Atomic Layer Engineering of High-κ Ferroelectricity in 2D Perovskites

Bao Wen Li, Minoru Osada, Yoon Hyun Kim, Yasuo Ebina, Kosho Akatsuka, Takayoshi Sasaki

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)


Complex perovskite oxides offer tremendous potential for controlling their rich variety of electronic properties, including high-TC superconductivity, high-κ ferroelectricity, and quantum magnetism. Atomic-scale control of these intriguing properties in ultrathin perovskites is an important challenge for exploring new physics and device functionality at atomic dimensions. Here, we demonstrate atomic-scale engineering of dielectric responses using two-dimensional (2D) homologous perovskite nanosheets (Ca2Nam-3NbmO3m+1; m = 3-6). In this homologous 2D material, the thickness of the perovskite layers can be incrementally controlled by changing m, and such atomic layer engineering enhances the high-κ dielectric response and local ferroelectric instability. The end member (m = 6) attains a high dielectric constant of ∼70, which is the highest among all known dielectrics in the ultrathin region (<10 nm). These results provide a new strategy for achieving high-κ ferroelectrics for use in ultrascaled high-density capacitors and post-graphene technology.

Original languageEnglish
Pages (from-to)10868-10874
Number of pages7
JournalJournal of the American Chemical Society
Issue number31
Publication statusPublished - 2017 Aug 9
Externally publishedYes

ASJC Scopus subject areas

  • Catalysis
  • Chemistry(all)
  • Biochemistry
  • Colloid and Surface Chemistry

Fingerprint Dive into the research topics of 'Atomic Layer Engineering of High-κ Ferroelectricity in 2D Perovskites'. Together they form a unique fingerprint.

Cite this