

AU - Umezawa, T.

AU - Akahane, K.

AU - Kanno, A.

AU - Kawanishi, T.

PY - 2013/1/1

Y1 - 2013/1/1

N2 - We report a new PIN photodiode using an InAs/InAsGaAs quantum-dot absorption layer with avalanche multiplication. For this photodiode, excellent I-V curves showing avalanche multiplication and a high 3-dB cutoff frequency were achieved. Designing advanced wide bandwidth avalanche photodiodes over 40 GHz is challenging [1]. A PIN structure that has a multiplied absorption layer is advantageous for realizing a short transit time in contrast to a separated absorption and multiplication (SAM) structure. Moreover, quantum dot technologies applied for obtaining high photovoltaic efficiency in solar cells are very attractive.

AB - We report a new PIN photodiode using an InAs/InAsGaAs quantum-dot absorption layer with avalanche multiplication. For this photodiode, excellent I-V curves showing avalanche multiplication and a high 3-dB cutoff frequency were achieved. Designing advanced wide bandwidth avalanche photodiodes over 40 GHz is challenging [1]. A PIN structure that has a multiplied absorption layer is advantageous for realizing a short transit time in contrast to a separated absorption and multiplication (SAM) structure. Moreover, quantum dot technologies applied for obtaining high photovoltaic efficiency in solar cells are very attractive.

UR - http://www.scopus.com/inward/record.url?scp=84900336617&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84900336617&partnerID=8YFLogxK

U2 - 10.1109/CLEOE-IQEC.2013.6801253

DO - 10.1109/CLEOE-IQEC.2013.6801253

M3 - Paper

AN - SCOPUS:84900336617

T2 - 2013 Conference on Lasers and Electro-Optics Europe and International Quantum Electronics Conference, CLEO/Europe-IQEC 2013

Y2 - 12 May 2013 through 16 May 2013

ER -