Atomic Layer Engineering of High-κ Ferroelectricity in 2D Perovskites

Bao Wen Li, Minoru Osada, Yoon Hyun Kim, Yasuo Ebina, Kosho Akatsuka, Takayoshi Sasaki

    Research output: Contribution to journalArticle

    12 Citations (Scopus)

    Abstract

    Complex perovskite oxides offer tremendous potential for controlling their rich variety of electronic properties, including high-TC superconductivity, high-κ ferroelectricity, and quantum magnetism. Atomic-scale control of these intriguing properties in ultrathin perovskites is an important challenge for exploring new physics and device functionality at atomic dimensions. Here, we demonstrate atomic-scale engineering of dielectric responses using two-dimensional (2D) homologous perovskite nanosheets (Ca2Nam-3NbmO3m+1; m = 3-6). In this homologous 2D material, the thickness of the perovskite layers can be incrementally controlled by changing m, and such atomic layer engineering enhances the high-κ dielectric response and local ferroelectric instability. The end member (m = 6) attains a high dielectric constant of ∼70, which is the highest among all known dielectrics in the ultrathin region (<10 nm). These results provide a new strategy for achieving high-κ ferroelectrics for use in ultrascaled high-density capacitors and post-graphene technology.

    Original languageEnglish
    Pages (from-to)10868-10874
    Number of pages7
    JournalJournal of the American Chemical Society
    Volume139
    Issue number31
    DOIs
    Publication statusPublished - 2017 Aug 9

      Fingerprint

    ASJC Scopus subject areas

    • Catalysis
    • Chemistry(all)
    • Biochemistry
    • Colloid and Surface Chemistry

    Cite this

    Li, B. W., Osada, M., Kim, Y. H., Ebina, Y., Akatsuka, K., & Sasaki, T. (2017). Atomic Layer Engineering of High-κ Ferroelectricity in 2D Perovskites. Journal of the American Chemical Society, 139(31), 10868-10874. https://doi.org/10.1021/jacs.7b05665