Atomic structure of heteroepitaxial interface between II-VI and III-V semiconductor

N. Otsuka, D. Li, J. Qiu, Masakazu Kobayashi, R. L. Gunshor

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Abstract

A series of pseudomorphic (100) ZnSe/GaAs heterostructures were grown by molecular beam epitaxy on GaAs epilayers which had different As coverages of surfaces. A large variation of the interface state density was observed by capacitance-voltage measurements. Transmission electron microscope observations of cross-sectional samples revealed an interface layer in the heterostructures grown on As-deficient GaAs surfaces. Analyses of dark field images and high resolution microscope images have shown that the interface layer has a structure similar to that of Ga2Se3, which crystallizes in a zincblende type structure with vacancies on the Ga sublattice.

Original languageEnglish
Pages (from-to)622-627
Number of pages6
Journalmaterials transactions, jim
Volume31
Issue number7
Publication statusPublished - 1990 Jul
Externally publishedYes

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ASJC Scopus subject areas

  • Engineering(all)

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