Atomic and electronic structure of misfit dislocations in GaSb/GaAs(0 0 1)

Nori Miyagishima, Takuya Shinoda, Ken Suzuki, Tadasuke Kaneko, Kyozaburo Takeda, Kenji Shiraishi, Tomonori Ito

    Research output: Contribution to journalArticle

    2 Citations (Scopus)

    Abstract

    We investigated the atomic and electronic structures of the periodic misfit dislocations (MDs) found in GaSb/GaAs (0 0 1). In order to determine the details of these structures, we carried out the first-principle total energy calculations. The characteristic feature in the MDs is the appearance of the anion-anion or cation-cation bond in order to avoid the formation of dangling bonds. As a result, the dislocation core structure form five- and seven-membered rings. These MDs electronically cause the impurity levels in the band gap. The individual MDs have the possibility to form one-dimensional electron- and hole-paths along the dislocation line.

    Original languageEnglish
    Pages (from-to)1009-1012
    Number of pages4
    JournalPhysica B: Condensed Matter
    Volume340-342
    DOIs
    Publication statusPublished - 2003 Dec 31

    Fingerprint

    Crystal atomic structure
    Dislocations (crystals)
    atomic structure
    Electronic structure
    electronic structure
    Anions
    Cations
    Negative ions
    Positive ions
    Dangling bonds
    anions
    cations
    Energy gap
    Impurities
    gallium arsenide
    Electrons
    impurities
    causes
    rings
    electrons

    Keywords

    • First-principle total energy calculations
    • Misfit dislocation
    • Semiconductor heteroepitaxy

    ASJC Scopus subject areas

    • Materials Science(all)
    • Condensed Matter Physics

    Cite this

    Miyagishima, N., Shinoda, T., Suzuki, K., Kaneko, T., Takeda, K., Shiraishi, K., & Ito, T. (2003). Atomic and electronic structure of misfit dislocations in GaSb/GaAs(0 0 1). Physica B: Condensed Matter, 340-342, 1009-1012. https://doi.org/10.1016/j.physb.2003.09.195

    Atomic and electronic structure of misfit dislocations in GaSb/GaAs(0 0 1). / Miyagishima, Nori; Shinoda, Takuya; Suzuki, Ken; Kaneko, Tadasuke; Takeda, Kyozaburo; Shiraishi, Kenji; Ito, Tomonori.

    In: Physica B: Condensed Matter, Vol. 340-342, 31.12.2003, p. 1009-1012.

    Research output: Contribution to journalArticle

    Miyagishima, N, Shinoda, T, Suzuki, K, Kaneko, T, Takeda, K, Shiraishi, K & Ito, T 2003, 'Atomic and electronic structure of misfit dislocations in GaSb/GaAs(0 0 1)', Physica B: Condensed Matter, vol. 340-342, pp. 1009-1012. https://doi.org/10.1016/j.physb.2003.09.195
    Miyagishima, Nori ; Shinoda, Takuya ; Suzuki, Ken ; Kaneko, Tadasuke ; Takeda, Kyozaburo ; Shiraishi, Kenji ; Ito, Tomonori. / Atomic and electronic structure of misfit dislocations in GaSb/GaAs(0 0 1). In: Physica B: Condensed Matter. 2003 ; Vol. 340-342. pp. 1009-1012.
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    AU - Shinoda, Takuya

    AU - Suzuki, Ken

    AU - Kaneko, Tadasuke

    AU - Takeda, Kyozaburo

    AU - Shiraishi, Kenji

    AU - Ito, Tomonori

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