Atomically flat GaAs(001) surfaces obtained by high-temperature treatment with atomic hydrogen irradiation

Kengou Yamaguchi, Zhixin Qin, Hajime Nagano, Masakazu Kobayashi, Akihiko Yoshikawa, Kiyoshi Takahashi

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

An atomically flat GaAs(001) surface can be obtained by a two-step atomic hydrogen (atomic-H) irradiation technique. This method includes low-temperature cleaning and high-temperature smoothening of the GaAs subtle surface. The reflection high energy electron diffraction (RHEED) and AFM study showed that a wide terrace with a 1 monolayer step height was observed when a GaAs(001) surface was cleaned at 400°C and smoothened at 540°C with atomic-H irradiation. The irradiation of atomic-H during the high temperature process maintained a certain surface stoichiometry, and resulted in an atomically flat substrate surface. This technique is useful for heterovalent epitaxy systems involving a single chamber growth system.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume36
Issue number10 SUPPL. B
Publication statusPublished - 1997 Oct 15
Externally publishedYes

Fingerprint

Irradiation
Hydrogen
irradiation
hydrogen
Temperature
phytotrons
Reflection high energy electron diffraction
Epitaxial growth
Stoichiometry
epitaxy
high energy electrons
cleaning
stoichiometry
Cleaning
Monolayers
electron diffraction
atomic force microscopy
Substrates

Keywords

  • Atomic hydrogen
  • Cleaning
  • Etching
  • GaAs(001)
  • Smoothening
  • Surface stoichiometry
  • Two-step treatment

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Atomically flat GaAs(001) surfaces obtained by high-temperature treatment with atomic hydrogen irradiation. / Yamaguchi, Kengou; Qin, Zhixin; Nagano, Hajime; Kobayashi, Masakazu; Yoshikawa, Akihiko; Takahashi, Kiyoshi.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 36, No. 10 SUPPL. B, 15.10.1997.

Research output: Contribution to journalArticle

Yamaguchi, Kengou ; Qin, Zhixin ; Nagano, Hajime ; Kobayashi, Masakazu ; Yoshikawa, Akihiko ; Takahashi, Kiyoshi. / Atomically flat GaAs(001) surfaces obtained by high-temperature treatment with atomic hydrogen irradiation. In: Japanese Journal of Applied Physics, Part 2: Letters. 1997 ; Vol. 36, No. 10 SUPPL. B.
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