Array of bright silicon-vacancy centers in diamond fabricated by low-energy focused ion beam implantation

Syuto Tamura, Godai Koike, Akira Komatsubara, Tokuyuki Teraji, Shinobu Onoda, Liam P. McGuinness, Lachlan Rogers, Boris Naydenov, E. Wu, Liu Yan, Fedor Jelezko, Takeshi Ohshima, Junichi Isoya, Takahiro Shinada, Takashi Tanii

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41 Citations (Scopus)

Abstract

Among promising color centers for single-photon sources in diamond, the negatively charged silicon-vacancy (SiV%) has 70% of its emission to the zero-phonon line (ZPL), in contrast to the negatively charged nitrogen vacancy (NV-), which has a broad spectrum. Fabricating single centers of useful defect complexes with high yield and excellent grown-in defect properties by ion implantation has proven to be challenging. We have fabricated bright single SiV- centers by 60-keV focused ion beam implantation and subsequent annealing at 1000 °C with high positioning accuracy and a high yield of 15%.

Original languageEnglish
Number of pages1
JournalApplied Physics Express
Volume7
Issue number11
DOIs
Publication statusPublished - 2014 Nov 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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    Tamura, S., Koike, G., Komatsubara, A., Teraji, T., Onoda, S., McGuinness, L. P., Rogers, L., Naydenov, B., Wu, E., Yan, L., Jelezko, F., Ohshima, T., Isoya, J., Shinada, T., & Tanii, T. (2014). Array of bright silicon-vacancy centers in diamond fabricated by low-energy focused ion beam implantation. Applied Physics Express, 7(11). https://doi.org/10.7567/APEX.7.115201