Application of stm nanometer-size oxidation process to planar-type mim diode

Kazuhiko Matsumoto; Shu Takahashi; Masami Ishii; Masakatsu Hoshi; Akira Kurokawa; Shingo Ichimura; Atsushi Ando

doi:10.1143/JJAP.34.1387

Application of stm nanometer-size oxidation process to planar-type mim diode

Kazuhiko Matsumoto, Shu Takahashi, Masami Ishii, Masakatsu Hoshi, Akira Kurokawa, Shingo Ichimura, Atsushi Ando

Research output: Contribution to journal › Article › peer-review

106 Citations (Scopus)

Abstract

Ultra fine oxidized titanium (Ti) lines 18 nm wide and 3 nm high have been formed on the surface of a 4 nm Ti layer on a SiC₂/Si substrate using the scanning tunneling microscope [STM] tip as a selective anodization electrode. The dependence of the size of the oxidized titanium line on the various parameters is investigated. Theformed oxidized titanium line has resistivity of 2 x 10⁴ohm cm, which is a value seven orders of magnitude higherthan that of the deposited Ti layer. The oxidized Ti line is used in the planar type metal-insulator-metal [MIM] diode, and works as an energy barrier for the electron. The energy barrier height of the oxidized Ti line is found tobe δEg — 0.2h eV.

Original language	English
Pages (from-to)	1387-1390
Number of pages	4
Journal	Japanese journal of applied physics
Volume	34
Issue number	2S
DOIs	https://doi.org/10.1143/JJAP.34.1387
Publication status	Published - 1995 Feb
Externally published	Yes

Keywords

AFM
MIM diode
Planar type
Quantum wire
STM
STM process

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/JJAP.34.1387

Cite this

@article{6235bdadcae84c2a8466ca75007e4252,

title = "Application of stm nanometer-size oxidation process to planar-type mim diode",

abstract = "Ultra fine oxidized titanium (Ti) lines 18 nm wide and 3 nm high have been formed on the surface of a 4 nm Ti layer on a SiC2/Si substrate using the scanning tunneling microscope [STM] tip as a selective anodization electrode. The dependence of the size of the oxidized titanium line on the various parameters is investigated. Theformed oxidized titanium line has resistivity of 2 x 104ohm cm, which is a value seven orders of magnitude higherthan that of the deposited Ti layer. The oxidized Ti line is used in the planar type metal-insulator-metal [MIM] diode, and works as an energy barrier for the electron. The energy barrier height of the oxidized Ti line is found tobe δEg — 0.2h eV.",

keywords = "AFM, MIM diode, Planar type, Quantum wire, STM, STM process",

author = "Kazuhiko Matsumoto and Shu Takahashi and Masami Ishii and Masakatsu Hoshi and Akira Kurokawa and Shingo Ichimura and Atsushi Ando",

year = "1995",

month = feb,

doi = "10.1143/JJAP.34.1387",

language = "English",

volume = "34",

pages = "1387--1390",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "2S",

}

TY - JOUR

T1 - Application of stm nanometer-size oxidation process to planar-type mim diode

AU - Matsumoto, Kazuhiko

AU - Takahashi, Shu

AU - Ishii, Masami

AU - Hoshi, Masakatsu

AU - Kurokawa, Akira

AU - Ichimura, Shingo

AU - Ando, Atsushi

PY - 1995/2

Y1 - 1995/2

N2 - Ultra fine oxidized titanium (Ti) lines 18 nm wide and 3 nm high have been formed on the surface of a 4 nm Ti layer on a SiC2/Si substrate using the scanning tunneling microscope [STM] tip as a selective anodization electrode. The dependence of the size of the oxidized titanium line on the various parameters is investigated. Theformed oxidized titanium line has resistivity of 2 x 104ohm cm, which is a value seven orders of magnitude higherthan that of the deposited Ti layer. The oxidized Ti line is used in the planar type metal-insulator-metal [MIM] diode, and works as an energy barrier for the electron. The energy barrier height of the oxidized Ti line is found tobe δEg — 0.2h eV.

AB - Ultra fine oxidized titanium (Ti) lines 18 nm wide and 3 nm high have been formed on the surface of a 4 nm Ti layer on a SiC2/Si substrate using the scanning tunneling microscope [STM] tip as a selective anodization electrode. The dependence of the size of the oxidized titanium line on the various parameters is investigated. Theformed oxidized titanium line has resistivity of 2 x 104ohm cm, which is a value seven orders of magnitude higherthan that of the deposited Ti layer. The oxidized Ti line is used in the planar type metal-insulator-metal [MIM] diode, and works as an energy barrier for the electron. The energy barrier height of the oxidized Ti line is found tobe δEg — 0.2h eV.

KW - AFM

KW - MIM diode

KW - Planar type

KW - Quantum wire

KW - STM

KW - STM process

UR - http://www.scopus.com/inward/record.url?scp=0029252270&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029252270&partnerID=8YFLogxK

U2 - 10.1143/JJAP.34.1387

DO - 10.1143/JJAP.34.1387

M3 - Article

AN - SCOPUS:0029252270

VL - 34

SP - 1387

EP - 1390

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 2S

ER -

Application of stm nanometer-size oxidation process to planar-type mim diode

Abstract

Keywords

ASJC Scopus subject areas

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