Band-tail photoluminescence in hydrogenated amorphous silicon oxynitride and silicon nitride films

Hiromitsu Kato; Norihide Kashio; Yoshimichi Ohki; Kwang Soo Seol; Takashi Noma

doi:10.1063/1.1529292

Band-tail photoluminescence in hydrogenated amorphous silicon oxynitride and silicon nitride films

Hiromitsu Kato^*, Norihide Kashio, Yoshimichi Ohki, Kwang Soo Seol, Takashi Noma

^*Corresponding author for this work

Kagami Memorial Research Institute for Materials Science and Technology

Research output: Contribution to journal › Article › peer-review

74 Citations (Scopus)

Abstract

The photoluminescence (PL) in the hydrogenated samples of amorphous silicon oxynitride and silicon nitride films with different nitrogen contents was investigated. The PL of the two materials showed many similarities indicating the same chemical structure, viz. Si-N bonds, and similar band-tail states. The PL decay process indicated that the recombination between localized band-tail states consisted of excitonlike and radiative tunneling recombination processes. Increase in the abundance ratio of nitrogen+oxygen or that of nitrogen resulted in a wider PL spectrum with higher peak energy.

Original language	English
Pages (from-to)	239-244
Number of pages	6
Journal	Journal of Applied Physics
Volume	93
Issue number	1
DOIs	https://doi.org/10.1063/1.1529292
Publication status	Published - 2003 Jan 1

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.1529292

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abstract = "The photoluminescence (PL) in the hydrogenated samples of amorphous silicon oxynitride and silicon nitride films with different nitrogen contents was investigated. The PL of the two materials showed many similarities indicating the same chemical structure, viz. Si-N bonds, and similar band-tail states. The PL decay process indicated that the recombination between localized band-tail states consisted of excitonlike and radiative tunneling recombination processes. Increase in the abundance ratio of nitrogen+oxygen or that of nitrogen resulted in a wider PL spectrum with higher peak energy.",

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AU - Seol, Kwang Soo

AU - Noma, Takashi

PY - 2003/1/1

Y1 - 2003/1/1

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AB - The photoluminescence (PL) in the hydrogenated samples of amorphous silicon oxynitride and silicon nitride films with different nitrogen contents was investigated. The PL of the two materials showed many similarities indicating the same chemical structure, viz. Si-N bonds, and similar band-tail states. The PL decay process indicated that the recombination between localized band-tail states consisted of excitonlike and radiative tunneling recombination processes. Increase in the abundance ratio of nitrogen+oxygen or that of nitrogen resulted in a wider PL spectrum with higher peak energy.

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Band-tail photoluminescence in hydrogenated amorphous silicon oxynitride and silicon nitride films

Abstract

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