Atom probe study of erbium and oxygen co-implanted silicon

Yasuo Shimizu, Yuan Tu, Ayman Abdelghafar, Maasa Yano, Yudai Suzuki, Takashi Tanii, Takahiro Shinada, Enrico Prati, Michele Celebrano, Marco Finazzi, Lavinia Ghirardini, Koji Inoue, Yasuyoshi Nagai

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    2 Citations (Scopus)

    Abstract

    It has been reported that erbium (Er) is a source of optical emission at λ=1.54 pm due to 4I13/24I15/2 transition of Er3+. A method of oxygen (O) codoping with Er has attracted attention as a candidate for obtaining more efficient optical gain by forming Er:O complex. Although several simulations predict the equilibrium structure of Er:O complex, it is difficult to understand experimentally how related between these implanted ions followed by annealing for optical activation. In this workshop, we reported the preliminary results on three-dimensional distributions of Er and O co-implanted into Si investigated by atom probe tomography.

    Original languageEnglish
    Title of host publication2017 Silicon Nanoelectronics Workshop, SNW 2017
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Pages99-100
    Number of pages2
    Volume2017-January
    ISBN (Electronic)9784863486478
    DOIs
    Publication statusPublished - 2017 Dec 29
    Event22nd Silicon Nanoelectronics Workshop, SNW 2017 - Kyoto, Japan
    Duration: 2017 Jun 42017 Jun 5

    Other

    Other22nd Silicon Nanoelectronics Workshop, SNW 2017
    CountryJapan
    CityKyoto
    Period17/6/417/6/5

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials

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  • Cite this

    Shimizu, Y., Tu, Y., Abdelghafar, A., Yano, M., Suzuki, Y., Tanii, T., Shinada, T., Prati, E., Celebrano, M., Finazzi, M., Ghirardini, L., Inoue, K., & Nagai, Y. (2017). Atom probe study of erbium and oxygen co-implanted silicon. In 2017 Silicon Nanoelectronics Workshop, SNW 2017 (Vol. 2017-January, pp. 99-100). [8242316] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/SNW.2017.8242316