Atomically flat (0 0 1)GaAs surface prepared by two-step atomic-hydrogen treatment and its application to heteroepitaxy of GaN

Hajime Nagano, Zhixin Qin, Anwei Jia, Yoshinori Kato, Masakazu Kobayashi, Akihiko Yoshikawa, Kiyoshi Takahashi

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Substrate surface treatment techniques and growth conditions are the key of growing high-quality cubic GaN (c-GaN) epitaxial layers on (0 0 1) GaAs substrates. An atomically flat (0 0 1) GaAs substrate surface can be obtained by a two-step atomic hydrogen (atomic-H) irradiation technique. The typical surface of the substrate treated by the atomic-H consists of narrow terraces of one monolayer step height with acute-angle polygonal structures. The X-ray rocking curve FWHM of GaN (0 0 2) grown on the atomic-H treated substrate is less than 90 arcsec. It is shown that high-density monolayer steps and kinks at the surface terrace edge would be preferable for the uniform nucleation of the c-GaN buffer layer.

Original languageEnglish
Pages (from-to)265-269
Number of pages5
JournalJournal of Crystal Growth
Volume189-190
Publication statusPublished - 1998 Jun 15
Externally publishedYes

Fingerprint

Epitaxial growth
Hydrogen
Substrates
hydrogen
Monolayers
Epitaxial layers
Buffer layers
Full width at half maximum
surface treatment
Surface treatment
Nucleation
buffers
gallium arsenide
Irradiation
nucleation
X rays
irradiation
curves
x rays

Keywords

  • (0 0 1) GaAs
  • Atomic hydrogen
  • Atomically flat
  • Cubic GaN
  • Kinks
  • Surface treatment

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Atomically flat (0 0 1)GaAs surface prepared by two-step atomic-hydrogen treatment and its application to heteroepitaxy of GaN. / Nagano, Hajime; Qin, Zhixin; Jia, Anwei; Kato, Yoshinori; Kobayashi, Masakazu; Yoshikawa, Akihiko; Takahashi, Kiyoshi.

In: Journal of Crystal Growth, Vol. 189-190, 15.06.1998, p. 265-269.

Research output: Contribution to journalArticle

Nagano, Hajime ; Qin, Zhixin ; Jia, Anwei ; Kato, Yoshinori ; Kobayashi, Masakazu ; Yoshikawa, Akihiko ; Takahashi, Kiyoshi. / Atomically flat (0 0 1)GaAs surface prepared by two-step atomic-hydrogen treatment and its application to heteroepitaxy of GaN. In: Journal of Crystal Growth. 1998 ; Vol. 189-190. pp. 265-269.
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AU - Kobayashi, Masakazu

AU - Yoshikawa, Akihiko

AU - Takahashi, Kiyoshi

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