Atom probe tomographic assessment of the distribution of germanium atoms implanted in a silicon matrix through nano-apertures

Y. Tu, B. Han, Y. Shimizu, K. Inoue, Y. Fukui, M. Yano, Takashi Tanii, T. Shinada, Y. Nagai

    Research output: Contribution to journalArticle

    Abstract

    Ion implantation through nanometer-scale apertures (nano-apertures) is a promising method to precisely position ions in silicon matrices, which is a requirement for next generation electronic and quantum computing devices. This paper reports the application of atom probe tomography (APT) to investigate the three-dimensional distribution of germanium atoms in silicon after implantation through nano-aperture of 10 nm in diameter, for evaluation of the amount and spatial distribution of implanted dopants. The experimental results obtained by APT are consistent with a simple simulation with consideration of several effects during lithography and ion implantation, such as channeling and resist flow.

    Original languageEnglish
    Article number385301
    JournalNanotechnology
    Volume28
    Issue number38
    DOIs
    Publication statusPublished - 2017 Aug 31

    Fingerprint

    Germanium
    Silicon
    Ion implantation
    Atoms
    Tomography
    Lithography
    Spatial distribution
    Doping (additives)
    Ions

    Keywords

    • Atom probe tomography
    • ion implantation
    • nano-aperture
    • silicon

    ASJC Scopus subject areas

    • Bioengineering
    • Chemistry(all)
    • Materials Science(all)
    • Mechanics of Materials
    • Mechanical Engineering
    • Electrical and Electronic Engineering

    Cite this

    Atom probe tomographic assessment of the distribution of germanium atoms implanted in a silicon matrix through nano-apertures. / Tu, Y.; Han, B.; Shimizu, Y.; Inoue, K.; Fukui, Y.; Yano, M.; Tanii, Takashi; Shinada, T.; Nagai, Y.

    In: Nanotechnology, Vol. 28, No. 38, 385301, 31.08.2017.

    Research output: Contribution to journalArticle

    Tu, Y. ; Han, B. ; Shimizu, Y. ; Inoue, K. ; Fukui, Y. ; Yano, M. ; Tanii, Takashi ; Shinada, T. ; Nagai, Y. / Atom probe tomographic assessment of the distribution of germanium atoms implanted in a silicon matrix through nano-apertures. In: Nanotechnology. 2017 ; Vol. 28, No. 38.
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    AU - Fukui, Y.

    AU - Yano, M.

    AU - Tanii, Takashi

    AU - Shinada, T.

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