Application of InAs quantum dots for high-speed photodiodes in fiber optics

T. Umezawa, K. Akahane, A. Kanno, T. Kawanishi

Research output: Contribution to conferencePaper

Abstract

We report a new PIN photodiode using an InAs/InAsGaAs quantum-dot absorption layer with avalanche multiplication. For this photodiode, excellent I-V curves showing avalanche multiplication and a high 3-dB cutoff frequency were achieved. Designing advanced wide bandwidth avalanche photodiodes over 40 GHz is challenging [1]. A PIN structure that has a multiplied absorption layer is advantageous for realizing a short transit time in contrast to a separated absorption and multiplication (SAM) structure. Moreover, quantum dot technologies applied for obtaining high photovoltaic efficiency in solar cells are very attractive.

Original languageEnglish
DOIs
Publication statusPublished - 2013 Jan 1
Externally publishedYes
Event2013 Conference on Lasers and Electro-Optics Europe and International Quantum Electronics Conference, CLEO/Europe-IQEC 2013 - Munich, Germany
Duration: 2013 May 122013 May 16

Other

Other2013 Conference on Lasers and Electro-Optics Europe and International Quantum Electronics Conference, CLEO/Europe-IQEC 2013
CountryGermany
CityMunich
Period13/5/1213/5/16

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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