Band structure modulation by carrier doping in random-network carbon nanotube transistors

Shuichi Nakamura; Megumi Ohishi; Masashi Shiraishi; Taishi Takenobu; Yoshihiro Iwasa; Hiromichi Kataura

doi:10.1063/1.2219389

Band structure modulation by carrier doping in random-network carbon nanotube transistors

Shuichi Nakamura, Megumi Ohishi, Masashi Shiraishi, Taishi Takenobu, Yoshihiro Iwasa, Hiromichi Kataura

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

We investigated a role of a Schottky barrier (SB) in carrier doped random-network single-walled carbon nanotube field effect transistors (RN-SWNT-FETs) and the precise estimation of the SB height by a suitable combination of the gate and source-drain voltages. The SB heights were 70 meV for hole and 100 meV for electron in p- and n-type FETs, respectively. Furthermore, the barrier height was able to be modulated by changing the doping level, which indicates the possibility of controlling the characteristics of RN-SWNT-FETs.

Original language	English
Article number	013112
Journal	Applied Physics Letters
Volume	89
Issue number	1
DOIs	https://doi.org/10.1063/1.2219389
Publication status	Published - 2006
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{2390480153d64bed8841d9e09d0ead8a,

title = "Band structure modulation by carrier doping in random-network carbon nanotube transistors",

abstract = "We investigated a role of a Schottky barrier (SB) in carrier doped random-network single-walled carbon nanotube field effect transistors (RN-SWNT-FETs) and the precise estimation of the SB height by a suitable combination of the gate and source-drain voltages. The SB heights were 70 meV for hole and 100 meV for electron in p- and n-type FETs, respectively. Furthermore, the barrier height was able to be modulated by changing the doping level, which indicates the possibility of controlling the characteristics of RN-SWNT-FETs.",

author = "Shuichi Nakamura and Megumi Ohishi and Masashi Shiraishi and Taishi Takenobu and Yoshihiro Iwasa and Hiromichi Kataura",

year = "2006",

doi = "10.1063/1.2219389",

language = "English",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "1",

}

TY - JOUR

T1 - Band structure modulation by carrier doping in random-network carbon nanotube transistors

AU - Nakamura, Shuichi

AU - Ohishi, Megumi

AU - Shiraishi, Masashi

AU - Takenobu, Taishi

AU - Iwasa, Yoshihiro

AU - Kataura, Hiromichi

PY - 2006

Y1 - 2006

N2 - We investigated a role of a Schottky barrier (SB) in carrier doped random-network single-walled carbon nanotube field effect transistors (RN-SWNT-FETs) and the precise estimation of the SB height by a suitable combination of the gate and source-drain voltages. The SB heights were 70 meV for hole and 100 meV for electron in p- and n-type FETs, respectively. Furthermore, the barrier height was able to be modulated by changing the doping level, which indicates the possibility of controlling the characteristics of RN-SWNT-FETs.

AB - We investigated a role of a Schottky barrier (SB) in carrier doped random-network single-walled carbon nanotube field effect transistors (RN-SWNT-FETs) and the precise estimation of the SB height by a suitable combination of the gate and source-drain voltages. The SB heights were 70 meV for hole and 100 meV for electron in p- and n-type FETs, respectively. Furthermore, the barrier height was able to be modulated by changing the doping level, which indicates the possibility of controlling the characteristics of RN-SWNT-FETs.

UR - http://www.scopus.com/inward/record.url?scp=33745788571&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33745788571&partnerID=8YFLogxK

U2 - 10.1063/1.2219389

DO - 10.1063/1.2219389

M3 - Article

AN - SCOPUS:33745788571

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 1

M1 - 013112

ER -