Abstract
We report a new PIN photodiode using an InAs/InAsGaAs quantum-dot absorption layer with avalanche multiplication. For this photodiode, excellent I-V curves showing avalanche multiplication and a high 3-dB cutoff frequency were achieved. Designing advanced wide bandwidth avalanche photodiodes over 40 GHz is challenging [1]. A PIN structure that has a multiplied absorption layer is advantageous for realizing a short transit time in contrast to a separated absorption and multiplication (SAM) structure. Moreover, quantum dot technologies applied for obtaining high photovoltaic efficiency in solar cells are very attractive.
Original language | English |
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DOIs | |
Publication status | Published - 2013 Jan 1 |
Externally published | Yes |
Event | 2013 Conference on Lasers and Electro-Optics Europe and International Quantum Electronics Conference, CLEO/Europe-IQEC 2013 - Munich, Germany Duration: 2013 May 12 → 2013 May 16 |
Other
Other | 2013 Conference on Lasers and Electro-Optics Europe and International Quantum Electronics Conference, CLEO/Europe-IQEC 2013 |
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Country/Territory | Germany |
City | Munich |
Period | 13/5/12 → 13/5/16 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering