Ar implantation-induced quantum dot intermixing technique for 1550 nm-band highly stacked QD photonic integrated circuit

A. Matsumoto, Y. Takei, K. Akahane, S. Matsui, T. Umezawa, N. Yamamoto, Yuichi Matsushima, Katsuyuki Utaka

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)

    Abstract

    We studied an Ar-implantation-induced quantum dot intermixing (QDI) technique and its physical mechanism, and demonstrate an almost equal performance of the QDI used 120 nm shifted laser diode compared to the performance without the technique.

    Original languageEnglish
    Title of host publication2016 Conference on Lasers and Electro-Optics, CLEO 2016
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    ISBN (Electronic)9781943580118
    Publication statusPublished - 2016 Dec 16
    Event2016 Conference on Lasers and Electro-Optics, CLEO 2016 - San Jose, United States
    Duration: 2016 Jun 52016 Jun 10

    Other

    Other2016 Conference on Lasers and Electro-Optics, CLEO 2016
    CountryUnited States
    CitySan Jose
    Period16/6/516/6/10

    Fingerprint

    Photonics
    Semiconductor quantum dots
    integrated circuits
    Integrated circuits
    implantation
    quantum dots
    photonics
    Semiconductor lasers
    semiconductor lasers

    ASJC Scopus subject areas

    • Atomic and Molecular Physics, and Optics
    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

    Cite this

    Matsumoto, A., Takei, Y., Akahane, K., Matsui, S., Umezawa, T., Yamamoto, N., ... Utaka, K. (2016). Ar implantation-induced quantum dot intermixing technique for 1550 nm-band highly stacked QD photonic integrated circuit. In 2016 Conference on Lasers and Electro-Optics, CLEO 2016 [7788806] Institute of Electrical and Electronics Engineers Inc..

    Ar implantation-induced quantum dot intermixing technique for 1550 nm-band highly stacked QD photonic integrated circuit. / Matsumoto, A.; Takei, Y.; Akahane, K.; Matsui, S.; Umezawa, T.; Yamamoto, N.; Matsushima, Yuichi; Utaka, Katsuyuki.

    2016 Conference on Lasers and Electro-Optics, CLEO 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7788806.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Matsumoto, A, Takei, Y, Akahane, K, Matsui, S, Umezawa, T, Yamamoto, N, Matsushima, Y & Utaka, K 2016, Ar implantation-induced quantum dot intermixing technique for 1550 nm-band highly stacked QD photonic integrated circuit. in 2016 Conference on Lasers and Electro-Optics, CLEO 2016., 7788806, Institute of Electrical and Electronics Engineers Inc., 2016 Conference on Lasers and Electro-Optics, CLEO 2016, San Jose, United States, 16/6/5.
    Matsumoto A, Takei Y, Akahane K, Matsui S, Umezawa T, Yamamoto N et al. Ar implantation-induced quantum dot intermixing technique for 1550 nm-band highly stacked QD photonic integrated circuit. In 2016 Conference on Lasers and Electro-Optics, CLEO 2016. Institute of Electrical and Electronics Engineers Inc. 2016. 7788806
    Matsumoto, A. ; Takei, Y. ; Akahane, K. ; Matsui, S. ; Umezawa, T. ; Yamamoto, N. ; Matsushima, Yuichi ; Utaka, Katsuyuki. / Ar implantation-induced quantum dot intermixing technique for 1550 nm-band highly stacked QD photonic integrated circuit. 2016 Conference on Lasers and Electro-Optics, CLEO 2016. Institute of Electrical and Electronics Engineers Inc., 2016.
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    abstract = "We studied an Ar-implantation-induced quantum dot intermixing (QDI) technique and its physical mechanism, and demonstrate an almost equal performance of the QDI used 120 nm shifted laser diode compared to the performance without the technique.",
    author = "A. Matsumoto and Y. Takei and K. Akahane and S. Matsui and T. Umezawa and N. Yamamoto and Yuichi Matsushima and Katsuyuki Utaka",
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    AU - Matsumoto, A.

    AU - Takei, Y.

    AU - Akahane, K.

    AU - Matsui, S.

    AU - Umezawa, T.

    AU - Yamamoto, N.

    AU - Matsushima, Yuichi

    AU - Utaka, Katsuyuki

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