Band-tail photoluminescence in hydrogenated amorphous silicon oxynitride and silicon nitride films

Hiromitsu Kato, Norihide Kashio, Yoshimichi Ohki, Kwang Soo Seol, Takashi Noma

    Research output: Contribution to journalArticle

    69 Citations (Scopus)

    Abstract

    The photoluminescence (PL) in the hydrogenated samples of amorphous silicon oxynitride and silicon nitride films with different nitrogen contents was investigated. The PL of the two materials showed many similarities indicating the same chemical structure, viz. Si-N bonds, and similar band-tail states. The PL decay process indicated that the recombination between localized band-tail states consisted of excitonlike and radiative tunneling recombination processes. Increase in the abundance ratio of nitrogen+oxygen or that of nitrogen resulted in a wider PL spectrum with higher peak energy.

    Original languageEnglish
    Pages (from-to)239-244
    Number of pages6
    JournalJournal of Applied Physics
    Volume93
    Issue number1
    DOIs
    Publication statusPublished - 2003 Jan 1

    Fingerprint

    oxynitrides
    silicon nitrides
    amorphous silicon
    nitrides
    photoluminescence
    nitrogen
    decay
    oxygen
    energy

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)
    • Physics and Astronomy(all)

    Cite this

    Band-tail photoluminescence in hydrogenated amorphous silicon oxynitride and silicon nitride films. / Kato, Hiromitsu; Kashio, Norihide; Ohki, Yoshimichi; Seol, Kwang Soo; Noma, Takashi.

    In: Journal of Applied Physics, Vol. 93, No. 1, 01.01.2003, p. 239-244.

    Research output: Contribution to journalArticle

    Kato, Hiromitsu ; Kashio, Norihide ; Ohki, Yoshimichi ; Seol, Kwang Soo ; Noma, Takashi. / Band-tail photoluminescence in hydrogenated amorphous silicon oxynitride and silicon nitride films. In: Journal of Applied Physics. 2003 ; Vol. 93, No. 1. pp. 239-244.
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