Ar Implantation-Induced Quantum Dot Intermixing Technique for 1550 nm-Band Highly Stacked QD Photonic Integrated Circuit

A. Matsumoto; Y. Takei; K. Akahane; S. Matsui; T. Umezawa; N. Yamamoto; Y. Matsushima; K. Utaka

Ar Implantation-Induced Quantum Dot Intermixing Technique for 1550 nm-Band Highly Stacked QD Photonic Integrated Circuit

A. Matsumoto^*, Y. Takei, K. Akahane, S. Matsui, T. Umezawa, N. Yamamoto, Y. Matsushima, K. Utaka

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We studied an Ar-implantation-induced quantum dot intermixing (QDI) technique and its physical mechanism, and demonstrate an almost equal performance of the QDI used 120 nm shifted laser diode compared to the performance without the technique.

Original language	English
Title of host publication	CLEO
Subtitle of host publication	Science and Innovations, SI 2016
Publisher	Optica Publishing Group (formerly OSA)
ISBN (Electronic)	9781557528209
Publication status	Published - 2016
Event	CLEO: Science and Innovations, SI 2016 - San Jose, United States Duration: 2016 Jun 5 → 2016 Jun 10

Publication series

Name	Optics InfoBase Conference Papers

Conference

Conference	CLEO: Science and Innovations, SI 2016
Country/Territory	United States
City	San Jose
Period	16/6/5 → 16/6/10

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Mechanics of Materials

Cite this

Ar Implantation-Induced Quantum Dot Intermixing Technique for 1550 nm-Band Highly Stacked QD Photonic Integrated Circuit. / Matsumoto, A.; Takei, Y.; Akahane, K. et al.

CLEO: Science and Innovations, SI 2016. Optica Publishing Group (formerly OSA), 2016. SM4R.5 (Optics InfoBase Conference Papers).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Matsumoto, A, Takei, Y, Akahane, K, Matsui, S, Umezawa, T, Yamamoto, N, Matsushima, Y & Utaka, K 2016, Ar Implantation-Induced Quantum Dot Intermixing Technique for 1550 nm-Band Highly Stacked QD Photonic Integrated Circuit. in CLEO: Science and Innovations, SI 2016., SM4R.5, Optics InfoBase Conference Papers, Optica Publishing Group (formerly OSA), CLEO: Science and Innovations, SI 2016, San Jose, United States, 16/6/5.

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abstract = "We studied an Ar-implantation-induced quantum dot intermixing (QDI) technique and its physical mechanism, and demonstrate an almost equal performance of the QDI used 120 nm shifted laser diode compared to the performance without the technique.",

author = "A. Matsumoto and Y. Takei and K. Akahane and S. Matsui and T. Umezawa and N. Yamamoto and Y. Matsushima and K. Utaka",

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AU - Matsumoto, A.

AU - Takei, Y.

AU - Akahane, K.

AU - Matsui, S.

AU - Umezawa, T.

AU - Yamamoto, N.

AU - Matsushima, Y.

AU - Utaka, K.

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PY - 2016

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AB - We studied an Ar-implantation-induced quantum dot intermixing (QDI) technique and its physical mechanism, and demonstrate an almost equal performance of the QDI used 120 nm shifted laser diode compared to the performance without the technique.

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M3 - Conference contribution

AN - SCOPUS:85136581819

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PB - Optica Publishing Group (formerly OSA)

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Ar Implantation-Induced Quantum Dot Intermixing Technique for 1550 nm-Band Highly Stacked QD Photonic Integrated Circuit

Abstract

Publication series

Conference

ASJC Scopus subject areas

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