Atomic structural analysis of a monolayer epitaxial film of hexagonal boron nitride/Ni(111) studied by LEED intensity analysis

Yasuo Gamou, Masayuki Terai, Ayato Nagashima, Chuhei Oshima

Research output: Contribution to journalArticle

44 Citations (Scopus)

Abstract

The atomic structure of a monolayer epitaxial film of hexagonal boron nitride (h-BN) formed on a Ni(111) surface was investigated by means of LEED intensity analysis. We measured the I-V curves of the (1,0), (0,1) and (1,1) diffraction spots from a 1 × 1 atomic structure, and analyzed them by using Van Hove's analytical program based on dynamical theory. Six different atomic structural models meeting the experimental requirement of the 3-m symmetry were evaluated with Pendry's reliability factor. The final best-fit structure characterized by the minimum Pendry's reliability factor of 0.27 is as follows; the nitrogen atom in a unit cell of the h-BN overlayer is located at the on-top site of the topmost Ni atoms, while the boron atom exists at the fcc-hollow site. The spacings between the nitrogen (boron) atom and the topmost Ni layer is 2.04 Å (2.2 Å) , which is much narrower than the interlayer spacing in bulk h-BN (3.33 Å).

Original languageEnglish
Pages (from-to)211-214
Number of pages4
JournalScience Reports of the Rerearch Institutes Tohoku University Series A-Physics
Volume44
Issue number2
Publication statusPublished - 1997 Mar

Fingerprint

Boron nitride
Epitaxial films
boron nitrides
structural analysis
Structural analysis
Monolayers
atomic structure
Atoms
Boron
boron
spacing
atoms
Nitrogen
Crystal atomic structure
nitrogen atoms
interlayers
hollow
nitrogen
requirements
Diffraction

Keywords

  • Epitaxial film
  • h-BN
  • LEED analysis
  • Monolayer
  • Rumpling structure

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Metals and Alloys

Cite this

Atomic structural analysis of a monolayer epitaxial film of hexagonal boron nitride/Ni(111) studied by LEED intensity analysis. / Gamou, Yasuo; Terai, Masayuki; Nagashima, Ayato; Oshima, Chuhei.

In: Science Reports of the Rerearch Institutes Tohoku University Series A-Physics, Vol. 44, No. 2, 03.1997, p. 211-214.

Research output: Contribution to journalArticle

@article{6b58cadef0c147158fddaa92d3fd7618,
title = "Atomic structural analysis of a monolayer epitaxial film of hexagonal boron nitride/Ni(111) studied by LEED intensity analysis",
abstract = "The atomic structure of a monolayer epitaxial film of hexagonal boron nitride (h-BN) formed on a Ni(111) surface was investigated by means of LEED intensity analysis. We measured the I-V curves of the (1,0), (0,1) and (1,1) diffraction spots from a 1 × 1 atomic structure, and analyzed them by using Van Hove's analytical program based on dynamical theory. Six different atomic structural models meeting the experimental requirement of the 3-m symmetry were evaluated with Pendry's reliability factor. The final best-fit structure characterized by the minimum Pendry's reliability factor of 0.27 is as follows; the nitrogen atom in a unit cell of the h-BN overlayer is located at the on-top site of the topmost Ni atoms, while the boron atom exists at the fcc-hollow site. The spacings between the nitrogen (boron) atom and the topmost Ni layer is 2.04 {\AA} (2.2 {\AA}) , which is much narrower than the interlayer spacing in bulk h-BN (3.33 {\AA}).",
keywords = "Epitaxial film, h-BN, LEED analysis, Monolayer, Rumpling structure",
author = "Yasuo Gamou and Masayuki Terai and Ayato Nagashima and Chuhei Oshima",
year = "1997",
month = "3",
language = "English",
volume = "44",
pages = "211--214",
journal = "Science Reports of the Research Institutes, Tohoku University, Series A: Physics, Chemistry and Metallurgy",
issn = "0040-8808",
publisher = "Tohoku University",
number = "2",

}

TY - JOUR

T1 - Atomic structural analysis of a monolayer epitaxial film of hexagonal boron nitride/Ni(111) studied by LEED intensity analysis

AU - Gamou, Yasuo

AU - Terai, Masayuki

AU - Nagashima, Ayato

AU - Oshima, Chuhei

PY - 1997/3

Y1 - 1997/3

N2 - The atomic structure of a monolayer epitaxial film of hexagonal boron nitride (h-BN) formed on a Ni(111) surface was investigated by means of LEED intensity analysis. We measured the I-V curves of the (1,0), (0,1) and (1,1) diffraction spots from a 1 × 1 atomic structure, and analyzed them by using Van Hove's analytical program based on dynamical theory. Six different atomic structural models meeting the experimental requirement of the 3-m symmetry were evaluated with Pendry's reliability factor. The final best-fit structure characterized by the minimum Pendry's reliability factor of 0.27 is as follows; the nitrogen atom in a unit cell of the h-BN overlayer is located at the on-top site of the topmost Ni atoms, while the boron atom exists at the fcc-hollow site. The spacings between the nitrogen (boron) atom and the topmost Ni layer is 2.04 Å (2.2 Å) , which is much narrower than the interlayer spacing in bulk h-BN (3.33 Å).

AB - The atomic structure of a monolayer epitaxial film of hexagonal boron nitride (h-BN) formed on a Ni(111) surface was investigated by means of LEED intensity analysis. We measured the I-V curves of the (1,0), (0,1) and (1,1) diffraction spots from a 1 × 1 atomic structure, and analyzed them by using Van Hove's analytical program based on dynamical theory. Six different atomic structural models meeting the experimental requirement of the 3-m symmetry were evaluated with Pendry's reliability factor. The final best-fit structure characterized by the minimum Pendry's reliability factor of 0.27 is as follows; the nitrogen atom in a unit cell of the h-BN overlayer is located at the on-top site of the topmost Ni atoms, while the boron atom exists at the fcc-hollow site. The spacings between the nitrogen (boron) atom and the topmost Ni layer is 2.04 Å (2.2 Å) , which is much narrower than the interlayer spacing in bulk h-BN (3.33 Å).

KW - Epitaxial film

KW - h-BN

KW - LEED analysis

KW - Monolayer

KW - Rumpling structure

UR - http://www.scopus.com/inward/record.url?scp=0000025322&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000025322&partnerID=8YFLogxK

M3 - Article

VL - 44

SP - 211

EP - 214

JO - Science Reports of the Research Institutes, Tohoku University, Series A: Physics, Chemistry and Metallurgy

JF - Science Reports of the Research Institutes, Tohoku University, Series A: Physics, Chemistry and Metallurgy

SN - 0040-8808

IS - 2

ER -