Application of UV-light excited ozone to large-sized si wafer at low temperature

Naoto Kameda, Shigeru Saito, Tetsuya Nishiguchi, Yoshiki Morikawa, Mitsuru Kekura, Hidehiko Nonaka, Shingo Ichimura

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We have oxidized Si wafer at lower than 200°C using an electronically excited oxygen atom that is generated by the irradiation of UV light to low pressure highly concentrated ozone gas. We used high-pressure mercury lamp, as the light source because it has a strong emission between 210 nm and 300 nm by which ozone is effectively absorbed and photo-excited. SiO2 film formation with its thickness fluctuation of less than 0.2 nm within light-irradiated area has been easily achieved as long as the intensity of the light irradiated to low-pressure ozone is uniform within 10 percent. The SiO2 film thickness is 3.3-4.1 nm at 200°C for 10 min on the 8*Si(100) wafer. By the sample rotation during oxidation process, we could oxidize the SiO2 film homogeneously on the 8" wafer. This film can be applied to a buffer layer between deposited film and poly-Si substrate of the gate dielectric film of the low temperature poly-Si thin film transistor.

Original languageEnglish
Pages (from-to)228-231
Number of pages4
JournalJournal of the Vacuum Society of Japan
Volume51
Issue number3
DOIs
Publication statusPublished - 2008 Jan 1
Externally publishedYes

Fingerprint

Ozone
Ultraviolet radiation
ozone
wafers
Polysilicon
Mercury vapor lamps
Temperature
low pressure
Dielectric films
Gate dielectrics
Thin film transistors
Buffer layers
mercury lamps
Film thickness
Light sources
Gases
Irradiation
Oxygen
oxygen atoms
light sources

ASJC Scopus subject areas

  • Materials Science(all)
  • Instrumentation
  • Surfaces and Interfaces
  • Spectroscopy

Cite this

Application of UV-light excited ozone to large-sized si wafer at low temperature. / Kameda, Naoto; Saito, Shigeru; Nishiguchi, Tetsuya; Morikawa, Yoshiki; Kekura, Mitsuru; Nonaka, Hidehiko; Ichimura, Shingo.

In: Journal of the Vacuum Society of Japan, Vol. 51, No. 3, 01.01.2008, p. 228-231.

Research output: Contribution to journalArticle

Kameda, Naoto ; Saito, Shigeru ; Nishiguchi, Tetsuya ; Morikawa, Yoshiki ; Kekura, Mitsuru ; Nonaka, Hidehiko ; Ichimura, Shingo. / Application of UV-light excited ozone to large-sized si wafer at low temperature. In: Journal of the Vacuum Society of Japan. 2008 ; Vol. 51, No. 3. pp. 228-231.
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AU - Nonaka, Hidehiko

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