Backscattering-correction for AES spectra measured at oblique (>45°) incidence of primary electron beam

S. Shimotsuma, Shingo Ichimura

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The validity of matrix corrections on an AES analysis for incident angles θ (measured from the surface normal) of >45° was examined. The correction factors to take into account were the atomic density correction factor (N), the electron backscattering correction factor (R) and the inelastic mean free path (λ). The backscattering correction factor at large incidence angles was estimated by extrapolation from the factors for θ < 45°, which have been reported based on Monte-Carlo simulations. The validity of the extrapolation was checked using pure Au and Cu samples used in the measurements of AES intensity dependence on the angle of incidence. This present approach then was applied to the quantitative analysis of Si3N4 samples for a large incident angles. It was confirmed that the proposed matrix correction method is more accurate than the conventional one based on the use of sensitivity factors.

Original languageEnglish
Pages (from-to)102-105
Number of pages4
JournalSurface and Interface Analysis
Volume31
Issue number2
DOIs
Publication statusPublished - 2001 Feb 1
Externally publishedYes

Fingerprint

Backscattering
Extrapolation
Electron beams
backscattering
incidence
electron beams
R Factors
Electrons
extrapolation
Chemical analysis
matrices
mean free path
quantitative analysis
sensitivity
Monte Carlo simulation
silicon nitride
electrons
simulation

Keywords

  • AES
  • Backscattering factor
  • Insulator
  • Large incident angle
  • Quantitative analysis

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

Backscattering-correction for AES spectra measured at oblique (>45°) incidence of primary electron beam. / Shimotsuma, S.; Ichimura, Shingo.

In: Surface and Interface Analysis, Vol. 31, No. 2, 01.02.2001, p. 102-105.

Research output: Contribution to journalArticle

@article{0be5e0fa2ebd4e13b3932387be50cbf3,
title = "Backscattering-correction for AES spectra measured at oblique (>45°) incidence of primary electron beam",
abstract = "The validity of matrix corrections on an AES analysis for incident angles θ (measured from the surface normal) of >45° was examined. The correction factors to take into account were the atomic density correction factor (N), the electron backscattering correction factor (R) and the inelastic mean free path (λ). The backscattering correction factor at large incidence angles was estimated by extrapolation from the factors for θ < 45°, which have been reported based on Monte-Carlo simulations. The validity of the extrapolation was checked using pure Au and Cu samples used in the measurements of AES intensity dependence on the angle of incidence. This present approach then was applied to the quantitative analysis of Si3N4 samples for a large incident angles. It was confirmed that the proposed matrix correction method is more accurate than the conventional one based on the use of sensitivity factors.",
keywords = "AES, Backscattering factor, Insulator, Large incident angle, Quantitative analysis",
author = "S. Shimotsuma and Shingo Ichimura",
year = "2001",
month = "2",
day = "1",
doi = "10.1002/sia.963",
language = "English",
volume = "31",
pages = "102--105",
journal = "Surface and Interface Analysis",
issn = "0142-2421",
publisher = "John Wiley and Sons Ltd",
number = "2",

}

TY - JOUR

T1 - Backscattering-correction for AES spectra measured at oblique (>45°) incidence of primary electron beam

AU - Shimotsuma, S.

AU - Ichimura, Shingo

PY - 2001/2/1

Y1 - 2001/2/1

N2 - The validity of matrix corrections on an AES analysis for incident angles θ (measured from the surface normal) of >45° was examined. The correction factors to take into account were the atomic density correction factor (N), the electron backscattering correction factor (R) and the inelastic mean free path (λ). The backscattering correction factor at large incidence angles was estimated by extrapolation from the factors for θ < 45°, which have been reported based on Monte-Carlo simulations. The validity of the extrapolation was checked using pure Au and Cu samples used in the measurements of AES intensity dependence on the angle of incidence. This present approach then was applied to the quantitative analysis of Si3N4 samples for a large incident angles. It was confirmed that the proposed matrix correction method is more accurate than the conventional one based on the use of sensitivity factors.

AB - The validity of matrix corrections on an AES analysis for incident angles θ (measured from the surface normal) of >45° was examined. The correction factors to take into account were the atomic density correction factor (N), the electron backscattering correction factor (R) and the inelastic mean free path (λ). The backscattering correction factor at large incidence angles was estimated by extrapolation from the factors for θ < 45°, which have been reported based on Monte-Carlo simulations. The validity of the extrapolation was checked using pure Au and Cu samples used in the measurements of AES intensity dependence on the angle of incidence. This present approach then was applied to the quantitative analysis of Si3N4 samples for a large incident angles. It was confirmed that the proposed matrix correction method is more accurate than the conventional one based on the use of sensitivity factors.

KW - AES

KW - Backscattering factor

KW - Insulator

KW - Large incident angle

KW - Quantitative analysis

UR - http://www.scopus.com/inward/record.url?scp=0035247396&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035247396&partnerID=8YFLogxK

U2 - 10.1002/sia.963

DO - 10.1002/sia.963

M3 - Article

AN - SCOPUS:0035247396

VL - 31

SP - 102

EP - 105

JO - Surface and Interface Analysis

JF - Surface and Interface Analysis

SN - 0142-2421

IS - 2

ER -