Area-selective epitaxy of GaAs by migration-enhanced epitaxy with As2 and As4 arsenic sources

A. Kawaharazuka, I. Yoshiba, Y. Horikoshi

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We demonstrate area-selective epitaxy by migration-enhanced epitaxy with As2 and As4 as arsenic sources. The distinct whisker structure growing in [1 1 1]B direction is obtained when employing As2 as an arsenic source, while (1 1 1)B facet is formed with As4. The difference in the facet formation can be explained by the formation of As-trimer, which significantly reduces the growth rate of the (1 1 1)B surface. With As2, area-selective epitaxy can be achieved at lower arsenic pressure condition, where less As-trimers are formed. Therefore, growth in the [1 1 1]B direction is enhanced.

Original languageEnglish
Pages (from-to)737-739
Number of pages3
JournalApplied Surface Science
Volume255
Issue number3
DOIs
Publication statusPublished - 2008 Nov 30

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Arsenic
Epitaxial growth
gallium arsenide
Direction compound

Keywords

  • Area-selective epitaxy
  • As
  • As
  • GaAs
  • Molecular beam epitaxy

ASJC Scopus subject areas

  • Surfaces, Coatings and Films

Cite this

Area-selective epitaxy of GaAs by migration-enhanced epitaxy with As2 and As4 arsenic sources. / Kawaharazuka, A.; Yoshiba, I.; Horikoshi, Y.

In: Applied Surface Science, Vol. 255, No. 3, 30.11.2008, p. 737-739.

Research output: Contribution to journalArticle

Kawaharazuka, A. ; Yoshiba, I. ; Horikoshi, Y. / Area-selective epitaxy of GaAs by migration-enhanced epitaxy with As2 and As4 arsenic sources. In: Applied Surface Science. 2008 ; Vol. 255, No. 3. pp. 737-739.
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