Application of stm nanometer-size oxidation process to planar-type mim diode

Kazuhiko Matsumoto, Shu Takahashi, Masami Ishii, Masakatsu Hoshi, Akira Kurokawa, Shingo Ichimura, Atsushi Ando

Research output: Contribution to journalArticle

105 Citations (Scopus)

Abstract

Ultra fine oxidized titanium (Ti) lines 18 nm wide and 3 nm high have been formed on the surface of a 4 nm Ti layer on a SiC2/Si substrate using the scanning tunneling microscope [STM] tip as a selective anodization electrode. The dependence of the size of the oxidized titanium line on the various parameters is investigated. Theformed oxidized titanium line has resistivity of 2 x 104ohm cm, which is a value seven orders of magnitude higherthan that of the deposited Ti layer. The oxidized Ti line is used in the planar type metal-insulator-metal [MIM] diode, and works as an energy barrier for the electron. The energy barrier height of the oxidized Ti line is found tobe δEg — 0.2h eV.

Original languageEnglish
Pages (from-to)1387-1390
Number of pages4
JournalJapanese journal of applied physics
Volume34
Issue number2S
DOIs
Publication statusPublished - 1995 Feb
Externally publishedYes

Keywords

  • AFM
  • MIM diode
  • Planar type
  • Quantum wire
  • STM
  • STM process

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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