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Atomically flat (0 0 1)GaAs surface prepared by two-step atomic-hydrogen treatment and its application to heteroepitaxy of GaN
Hajime Nagano*, Zhixin Qin, Anwei Jia, Yoshinori Kato, Masakazu Kobayashi, Akihiko Yoshikawa, Kiyoshi Takahashi
*Corresponding author for this work
Research output: Contribution to journal › Article › peer-review
11
Citations
(Scopus)