Atomic Structure of Heteroepitaxial Interface between II-VI and III-V Semiconductor

N. Otsuka, D. Li, J. Qiu, M. Kobayashi, R. L. Gunshor

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A series of pseudomorphic (100) ZnSe/GaAs heterostructures were grown by molecular beam epitaxy on GaAs epilayers which had different As coverages of surfaces. A large variation of the interface state density was observed among the heterostructures by capacitance-voltage measurements. Transmission electron microscope observations of cross-sectional samples have revealed existence of an interface layer in the heterostructures grown on As-deficient GaAs surfaces. Analyses of dark field images and high resolution microscope images have shown that the interface layer has a structure similar to that of Ga2Se3 which crystallizes in a zincblende type structure with vacancies on the Ga sublattice.

Original languageEnglish
Pages (from-to)622-627
Number of pages6
JournalMaterials Transactions, JIM
Volume31
Issue number7
DOIs
Publication statusPublished - 1990 Jan 1
Externally publishedYes

Keywords

  • GaSe
  • ZnSe/GaAs heterostructure
  • cross-sectional transmission electron microscopy
  • interface layer
  • molecular beam epitaxy

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint Dive into the research topics of 'Atomic Structure of Heteroepitaxial Interface between II-VI and III-V Semiconductor'. Together they form a unique fingerprint.

  • Cite this