A series of pseudomorphic (100) ZnSe/GaAs heterostructures were grown by molecular beam epitaxy on GaAs epilayers which had different As coverages of surfaces. A large variation of the interface state density was observed by capacitance-voltage measurements. Transmission electron microscope observations of cross-sectional samples revealed an interface layer in the heterostructures grown on As-deficient GaAs surfaces. Analyses of dark field images and high resolution microscope images have shown that the interface layer has a structure similar to that of Ga2Se3, which crystallizes in a zincblende type structure with vacancies on the Ga sublattice.
|Number of pages||6|
|Journal||materials transactions, jim|
|Publication status||Published - 1990 Jul|
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