Backside layout design of Snapback-free RCIGBT with multiple-cell

Zhongke Chang, Xiaofei Zhu, Masahide Inuishi

Research output: Contribution to journalConference article

Abstract

—A backside layout design for multiple cell RCIGBT is proposed to suppress the snapback effect which happens in the turn-on process of RCIGBT in this paper. The internal operation mechanism of RCIGBT has been analyzed by device simulation, proving that our backside layout design works well. Reduction in the ratio of backside N+/P+ area as well as the N buffer doping density and increase in the number of cells in chip are all proved as useful methods in reducing snapback voltage. Although some novel RCIGBT structures have been proposed to eliminate the snapback effect, most of them have been based on a single cell structure, which is not sufficient for the analysis of RCIGBT. It’s more practical and feasible in production to simply optimize the backside layout design of N+, P+ short area with the multiple cell RCIGBT structure. Here we will report on the analysis of the snapback effect and the backside optimum layout design for the multiple cell RCIGBT.

Original languageEnglish
Pages (from-to)299-303
Number of pages5
JournalLecture Notes in Engineering and Computer Science
Volume2239
Publication statusPublished - 2019 Jan 1
Event2019 International MultiConference of Engineers and Computer Scientists, IMECS 2019 - Kowloon, Hong Kong
Duration: 2019 Mar 132019 Mar 15

Fingerprint

Doping (additives)
Electric potential

Keywords

  • Backside layout
  • Multiple cell
  • RCIGBT
  • Snapback

ASJC Scopus subject areas

  • Computer Science (miscellaneous)

Cite this

Backside layout design of Snapback-free RCIGBT with multiple-cell. / Chang, Zhongke; Zhu, Xiaofei; Inuishi, Masahide.

In: Lecture Notes in Engineering and Computer Science, Vol. 2239, 01.01.2019, p. 299-303.

Research output: Contribution to journalConference article

@article{bb4f262bef1b4a93a863c52abcec927a,
title = "Backside layout design of Snapback-free RCIGBT with multiple-cell",
abstract = "—A backside layout design for multiple cell RCIGBT is proposed to suppress the snapback effect which happens in the turn-on process of RCIGBT in this paper. The internal operation mechanism of RCIGBT has been analyzed by device simulation, proving that our backside layout design works well. Reduction in the ratio of backside N+/P+ area as well as the N buffer doping density and increase in the number of cells in chip are all proved as useful methods in reducing snapback voltage. Although some novel RCIGBT structures have been proposed to eliminate the snapback effect, most of them have been based on a single cell structure, which is not sufficient for the analysis of RCIGBT. It’s more practical and feasible in production to simply optimize the backside layout design of N+, P+ short area with the multiple cell RCIGBT structure. Here we will report on the analysis of the snapback effect and the backside optimum layout design for the multiple cell RCIGBT.",
keywords = "Backside layout, Multiple cell, RCIGBT, Snapback",
author = "Zhongke Chang and Xiaofei Zhu and Masahide Inuishi",
year = "2019",
month = "1",
day = "1",
language = "English",
volume = "2239",
pages = "299--303",
journal = "Lecture Notes in Engineering and Computer Science",
issn = "2078-0958",

}

TY - JOUR

T1 - Backside layout design of Snapback-free RCIGBT with multiple-cell

AU - Chang, Zhongke

AU - Zhu, Xiaofei

AU - Inuishi, Masahide

PY - 2019/1/1

Y1 - 2019/1/1

N2 - —A backside layout design for multiple cell RCIGBT is proposed to suppress the snapback effect which happens in the turn-on process of RCIGBT in this paper. The internal operation mechanism of RCIGBT has been analyzed by device simulation, proving that our backside layout design works well. Reduction in the ratio of backside N+/P+ area as well as the N buffer doping density and increase in the number of cells in chip are all proved as useful methods in reducing snapback voltage. Although some novel RCIGBT structures have been proposed to eliminate the snapback effect, most of them have been based on a single cell structure, which is not sufficient for the analysis of RCIGBT. It’s more practical and feasible in production to simply optimize the backside layout design of N+, P+ short area with the multiple cell RCIGBT structure. Here we will report on the analysis of the snapback effect and the backside optimum layout design for the multiple cell RCIGBT.

AB - —A backside layout design for multiple cell RCIGBT is proposed to suppress the snapback effect which happens in the turn-on process of RCIGBT in this paper. The internal operation mechanism of RCIGBT has been analyzed by device simulation, proving that our backside layout design works well. Reduction in the ratio of backside N+/P+ area as well as the N buffer doping density and increase in the number of cells in chip are all proved as useful methods in reducing snapback voltage. Although some novel RCIGBT structures have been proposed to eliminate the snapback effect, most of them have been based on a single cell structure, which is not sufficient for the analysis of RCIGBT. It’s more practical and feasible in production to simply optimize the backside layout design of N+, P+ short area with the multiple cell RCIGBT structure. Here we will report on the analysis of the snapback effect and the backside optimum layout design for the multiple cell RCIGBT.

KW - Backside layout

KW - Multiple cell

KW - RCIGBT

KW - Snapback

UR - http://www.scopus.com/inward/record.url?scp=85065801216&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85065801216&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:85065801216

VL - 2239

SP - 299

EP - 303

JO - Lecture Notes in Engineering and Computer Science

JF - Lecture Notes in Engineering and Computer Science

SN - 2078-0958

ER -