Array of bright silicon-vacancy centers in diamond fabricated by low-energy focused ion beam implantation

Syuto Tamura, Godai Koike, Akira Komatsubara, Tokuyuki Teraji, Shinobu Onoda, Liam P. McGuinness, Lachlan Rogers, Boris Naydenov, E. Wu, Liu Yan, Fedor Jelezko, Takeshi Ohshima, Junichi Isoya, Takahiro Shinada, Takashi Tanii

    Research output: Contribution to journalArticle

    37 Citations (Scopus)

    Abstract

    Among promising color centers for single-photon sources in diamond, the negatively charged silicon-vacancy (SiV%) has 70% of its emission to the zero-phonon line (ZPL), in contrast to the negatively charged nitrogen vacancy (NV-), which has a broad spectrum. Fabricating single centers of useful defect complexes with high yield and excellent grown-in defect properties by ion implantation has proven to be challenging. We have fabricated bright single SiV- centers by 60-keV focused ion beam implantation and subsequent annealing at 1000 °C with high positioning accuracy and a high yield of 15%.

    Original languageEnglish
    Pages (from-to)115201
    Number of pages1
    JournalApplied Physics Express
    Volume7
    Issue number11
    DOIs
    Publication statusPublished - 2014 Nov 1

    Fingerprint

    Focused ion beams
    Vacancies
    Diamonds
    implantation
    diamonds
    ion beams
    Color centers
    Silicon
    Defects
    defects
    silicon
    color centers
    Ion implantation
    positioning
    ion implantation
    Photons
    Annealing
    Nitrogen
    nitrogen
    annealing

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

    Cite this

    Array of bright silicon-vacancy centers in diamond fabricated by low-energy focused ion beam implantation. / Tamura, Syuto; Koike, Godai; Komatsubara, Akira; Teraji, Tokuyuki; Onoda, Shinobu; McGuinness, Liam P.; Rogers, Lachlan; Naydenov, Boris; Wu, E.; Yan, Liu; Jelezko, Fedor; Ohshima, Takeshi; Isoya, Junichi; Shinada, Takahiro; Tanii, Takashi.

    In: Applied Physics Express, Vol. 7, No. 11, 01.11.2014, p. 115201.

    Research output: Contribution to journalArticle

    Tamura, S, Koike, G, Komatsubara, A, Teraji, T, Onoda, S, McGuinness, LP, Rogers, L, Naydenov, B, Wu, E, Yan, L, Jelezko, F, Ohshima, T, Isoya, J, Shinada, T & Tanii, T 2014, 'Array of bright silicon-vacancy centers in diamond fabricated by low-energy focused ion beam implantation', Applied Physics Express, vol. 7, no. 11, pp. 115201. https://doi.org/10.7567/APEX.7.115201
    Tamura, Syuto ; Koike, Godai ; Komatsubara, Akira ; Teraji, Tokuyuki ; Onoda, Shinobu ; McGuinness, Liam P. ; Rogers, Lachlan ; Naydenov, Boris ; Wu, E. ; Yan, Liu ; Jelezko, Fedor ; Ohshima, Takeshi ; Isoya, Junichi ; Shinada, Takahiro ; Tanii, Takashi. / Array of bright silicon-vacancy centers in diamond fabricated by low-energy focused ion beam implantation. In: Applied Physics Express. 2014 ; Vol. 7, No. 11. pp. 115201.
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    AU - Onoda, Shinobu

    AU - McGuinness, Liam P.

    AU - Rogers, Lachlan

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