TY - JOUR
T1 - Area selective formation of magnetic nanodot arrays on Si wafer by electroless deposition
AU - Kawaji, J.
AU - Kitaizumi, F.
AU - Oikawa, H.
AU - Niwa, D.
AU - Homma, T.
AU - Osaka, T.
N1 - Funding Information:
This work was carried out at the “Center for Practical Nano Chemistry” in the 21C-COE Programme, the Ministry of Education, Culture, Sports, Science and Technology, Japan (MEXT). The work was financially supported by grants-in-aid of the Special Coordination Funds for Promoting Science and Technology “Creation of Novel Magnetic Recording Materials Using Nano Interface Technology”, and that of the Center of Excellence Research on “Molecular Nano Engineering” from MEXT. The authors express their gratitude to K. Ueno, NEC Corporation and to A. Kimoto and H. Shinbori, Tokyo Ohka Kogyo Co. Ltd., for supplying the patterned substrates. The authors also express their gratitude to T. Onoue, N. Takano and Y. Akiyama, for their contribution to the experiment in Waseda University. J. Kawaji acknowledges a research fellowship from the Japan Society for the Promotion of Science.
PY - 2005/2
Y1 - 2005/2
N2 - Electroless deposition process for fabricating magnetic dot arrays was studied. A patterned Si substrate with a SiO2 resist was produced by processes combined with electron-beam lithography and reactive ion etching. By immersing the patterned Si substrate into a CoNiP electroless deposition bath, CoNiP was deposited only into the patterned pores, demonstrating a satisfactory area selectivity of the deposition. Excellent uniformity on the CoNiP deposition into the patterned pores with diameter less than 100 nm and high aspect ratio (> 5) was achieved by applying chemical activation processes using a Pd solution prior to the deposition. The CoNiP dot arrays exhibited higher perpendicular squareness ratio than that of CoNiP continuous film and showed a clear magnetization state at DC-magnetized state, which originated from the shape anisotropy caused by high aspect ratio of the dot patterns.
AB - Electroless deposition process for fabricating magnetic dot arrays was studied. A patterned Si substrate with a SiO2 resist was produced by processes combined with electron-beam lithography and reactive ion etching. By immersing the patterned Si substrate into a CoNiP electroless deposition bath, CoNiP was deposited only into the patterned pores, demonstrating a satisfactory area selectivity of the deposition. Excellent uniformity on the CoNiP deposition into the patterned pores with diameter less than 100 nm and high aspect ratio (> 5) was achieved by applying chemical activation processes using a Pd solution prior to the deposition. The CoNiP dot arrays exhibited higher perpendicular squareness ratio than that of CoNiP continuous film and showed a clear magnetization state at DC-magnetized state, which originated from the shape anisotropy caused by high aspect ratio of the dot patterns.
KW - Area selective formation
KW - CoNiP alloys
KW - Electroless deposition
KW - Patterned media
KW - Pd activation process
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U2 - 10.1016/j.jmmm.2004.10.040
DO - 10.1016/j.jmmm.2004.10.040
M3 - Article
AN - SCOPUS:12344284889
VL - 287
SP - 245
EP - 249
JO - Journal of Magnetism and Magnetic Materials
JF - Journal of Magnetism and Magnetic Materials
SN - 0304-8853
IS - SPEC. ISS.
ER -