Ar implantation-induced quantum dot intermixing technique for 1550 nm-band highly stacked QD photonic integrated circuit

A. Matsumoto, Y. Takei, K. Akahane, S. Matsui, T. Umezawa, N. Yamamoto, Y. Matsushima, K. Utaka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We studied an Ar-implantation-induced quantum dot intermixing (QDI) technique and its physical mechanism, and demonstrate an almost equal performance of the QDI used 120 nm shifted laser diode compared to the performance without the technique.

Original languageEnglish
Title of host publication2016 Conference on Lasers and Electro-Optics, CLEO 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781943580118
DOIs
Publication statusPublished - 2016 Dec 16
Event2016 Conference on Lasers and Electro-Optics, CLEO 2016 - San Jose, United States
Duration: 2016 Jun 52016 Jun 10

Publication series

Name2016 Conference on Lasers and Electro-Optics, CLEO 2016

Other

Other2016 Conference on Lasers and Electro-Optics, CLEO 2016
CountryUnited States
CitySan Jose
Period16/6/516/6/10

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Matsumoto, A., Takei, Y., Akahane, K., Matsui, S., Umezawa, T., Yamamoto, N., Matsushima, Y., & Utaka, K. (2016). Ar implantation-induced quantum dot intermixing technique for 1550 nm-band highly stacked QD photonic integrated circuit. In 2016 Conference on Lasers and Electro-Optics, CLEO 2016 [7788806] (2016 Conference on Lasers and Electro-Optics, CLEO 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1364/cleo_si.2016.sm4r.5