Application of InAs quantum dots for high-speed photodiodes in fiber optics

T. Umezawa, K. Akahane, A. Kanno, Tetsuya Kawanishi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report a new PIN photodiode using an InAs/InAsGaAs quantum-dot absorption layer with avalanche multiplication. For this photodiode, excellent I-V curves showing avalanche multiplication and a high 3-dB cutoff frequency were achieved. Designing advanced wide bandwidth avalanche photodiodes over 40 GHz is challenging [1]. A PIN structure that has a multiplied absorption layer is advantageous for realizing a short transit time in contrast to a separated absorption and multiplication (SAM) structure. Moreover, quantum dot technologies applied for obtaining high photovoltaic efficiency in solar cells are very attractive.

Original languageEnglish
Title of host publication2013 Conference on Lasers and Electro-Optics Europe and International Quantum Electronics Conference, CLEO/Europe-IQEC 2013
PublisherIEEE Computer Society
DOIs
Publication statusPublished - 2013
Externally publishedYes
Event2013 Conference on Lasers and Electro-Optics Europe and International Quantum Electronics Conference, CLEO/Europe-IQEC 2013 - Munich, Germany
Duration: 2013 May 122013 May 16

Other

Other2013 Conference on Lasers and Electro-Optics Europe and International Quantum Electronics Conference, CLEO/Europe-IQEC 2013
CountryGermany
CityMunich
Period13/5/1213/5/16

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Umezawa, T., Akahane, K., Kanno, A., & Kawanishi, T. (2013). Application of InAs quantum dots for high-speed photodiodes in fiber optics. In 2013 Conference on Lasers and Electro-Optics Europe and International Quantum Electronics Conference, CLEO/Europe-IQEC 2013 [6801253] IEEE Computer Society. https://doi.org/10.1109/CLEOE-IQEC.2013.6801253