Atomic force microscopy observation of layer-by-layer growth of ultrathin silicon dioxide by ozone gas at room temperature

T. Maeda, A. Kurokawa, K. Sakamoto, A. Ando, H. Itoh, S. Ichimura

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)

Abstract

The ozone oxidized surface was assessed via AFM observation. It was found that the step-terrace structure of the clean flat Si (001) is replicated on the surface of the ozone oxides. Conformal oxide layers from 1 monolayer to 1 nm thick with atomic steps and terraces were successfully fabricated. The AFM images of the ozone oxide surface preserved the step and terrace structures.

Original languageEnglish
Pages (from-to)589-592
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume19
Issue number2
DOIs
Publication statusPublished - 2001 Mar 1
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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