Atomically flat GaAs(001) surfaces obtained by high-temperature treatment with atomic hydrogen irradiation

Kengou Yamaguchi; Zhixin Qin; Hajime Nagano; Masakazu Kobayashi; Akihiko Yoshikawa; Kiyoshi Takahashi

doi:10.1143/jjap.36.l1367

Atomically flat GaAs(001) surfaces obtained by high-temperature treatment with atomic hydrogen irradiation

Kengou Yamaguchi^*, Zhixin Qin, Hajime Nagano, Masakazu Kobayashi, Akihiko Yoshikawa, Kiyoshi Takahashi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

An atomically flat GaAs(001) surface can be obtained by a two-step atomic hydrogen (atomic-H) irradiation technique. This method includes low-temperature cleaning and high-temperature smoothening of the GaAs subtle surface. The reflection high energy electron diffraction (RHEED) and AFM study showed that a wide terrace with a 1 monolayer step height was observed when a GaAs(001) surface was cleaned at 400°C and smoothened at 540°C with atomic-H irradiation. The irradiation of atomic-H during the high temperature process maintained a certain surface stoichiometry, and resulted in an atomically flat substrate surface. This technique is useful for heterovalent epitaxy systems involving a single chamber growth system.

Original language	English
Pages (from-to)	L1367-L1369
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	36
Issue number	10 SUPPL. B
DOIs	https://doi.org/10.1143/jjap.36.l1367
Publication status	Published - 1997 Oct 15
Externally published	Yes

Keywords

Atomic hydrogen
Cleaning
Etching
GaAs(001)
Smoothening
Surface stoichiometry
Two-step treatment

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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title = "Atomically flat GaAs(001) surfaces obtained by high-temperature treatment with atomic hydrogen irradiation",

abstract = "An atomically flat GaAs(001) surface can be obtained by a two-step atomic hydrogen (atomic-H) irradiation technique. This method includes low-temperature cleaning and high-temperature smoothening of the GaAs subtle surface. The reflection high energy electron diffraction (RHEED) and AFM study showed that a wide terrace with a 1 monolayer step height was observed when a GaAs(001) surface was cleaned at 400°C and smoothened at 540°C with atomic-H irradiation. The irradiation of atomic-H during the high temperature process maintained a certain surface stoichiometry, and resulted in an atomically flat substrate surface. This technique is useful for heterovalent epitaxy systems involving a single chamber growth system.",

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author = "Kengou Yamaguchi and Zhixin Qin and Hajime Nagano and Masakazu Kobayashi and Akihiko Yoshikawa and Kiyoshi Takahashi",

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T1 - Atomically flat GaAs(001) surfaces obtained by high-temperature treatment with atomic hydrogen irradiation

AU - Yamaguchi, Kengou

AU - Qin, Zhixin

AU - Nagano, Hajime

AU - Kobayashi, Masakazu

AU - Yoshikawa, Akihiko

AU - Takahashi, Kiyoshi

PY - 1997/10/15

Y1 - 1997/10/15

N2 - An atomically flat GaAs(001) surface can be obtained by a two-step atomic hydrogen (atomic-H) irradiation technique. This method includes low-temperature cleaning and high-temperature smoothening of the GaAs subtle surface. The reflection high energy electron diffraction (RHEED) and AFM study showed that a wide terrace with a 1 monolayer step height was observed when a GaAs(001) surface was cleaned at 400°C and smoothened at 540°C with atomic-H irradiation. The irradiation of atomic-H during the high temperature process maintained a certain surface stoichiometry, and resulted in an atomically flat substrate surface. This technique is useful for heterovalent epitaxy systems involving a single chamber growth system.

AB - An atomically flat GaAs(001) surface can be obtained by a two-step atomic hydrogen (atomic-H) irradiation technique. This method includes low-temperature cleaning and high-temperature smoothening of the GaAs subtle surface. The reflection high energy electron diffraction (RHEED) and AFM study showed that a wide terrace with a 1 monolayer step height was observed when a GaAs(001) surface was cleaned at 400°C and smoothened at 540°C with atomic-H irradiation. The irradiation of atomic-H during the high temperature process maintained a certain surface stoichiometry, and resulted in an atomically flat substrate surface. This technique is useful for heterovalent epitaxy systems involving a single chamber growth system.

KW - Atomic hydrogen

KW - Cleaning

KW - Etching

KW - GaAs(001)

KW - Smoothening

KW - Surface stoichiometry

KW - Two-step treatment

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ER -

Atomically flat GaAs(001) surfaces obtained by high-temperature treatment with atomic hydrogen irradiation

Abstract

Keywords

ASJC Scopus subject areas

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