Atom probe tomographic assessment of the distribution of germanium atoms implanted in a silicon matrix through nano-apertures

Y. Tu, B. Han, Y. Shimizu, K. Inoue, Y. Fukui, M. Yano, T. Tanii, T. Shinada, Y. Nagai

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Ion implantation through nanometer-scale apertures (nano-apertures) is a promising method to precisely position ions in silicon matrices, which is a requirement for next generation electronic and quantum computing devices. This paper reports the application of atom probe tomography (APT) to investigate the three-dimensional distribution of germanium atoms in silicon after implantation through nano-aperture of 10 nm in diameter, for evaluation of the amount and spatial distribution of implanted dopants. The experimental results obtained by APT are consistent with a simple simulation with consideration of several effects during lithography and ion implantation, such as channeling and resist flow.

Original languageEnglish
Article number385301
JournalNanotechnology
Volume28
Issue number38
DOIs
Publication statusPublished - 2017 Aug 31

Keywords

  • Atom probe tomography
  • ion implantation
  • nano-aperture
  • silicon

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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