Autonomous refresh of floating body cell (FBC)

Takashi Ohsawa, Ryo Fukuda, Tomoki Higashi, Katsuyuki Fujita, Fumiyoshi Matsuoka, Tomoaki Shino, Hironobu Furuhashi, Yoshihiro Minami, Hiroomi Nakajima, Takeshi Hamamoto, Yohji Watanabe, Akihiro Nitayama, Tohru Furuyama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Physics of autonomous refresh of FBC is presented. Current input to the floating body by impact ionization and output by charge pumping can balance to make FBC refresh by itself without sense amplifier operation. Thanks to this feature, multiple cells on a BL can be refreshed simultaneously, leading to a drastic reduction of BL charging current compared to the conventional refresh. 600μA refresh current for 1G-bit memory is achieved in 32nm technology node with 4ms retention time. If gate direct tunneling current is used as output, FBC can realize static RAM without periodical refresh when retaining data.

Original languageEnglish
Title of host publication2008 IEEE International Electron Devices Meeting, IEDM 2008
DOIs
Publication statusPublished - 2008
Externally publishedYes
Event2008 IEEE International Electron Devices Meeting, IEDM 2008 - San Francisco, CA
Duration: 2008 Dec 152008 Dec 17

Other

Other2008 IEEE International Electron Devices Meeting, IEDM 2008
CitySan Francisco, CA
Period08/12/1508/12/17

Fingerprint

Impact ionization
Random access storage
floating
Physics
Data storage equipment
cells
output
retaining
charging
pumping
amplifiers
ionization
physics

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

Ohsawa, T., Fukuda, R., Higashi, T., Fujita, K., Matsuoka, F., Shino, T., ... Furuyama, T. (2008). Autonomous refresh of floating body cell (FBC). In 2008 IEEE International Electron Devices Meeting, IEDM 2008 [4796819] https://doi.org/10.1109/IEDM.2008.4796819

Autonomous refresh of floating body cell (FBC). / Ohsawa, Takashi; Fukuda, Ryo; Higashi, Tomoki; Fujita, Katsuyuki; Matsuoka, Fumiyoshi; Shino, Tomoaki; Furuhashi, Hironobu; Minami, Yoshihiro; Nakajima, Hiroomi; Hamamoto, Takeshi; Watanabe, Yohji; Nitayama, Akihiro; Furuyama, Tohru.

2008 IEEE International Electron Devices Meeting, IEDM 2008. 2008. 4796819.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ohsawa, T, Fukuda, R, Higashi, T, Fujita, K, Matsuoka, F, Shino, T, Furuhashi, H, Minami, Y, Nakajima, H, Hamamoto, T, Watanabe, Y, Nitayama, A & Furuyama, T 2008, Autonomous refresh of floating body cell (FBC). in 2008 IEEE International Electron Devices Meeting, IEDM 2008., 4796819, 2008 IEEE International Electron Devices Meeting, IEDM 2008, San Francisco, CA, 08/12/15. https://doi.org/10.1109/IEDM.2008.4796819
Ohsawa T, Fukuda R, Higashi T, Fujita K, Matsuoka F, Shino T et al. Autonomous refresh of floating body cell (FBC). In 2008 IEEE International Electron Devices Meeting, IEDM 2008. 2008. 4796819 https://doi.org/10.1109/IEDM.2008.4796819
Ohsawa, Takashi ; Fukuda, Ryo ; Higashi, Tomoki ; Fujita, Katsuyuki ; Matsuoka, Fumiyoshi ; Shino, Tomoaki ; Furuhashi, Hironobu ; Minami, Yoshihiro ; Nakajima, Hiroomi ; Hamamoto, Takeshi ; Watanabe, Yohji ; Nitayama, Akihiro ; Furuyama, Tohru. / Autonomous refresh of floating body cell (FBC). 2008 IEEE International Electron Devices Meeting, IEDM 2008. 2008.
@inproceedings{732aa18cf63a41e1a1f2b5ad0b082f18,
title = "Autonomous refresh of floating body cell (FBC)",
abstract = "Physics of autonomous refresh of FBC is presented. Current input to the floating body by impact ionization and output by charge pumping can balance to make FBC refresh by itself without sense amplifier operation. Thanks to this feature, multiple cells on a BL can be refreshed simultaneously, leading to a drastic reduction of BL charging current compared to the conventional refresh. 600μA refresh current for 1G-bit memory is achieved in 32nm technology node with 4ms retention time. If gate direct tunneling current is used as output, FBC can realize static RAM without periodical refresh when retaining data.",
author = "Takashi Ohsawa and Ryo Fukuda and Tomoki Higashi and Katsuyuki Fujita and Fumiyoshi Matsuoka and Tomoaki Shino and Hironobu Furuhashi and Yoshihiro Minami and Hiroomi Nakajima and Takeshi Hamamoto and Yohji Watanabe and Akihiro Nitayama and Tohru Furuyama",
year = "2008",
doi = "10.1109/IEDM.2008.4796819",
language = "English",
isbn = "9781424423781",
booktitle = "2008 IEEE International Electron Devices Meeting, IEDM 2008",

}

TY - GEN

T1 - Autonomous refresh of floating body cell (FBC)

AU - Ohsawa, Takashi

AU - Fukuda, Ryo

AU - Higashi, Tomoki

AU - Fujita, Katsuyuki

AU - Matsuoka, Fumiyoshi

AU - Shino, Tomoaki

AU - Furuhashi, Hironobu

AU - Minami, Yoshihiro

AU - Nakajima, Hiroomi

AU - Hamamoto, Takeshi

AU - Watanabe, Yohji

AU - Nitayama, Akihiro

AU - Furuyama, Tohru

PY - 2008

Y1 - 2008

N2 - Physics of autonomous refresh of FBC is presented. Current input to the floating body by impact ionization and output by charge pumping can balance to make FBC refresh by itself without sense amplifier operation. Thanks to this feature, multiple cells on a BL can be refreshed simultaneously, leading to a drastic reduction of BL charging current compared to the conventional refresh. 600μA refresh current for 1G-bit memory is achieved in 32nm technology node with 4ms retention time. If gate direct tunneling current is used as output, FBC can realize static RAM without periodical refresh when retaining data.

AB - Physics of autonomous refresh of FBC is presented. Current input to the floating body by impact ionization and output by charge pumping can balance to make FBC refresh by itself without sense amplifier operation. Thanks to this feature, multiple cells on a BL can be refreshed simultaneously, leading to a drastic reduction of BL charging current compared to the conventional refresh. 600μA refresh current for 1G-bit memory is achieved in 32nm technology node with 4ms retention time. If gate direct tunneling current is used as output, FBC can realize static RAM without periodical refresh when retaining data.

UR - http://www.scopus.com/inward/record.url?scp=64549104147&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=64549104147&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2008.4796819

DO - 10.1109/IEDM.2008.4796819

M3 - Conference contribution

AN - SCOPUS:64549104147

SN - 9781424423781

BT - 2008 IEEE International Electron Devices Meeting, IEDM 2008

ER -