Atomic structure of CaF2/Si(111) interface and defect formation on CaF2(111) surface by electron irradiation

Kouji Miura, Kazuhiko Sugiura, Ryutaro Souda, Takashi Aizawa, Chuhei Oshima, Yoshio Ishizawa

    Research output: Contribution to journalArticle

    7 Citations (Scopus)

    Abstract

    Atomic and electronic structures of the CaF2/Si(111) interface and the desorption mechanism of F from epitaxial CaF2(111) films produced by electron irradiation have been studied by low-energy electron energy loss spectroscopy (EELS). The interface is formed by the desorption of F and becomes metallic. The F at the surface of epitaxial CaF2(111) films desorbs by electron irradiation, and the surface after F-desorption becomes metallic. The metallic surface reverts to the bulk electronic state before electron irradiation by annealing at about 400°C.

    Original languageEnglish
    Pages (from-to)809-813
    Number of pages5
    JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    Volume30
    Issue number4
    Publication statusPublished - 1991 Apr

    Fingerprint

    Electron irradiation
    electron irradiation
    atomic structure
    Desorption
    desorption
    Defects
    defects
    Crystal atomic structure
    Electron energy loss spectroscopy
    Electronic states
    Electronic structure
    energy dissipation
    Annealing
    electron energy
    electronic structure
    annealing
    electronics
    spectroscopy
    energy

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Atomic structure of CaF2/Si(111) interface and defect formation on CaF2(111) surface by electron irradiation. / Miura, Kouji; Sugiura, Kazuhiko; Souda, Ryutaro; Aizawa, Takashi; Oshima, Chuhei; Ishizawa, Yoshio.

    In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 30, No. 4, 04.1991, p. 809-813.

    Research output: Contribution to journalArticle

    Miura, Kouji ; Sugiura, Kazuhiko ; Souda, Ryutaro ; Aizawa, Takashi ; Oshima, Chuhei ; Ishizawa, Yoshio. / Atomic structure of CaF2/Si(111) interface and defect formation on CaF2(111) surface by electron irradiation. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 1991 ; Vol. 30, No. 4. pp. 809-813.
    @article{84428bbfdfef43af8f0244e6df479567,
    title = "Atomic structure of CaF2/Si(111) interface and defect formation on CaF2(111) surface by electron irradiation",
    abstract = "Atomic and electronic structures of the CaF2/Si(111) interface and the desorption mechanism of F from epitaxial CaF2(111) films produced by electron irradiation have been studied by low-energy electron energy loss spectroscopy (EELS). The interface is formed by the desorption of F and becomes metallic. The F at the surface of epitaxial CaF2(111) films desorbs by electron irradiation, and the surface after F-desorption becomes metallic. The metallic surface reverts to the bulk electronic state before electron irradiation by annealing at about 400°C.",
    author = "Kouji Miura and Kazuhiko Sugiura and Ryutaro Souda and Takashi Aizawa and Chuhei Oshima and Yoshio Ishizawa",
    year = "1991",
    month = "4",
    language = "English",
    volume = "30",
    pages = "809--813",
    journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
    issn = "0021-4922",
    publisher = "Japan Society of Applied Physics",
    number = "4",

    }

    TY - JOUR

    T1 - Atomic structure of CaF2/Si(111) interface and defect formation on CaF2(111) surface by electron irradiation

    AU - Miura, Kouji

    AU - Sugiura, Kazuhiko

    AU - Souda, Ryutaro

    AU - Aizawa, Takashi

    AU - Oshima, Chuhei

    AU - Ishizawa, Yoshio

    PY - 1991/4

    Y1 - 1991/4

    N2 - Atomic and electronic structures of the CaF2/Si(111) interface and the desorption mechanism of F from epitaxial CaF2(111) films produced by electron irradiation have been studied by low-energy electron energy loss spectroscopy (EELS). The interface is formed by the desorption of F and becomes metallic. The F at the surface of epitaxial CaF2(111) films desorbs by electron irradiation, and the surface after F-desorption becomes metallic. The metallic surface reverts to the bulk electronic state before electron irradiation by annealing at about 400°C.

    AB - Atomic and electronic structures of the CaF2/Si(111) interface and the desorption mechanism of F from epitaxial CaF2(111) films produced by electron irradiation have been studied by low-energy electron energy loss spectroscopy (EELS). The interface is formed by the desorption of F and becomes metallic. The F at the surface of epitaxial CaF2(111) films desorbs by electron irradiation, and the surface after F-desorption becomes metallic. The metallic surface reverts to the bulk electronic state before electron irradiation by annealing at about 400°C.

    UR - http://www.scopus.com/inward/record.url?scp=0026139999&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=0026139999&partnerID=8YFLogxK

    M3 - Article

    AN - SCOPUS:0026139999

    VL - 30

    SP - 809

    EP - 813

    JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

    JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

    SN - 0021-4922

    IS - 4

    ER -