Battery-inspired, nonvolatile, and rewritable memory architecture

A radical polymer-based organic device

Yasunori Yonekuta, Kentaro Susuki, Kenichi Oyaizu, Kenji Honda, Hiroyuki Nishide

Research output: Contribution to journalArticle

98 Citations (Scopus)

Abstract

A nonvolatile, bistable, and rewritable organic memory device based on radical polymers was prepared and tested. The excellent performance of a battery-inspired memory architecture with a configuration of p- and n-type charge-transporting radical polymers sandwiching a dielectric layer was characterized. The ON-OFF ratio was more than 4 orders of magnitude, and retention and endurance cycles of more than 104 and 103, respectively, were accomplished.

Original languageEnglish
Pages (from-to)14128-14129
Number of pages2
JournalJournal of the American Chemical Society
Volume129
Issue number46
DOIs
Publication statusPublished - 2007 Nov 21

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Memory architecture
Polymers
Equipment and Supplies
Durability
Data storage equipment
Retention (Psychology)

ASJC Scopus subject areas

  • Chemistry(all)

Cite this

Battery-inspired, nonvolatile, and rewritable memory architecture : A radical polymer-based organic device. / Yonekuta, Yasunori; Susuki, Kentaro; Oyaizu, Kenichi; Honda, Kenji; Nishide, Hiroyuki.

In: Journal of the American Chemical Society, Vol. 129, No. 46, 21.11.2007, p. 14128-14129.

Research output: Contribution to journalArticle

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