Abstract
Ultra fine oxidized titanium (Ti) lines 18 nm wide and 3 nm high have been formed on the surface of a 4 nm Ti layer on a SiC2/Si substrate using the scanning tunneling microscope [STM] tip as a selective anodization electrode. The dependence of the size of the oxidized titanium line on the various parameters is investigated. Theformed oxidized titanium line has resistivity of 2 x 104ohm cm, which is a value seven orders of magnitude higherthan that of the deposited Ti layer. The oxidized Ti line is used in the planar type metal-insulator-metal [MIM] diode, and works as an energy barrier for the electron. The energy barrier height of the oxidized Ti line is found tobe δEg — 0.2h eV.
Original language | English |
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Pages (from-to) | 1387-1390 |
Number of pages | 4 |
Journal | Japanese journal of applied physics |
Volume | 34 |
Issue number | 2S |
DOIs | |
Publication status | Published - 1995 Feb |
Externally published | Yes |
Keywords
- AFM
- MIM diode
- Planar type
- Quantum wire
- STM
- STM process
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)