Autonomous refresh of floating body cell (FBC)

Takashi Ohsawa, Ryo Fukuda, Tomoki Higashi, Katsuyuki Fujita, Fumiyoshi Matsuoka, Tomoaki Shino, Hironobu Furuhashi, Yoshihiro Minami, Hiroomi Nakajima, Takeshi Hamamoto, Yohji Watanabe, Akihiro Nitayama, Tohru Furuyama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Physics of autonomous refresh of FBC is presented. Current input to the floating body by impact ionization and output by charge pumping can balance to make FBC refresh by itself without sense amplifier operation. Thanks to this feature, multiple cells on a BL can be refreshed simultaneously, leading to a drastic reduction of BL charging current compared to the conventional refresh. 600μA refresh current for 1G-bit memory is achieved in 32nm technology node with 4ms retention time. If gate direct tunneling current is used as output, FBC can realize static RAM without periodical refresh when retaining data.

Original languageEnglish
Title of host publication2008 IEEE International Electron Devices Meeting, IEDM 2008
DOIs
Publication statusPublished - 2008 Dec 1
Event2008 IEEE International Electron Devices Meeting, IEDM 2008 - San Francisco, CA, United States
Duration: 2008 Dec 152008 Dec 17

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Conference

Conference2008 IEEE International Electron Devices Meeting, IEDM 2008
CountryUnited States
CitySan Francisco, CA
Period08/12/1508/12/17

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Ohsawa, T., Fukuda, R., Higashi, T., Fujita, K., Matsuoka, F., Shino, T., Furuhashi, H., Minami, Y., Nakajima, H., Hamamoto, T., Watanabe, Y., Nitayama, A., & Furuyama, T. (2008). Autonomous refresh of floating body cell (FBC). In 2008 IEEE International Electron Devices Meeting, IEDM 2008 [4796819] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2008.4796819