Array architecture of floating body cell (FBC) with quasi-shielded open bit line scheme for sub-40nm node

Katsuyuki Fujita, Takashi Ohsawa, Ryo Fukuda, Fumiyoshi Matsuoka, Tomoki Higashi, Tomoaki Shino, Yohji Watanabe

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

Cell array architecture for floating body RAM of 35nm bit line half pitch is described. The quasi-non-destructive-read-out feature of floating body cell contributes to eliminating inter-bit line coupling noise in open bit line architecture without degrading the cycle time of the RAM.

Original languageEnglish
Title of host publication2008 IEEE International SOI Conference Proceedings
Pages31-32
Number of pages2
DOIs
Publication statusPublished - 2008 Dec 24
Externally publishedYes
Event2008 IEEE International SOI Conference - New Paltz, NY, United States
Duration: 2008 Oct 62008 Oct 9

Publication series

NameProceedings - IEEE International SOI Conference
ISSN (Print)1078-621X

Other

Other2008 IEEE International SOI Conference
CountryUnited States
CityNew Paltz, NY
Period08/10/608/10/9

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Fujita, K., Ohsawa, T., Fukuda, R., Matsuoka, F., Higashi, T., Shino, T., & Watanabe, Y. (2008). Array architecture of floating body cell (FBC) with quasi-shielded open bit line scheme for sub-40nm node. In 2008 IEEE International SOI Conference Proceedings (pp. 31-32). [4656280] (Proceedings - IEEE International SOI Conference). https://doi.org/10.1109/SOI.2008.4656280