Band structure modulation by carrier doping in random-network carbon nanotube transistors

Shuichi Nakamura; Megumi Ohishi; Masashi Shiraishi; Taishi Takenobu; Yoshihiro Iwasa; Hiromichi Kataura

doi:10.1063/1.2219389

Band structure modulation by carrier doping in random-network carbon nanotube transistors

Shuichi Nakamura, Megumi Ohishi, Masashi Shiraishi, Taishi Takenobu, Yoshihiro Iwasa, Hiromichi Kataura

Research output: Contribution to journal › Article

12 Citations (Scopus)

Abstract

We investigated a role of a Schottky barrier (SB) in carrier doped random-network single-walled carbon nanotube field effect transistors (RN-SWNT-FETs) and the precise estimation of the SB height by a suitable combination of the gate and source-drain voltages. The SB heights were 70 meV for hole and 100 meV for electron in p- and n-type FETs, respectively. Furthermore, the barrier height was able to be modulated by changing the doping level, which indicates the possibility of controlling the characteristics of RN-SWNT-FETs.

Original language	English
Article number	013112
Journal	Applied Physics Letters
Volume	89
Issue number	1
DOIs	https://doi.org/10.1063/1.2219389
Publication status	Published - 2006
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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AU - Iwasa, Yoshihiro

AU - Kataura, Hiromichi

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AB - We investigated a role of a Schottky barrier (SB) in carrier doped random-network single-walled carbon nanotube field effect transistors (RN-SWNT-FETs) and the precise estimation of the SB height by a suitable combination of the gate and source-drain voltages. The SB heights were 70 meV for hole and 100 meV for electron in p- and n-type FETs, respectively. Furthermore, the barrier height was able to be modulated by changing the doping level, which indicates the possibility of controlling the characteristics of RN-SWNT-FETs.

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