Abstract
We investigated a role of a Schottky barrier (SB) in carrier doped random-network single-walled carbon nanotube field effect transistors (RN-SWNT-FETs) and the precise estimation of the SB height by a suitable combination of the gate and source-drain voltages. The SB heights were 70 meV for hole and 100 meV for electron in p- and n-type FETs, respectively. Furthermore, the barrier height was able to be modulated by changing the doping level, which indicates the possibility of controlling the characteristics of RN-SWNT-FETs.
| Original language | English |
|---|---|
| Article number | 013112 |
| Journal | Applied Physics Letters |
| Volume | 89 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2006 |
| Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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Cite this
Nakamura, S., Ohishi, M., Shiraishi, M., Takenobu, T., Iwasa, Y., & Kataura, H. (2006). Band structure modulation by carrier doping in random-network carbon nanotube transistors. Applied Physics Letters, 89(1), [013112]. https://doi.org/10.1063/1.2219389