Atomic structure of CaF2/Si(111) interface and defect formation on CaF2(111) surface by electron irradiation

Kouji Miura*, Kazuhiko Sugiura, Ryutaro Souda, Takashi Aizawa, Chuhei Oshima, Yoshio Ishizawa

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    7 Citations (Scopus)


    Atomic and electronic structures of the CaF2/Si(111) interface and the desorption mechanism of F from epitaxial CaF2(111) films produced by electron irradiation have been studied by low-energy electron energy loss spectroscopy (EELS). The interface is formed by the desorption of F and becomes metallic. The F at the surface of epitaxial CaF2(111) films desorbs by electron irradiation, and the surface after F-desorption becomes metallic. The metallic surface reverts to the bulk electronic state before electron irradiation by annealing at about 400°C.

    Original languageEnglish
    Pages (from-to)809-813
    Number of pages5
    JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    Issue number4
    Publication statusPublished - 1991 Apr

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)


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