Abstract
We investigated a role of a Schottky barrier (SB) in carrier doped random-network single-walled carbon nanotube field effect transistors (RN-SWNT-FETs) and the precise estimation of the SB height by a suitable combination of the gate and source-drain voltages. The SB heights were 70 meV for hole and 100 meV for electron in p- and n-type FETs, respectively. Furthermore, the barrier height was able to be modulated by changing the doping level, which indicates the possibility of controlling the characteristics of RN-SWNT-FETs.
Original language | English |
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Article number | 013112 |
Journal | Applied Physics Letters |
Volume | 89 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2006 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)