Atomic contribution to valence band density of states in gallium oxide and silicon oxide nano layered films

Toshio Takeuchi, Jiro Nishinaga, Atsushi Kawaharazuka, Yoshiji Horikoshi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

High resolution X-ray photoelectron spectroscopy (XPS) is used to investigate the spectra of nanolayered films. Amorphous gallium oxide (Ga 2O3)-silicon dioxide (SiO2) nanolayered thin films are grown using ultrahigh vacuum radio frequency (rf) magnetron sputtering on sapphire substrates at room temperature. Films are layered with 15-angstrom Ga2O3 oxide and 75-angstrom SiO2 for a total of 10 layers. Referring to atomic core levels, atomic contribution to valence band density of states is experimentally nominated. This analytical technique has particular applicability to the evaluation of the density of states with atomic contributions.

Original languageEnglish
Title of host publicationDefect and Diffusion Forum
Pages849-852
Number of pages4
Volume297-301
DOIs
Publication statusPublished - 2010

Publication series

NameDefect and Diffusion Forum
Volume297-301
ISSN (Print)10120386

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Keywords

  • Gallium oxide
  • High resolution X-ray photoelectron spectroscopy
  • Nanolayered structure
  • Radio frequency magnetron sputtering
  • Valence band density of states

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Radiation

Cite this

Takeuchi, T., Nishinaga, J., Kawaharazuka, A., & Horikoshi, Y. (2010). Atomic contribution to valence band density of states in gallium oxide and silicon oxide nano layered films. In Defect and Diffusion Forum (Vol. 297-301, pp. 849-852). (Defect and Diffusion Forum; Vol. 297-301). https://doi.org/10.4028/www.scientific.net/DDF.297-301.849