Atom probe tomographic assessment of the distribution of germanium atoms implanted in a silicon matrix through nano-apertures

Y. Tu, B. Han, Y. Shimizu, K. Inoue, Y. Fukui, M. Yano, Takashi Tanii, T. Shinada, Y. Nagai

    Research output: Contribution to journalArticle

    Abstract

    Ion implantation through nanometer-scale apertures (nano-apertures) is a promising method to precisely position ions in silicon matrices, which is a requirement for next generation electronic and quantum computing devices. This paper reports the application of atom probe tomography (APT) to investigate the three-dimensional distribution of germanium atoms in silicon after implantation through nano-aperture of 10 nm in diameter, for evaluation of the amount and spatial distribution of implanted dopants. The experimental results obtained by APT are consistent with a simple simulation with consideration of several effects during lithography and ion implantation, such as channeling and resist flow.

    Original languageEnglish
    Article number385301
    JournalNanotechnology
    Volume28
    Issue number38
    DOIs
    Publication statusPublished - 2017 Aug 31

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    Keywords

    • Atom probe tomography
    • ion implantation
    • nano-aperture
    • silicon

    ASJC Scopus subject areas

    • Bioengineering
    • Chemistry(all)
    • Materials Science(all)
    • Mechanics of Materials
    • Mechanical Engineering
    • Electrical and Electronic Engineering

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