Application of stm nanometer-size oxidation process to planar-type mim diode

Kazuhiko Matsumoto, Shu Takahashi, Masami Ishii, Masakatsu Hoshi, Akira Kurokawa, Shingo Ichimura, Atsushi Ando

Research output: Contribution to journalArticle

104 Citations (Scopus)

Abstract

Ultra fine oxidized titanium (Ti) lines 18 nm wide and 3 nm high have been formed on the surface of a 4 nm Ti layer on a SiC2/Si substrate using the scanning tunneling microscope [STM] tip as a selective anodization electrode. The dependence of the size of the oxidized titanium line on the various parameters is investigated. Theformed oxidized titanium line has resistivity of 2 x 104ohm cm, which is a value seven orders of magnitude higherthan that of the deposited Ti layer. The oxidized Ti line is used in the planar type metal-insulator-metal [MIM] diode, and works as an energy barrier for the electron. The energy barrier height of the oxidized Ti line is found tobe δEg — 0.2h eV.

Original languageEnglish
Pages (from-to)1387-1390
Number of pages4
JournalJapanese Journal of Applied Physics
Volume34
Issue number2S
DOIs
Publication statusPublished - 1995 Jan 1
Externally publishedYes

Fingerprint

Diodes
titanium
Titanium
diodes
Oxidation
oxidation
Energy barriers
MIM diodes
Metals
Microscopes
microscopes
Scanning
Electrodes
electrical resistivity
scanning
electrodes
energy
Electrons
Substrates
electrons

Keywords

  • AFM
  • MIM diode
  • Planar type
  • Quantum wire
  • STM
  • STM process

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Matsumoto, K., Takahashi, S., Ishii, M., Hoshi, M., Kurokawa, A., Ichimura, S., & Ando, A. (1995). Application of stm nanometer-size oxidation process to planar-type mim diode. Japanese Journal of Applied Physics, 34(2S), 1387-1390. https://doi.org/10.1143/JJAP.34.1387

Application of stm nanometer-size oxidation process to planar-type mim diode. / Matsumoto, Kazuhiko; Takahashi, Shu; Ishii, Masami; Hoshi, Masakatsu; Kurokawa, Akira; Ichimura, Shingo; Ando, Atsushi.

In: Japanese Journal of Applied Physics, Vol. 34, No. 2S, 01.01.1995, p. 1387-1390.

Research output: Contribution to journalArticle

Matsumoto, K, Takahashi, S, Ishii, M, Hoshi, M, Kurokawa, A, Ichimura, S & Ando, A 1995, 'Application of stm nanometer-size oxidation process to planar-type mim diode', Japanese Journal of Applied Physics, vol. 34, no. 2S, pp. 1387-1390. https://doi.org/10.1143/JJAP.34.1387
Matsumoto, Kazuhiko ; Takahashi, Shu ; Ishii, Masami ; Hoshi, Masakatsu ; Kurokawa, Akira ; Ichimura, Shingo ; Ando, Atsushi. / Application of stm nanometer-size oxidation process to planar-type mim diode. In: Japanese Journal of Applied Physics. 1995 ; Vol. 34, No. 2S. pp. 1387-1390.
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