Area selective formation of magnetic nanodot arrays on Si wafer by electroless deposition

J. Kawaji, F. Kitaizumi, H. Oikawa, D. Niwa, Takayuki Homma, Tetsuya Osaka

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Abstract

Electroless deposition process for fabricating magnetic dot arrays was studied. A patterned Si substrate with a SiO2 resist was produced by processes combined with electron-beam lithography and reactive ion etching. By immersing the patterned Si substrate into a CoNiP electroless deposition bath, CoNiP was deposited only into the patterned pores, demonstrating a satisfactory area selectivity of the deposition. Excellent uniformity on the CoNiP deposition into the patterned pores with diameter less than 100 nm and high aspect ratio (> 5) was achieved by applying chemical activation processes using a Pd solution prior to the deposition. The CoNiP dot arrays exhibited higher perpendicular squareness ratio than that of CoNiP continuous film and showed a clear magnetization state at DC-magnetized state, which originated from the shape anisotropy caused by high aspect ratio of the dot patterns.

Original languageEnglish
Pages (from-to)245-249
Number of pages5
JournalJournal of Magnetism and Magnetic Materials
Volume287
Issue numberSPEC. ISS.
DOIs
Publication statusPublished - 2005 Feb

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Keywords

  • Area selective formation
  • CoNiP alloys
  • Electroless deposition
  • Patterned media
  • Pd activation process

ASJC Scopus subject areas

  • Condensed Matter Physics

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