Atomic structure of heteroepitaxial interface between II-VI and III-V semiconductor

N. Otsuka, D. Li, J. Qiu, Masakazu Kobayashi, R. L. Gunshor

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A series of pseudomorphic (100) ZnSe/GaAs heterostructures were grown by molecular beam epitaxy on GaAs epilayers which had different As coverages of surfaces. A large variation of the interface state density was observed by capacitance-voltage measurements. Transmission electron microscope observations of cross-sectional samples revealed an interface layer in the heterostructures grown on As-deficient GaAs surfaces. Analyses of dark field images and high resolution microscope images have shown that the interface layer has a structure similar to that of Ga2Se3, which crystallizes in a zincblende type structure with vacancies on the Ga sublattice.

Original languageEnglish
Pages (from-to)622-627
Number of pages6
Journalmaterials transactions, jim
Volume31
Issue number7
Publication statusPublished - 1990 Jul
Externally publishedYes

Fingerprint

atomic structure
Heterojunctions
Capacitance measurement
Interface states
Epilayers
Voltage measurement
Molecular beam epitaxy
Vacancies
Microscopes
Electron microscopes
zincblende
image resolution
electrical measurement
sublattices
molecular beam epitaxy
electron microscopes
capacitance
microscopes
high resolution
III-V semiconductors

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Atomic structure of heteroepitaxial interface between II-VI and III-V semiconductor. / Otsuka, N.; Li, D.; Qiu, J.; Kobayashi, Masakazu; Gunshor, R. L.

In: materials transactions, jim, Vol. 31, No. 7, 07.1990, p. 622-627.

Research output: Contribution to journalArticle

Otsuka, N. ; Li, D. ; Qiu, J. ; Kobayashi, Masakazu ; Gunshor, R. L. / Atomic structure of heteroepitaxial interface between II-VI and III-V semiconductor. In: materials transactions, jim. 1990 ; Vol. 31, No. 7. pp. 622-627.
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