Abstract
The electron backscattering effect which is important for the quantitative interpretation of "matrix effects" in AES is investigated by applying the Monte Carlo calculation technique. The present calculation model is based on the use of a precise elastic scattering cross-section obtained by the partial wave expansion method, as well as on the combined use of Gryzinski's excitation function and Bethe's stopping power for inelastic scattering. Systematic calculations of the backscattering factors were performed for over 25 materials including pure elements, compounds, and alloys, which have been widely used as standard materials for practical Auger analysis. The results should enable the accuracy of quantitative analysis by AES to be improved.
Original language | English |
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Pages (from-to) | 386-408 |
Number of pages | 23 |
Journal | Surface Science |
Volume | 112 |
Issue number | 3 |
DOIs | |
Publication status | Published - 1981 Dec 2 |
Externally published | Yes |
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry