Abstract
Complex perovskite oxides offer tremendous potential for controlling their rich variety of electronic properties, including high-TC superconductivity, high-κ ferroelectricity, and quantum magnetism. Atomic-scale control of these intriguing properties in ultrathin perovskites is an important challenge for exploring new physics and device functionality at atomic dimensions. Here, we demonstrate atomic-scale engineering of dielectric responses using two-dimensional (2D) homologous perovskite nanosheets (Ca2Nam-3NbmO3m+1; m = 3-6). In this homologous 2D material, the thickness of the perovskite layers can be incrementally controlled by changing m, and such atomic layer engineering enhances the high-κ dielectric response and local ferroelectric instability. The end member (m = 6) attains a high dielectric constant of ∼70, which is the highest among all known dielectrics in the ultrathin region (<10 nm). These results provide a new strategy for achieving high-κ ferroelectrics for use in ultrascaled high-density capacitors and post-graphene technology.
| Original language | English |
|---|---|
| Pages (from-to) | 10868-10874 |
| Number of pages | 7 |
| Journal | Journal of the American Chemical Society |
| Volume | 139 |
| Issue number | 31 |
| DOIs | |
| Publication status | Published - 2017 Aug 9 |
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ASJC Scopus subject areas
- Catalysis
- Chemistry(all)
- Biochemistry
- Colloid and Surface Chemistry
Cite this
Atomic Layer Engineering of High-κ Ferroelectricity in 2D Perovskites. / Li, Bao Wen; Osada, Minoru; Kim, Yoon Hyun; Ebina, Yasuo; Akatsuka, Kosho; Sasaki, Takayoshi.
In: Journal of the American Chemical Society, Vol. 139, No. 31, 09.08.2017, p. 10868-10874.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Atomic Layer Engineering of High-κ Ferroelectricity in 2D Perovskites
AU - Li, Bao Wen
AU - Osada, Minoru
AU - Kim, Yoon Hyun
AU - Ebina, Yasuo
AU - Akatsuka, Kosho
AU - Sasaki, Takayoshi
PY - 2017/8/9
Y1 - 2017/8/9
N2 - Complex perovskite oxides offer tremendous potential for controlling their rich variety of electronic properties, including high-TC superconductivity, high-κ ferroelectricity, and quantum magnetism. Atomic-scale control of these intriguing properties in ultrathin perovskites is an important challenge for exploring new physics and device functionality at atomic dimensions. Here, we demonstrate atomic-scale engineering of dielectric responses using two-dimensional (2D) homologous perovskite nanosheets (Ca2Nam-3NbmO3m+1; m = 3-6). In this homologous 2D material, the thickness of the perovskite layers can be incrementally controlled by changing m, and such atomic layer engineering enhances the high-κ dielectric response and local ferroelectric instability. The end member (m = 6) attains a high dielectric constant of ∼70, which is the highest among all known dielectrics in the ultrathin region (<10 nm). These results provide a new strategy for achieving high-κ ferroelectrics for use in ultrascaled high-density capacitors and post-graphene technology.
AB - Complex perovskite oxides offer tremendous potential for controlling their rich variety of electronic properties, including high-TC superconductivity, high-κ ferroelectricity, and quantum magnetism. Atomic-scale control of these intriguing properties in ultrathin perovskites is an important challenge for exploring new physics and device functionality at atomic dimensions. Here, we demonstrate atomic-scale engineering of dielectric responses using two-dimensional (2D) homologous perovskite nanosheets (Ca2Nam-3NbmO3m+1; m = 3-6). In this homologous 2D material, the thickness of the perovskite layers can be incrementally controlled by changing m, and such atomic layer engineering enhances the high-κ dielectric response and local ferroelectric instability. The end member (m = 6) attains a high dielectric constant of ∼70, which is the highest among all known dielectrics in the ultrathin region (<10 nm). These results provide a new strategy for achieving high-κ ferroelectrics for use in ultrascaled high-density capacitors and post-graphene technology.
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U2 - 10.1021/jacs.7b05665
DO - 10.1021/jacs.7b05665
M3 - Article
VL - 139
SP - 10868
EP - 10874
JO - Journal of the American Chemical Society
JF - Journal of the American Chemical Society
SN - 0002-7863
IS - 31
ER -