Backscattering-correction for AES spectra measured at oblique (>45°) incidence of primary electron beam

S. Shimotsuma, s. Ichimura

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The validity of matrix corrections on an AES analysis for incident angles θ (measured from the surface normal) of >45° was examined. The correction factors to take into account were the atomic density correction factor (N), the electron backscattering correction factor (R) and the inelastic mean free path (λ). The backscattering correction factor at large incidence angles was estimated by extrapolation from the factors for θ < 45°, which have been reported based on Monte-Carlo simulations. The validity of the extrapolation was checked using pure Au and Cu samples used in the measurements of AES intensity dependence on the angle of incidence. This present approach then was applied to the quantitative analysis of Si3N4 samples for a large incident angles. It was confirmed that the proposed matrix correction method is more accurate than the conventional one based on the use of sensitivity factors.

Original languageEnglish
Pages (from-to)102-105
Number of pages4
JournalSurface and Interface Analysis
Volume31
Issue number2
DOIs
Publication statusPublished - 2001 Feb 1
Externally publishedYes

Keywords

  • AES
  • Backscattering factor
  • Insulator
  • Large incident angle
  • Quantitative analysis

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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