Beam-induced nanoscale ripple formation on silicon with the metal-cluster-complex ion of Ir4(CO)7 +

Yukio Fujiwara, Kouji Kondou, Kouji Watanabe, Hidehiko Nonaka, Naoaki Saito, Hiroshi Itoh, Toshiyuki Fujimoto, Akira Kurokawa, Shingo Ichimura, Mitsuhiro Tomita

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The surface topography of Si(100) bombarded with 2.5-10keV Ir 4(CO)7 + at an incident angle of 45° was investigated by atomic force microscopy. Experimental results showed that self-organized ripple structures with a wavelength below 30 nm were produced at a beam energy of 5 keV. It was found that the wavelength of the ripples increased with decreasing beam energy, which is different from results obtained using conventional ion beams. In addition, surface roughness proved to increase with decreasing beam energy. The phenomena were explained by considering a substantial decrease in sputtering yield and the subsequent compositional change in the target at lower-beam-energy Ir4(CO)7 + bombardment. Furthermore, the surface roughness was also confirmed to increase with increasing oxygen partial pressure.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume46
Issue number33-35
DOIs
Publication statusPublished - 2007 Sep 7
Externally publishedYes

Fingerprint

metal clusters
ripples
Surface roughness
Silicon
Wavelength
Ions
Surface topography
silicon
Metals
Partial pressure
Ion beams
Sputtering
Atomic force microscopy
surface roughness
ions
Oxygen
energy
wavelengths
partial pressure
bombardment

Keywords

  • AFM
  • Ion beam
  • Ir(CO)
  • Metal cluster complex
  • Nanotechnology
  • Ripple
  • Silicon
  • Sputtering
  • Surface roughness
  • Surface topography

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Beam-induced nanoscale ripple formation on silicon with the metal-cluster-complex ion of Ir4(CO)7 + . / Fujiwara, Yukio; Kondou, Kouji; Watanabe, Kouji; Nonaka, Hidehiko; Saito, Naoaki; Itoh, Hiroshi; Fujimoto, Toshiyuki; Kurokawa, Akira; Ichimura, Shingo; Tomita, Mitsuhiro.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 46, No. 33-35, 07.09.2007.

Research output: Contribution to journalArticle

Fujiwara, Y, Kondou, K, Watanabe, K, Nonaka, H, Saito, N, Itoh, H, Fujimoto, T, Kurokawa, A, Ichimura, S & Tomita, M 2007, 'Beam-induced nanoscale ripple formation on silicon with the metal-cluster-complex ion of Ir4(CO)7 + ', Japanese Journal of Applied Physics, Part 2: Letters, vol. 46, no. 33-35. https://doi.org/10.1143/JJAP.46.L854
Fujiwara, Yukio ; Kondou, Kouji ; Watanabe, Kouji ; Nonaka, Hidehiko ; Saito, Naoaki ; Itoh, Hiroshi ; Fujimoto, Toshiyuki ; Kurokawa, Akira ; Ichimura, Shingo ; Tomita, Mitsuhiro. / Beam-induced nanoscale ripple formation on silicon with the metal-cluster-complex ion of Ir4(CO)7 + In: Japanese Journal of Applied Physics, Part 2: Letters. 2007 ; Vol. 46, No. 33-35.
@article{233acd62cfc04ced9d2c3a2a6c028dfb,
title = "Beam-induced nanoscale ripple formation on silicon with the metal-cluster-complex ion of Ir4(CO)7 +",
abstract = "The surface topography of Si(100) bombarded with 2.5-10keV Ir 4(CO)7 + at an incident angle of 45° was investigated by atomic force microscopy. Experimental results showed that self-organized ripple structures with a wavelength below 30 nm were produced at a beam energy of 5 keV. It was found that the wavelength of the ripples increased with decreasing beam energy, which is different from results obtained using conventional ion beams. In addition, surface roughness proved to increase with decreasing beam energy. The phenomena were explained by considering a substantial decrease in sputtering yield and the subsequent compositional change in the target at lower-beam-energy Ir4(CO)7 + bombardment. Furthermore, the surface roughness was also confirmed to increase with increasing oxygen partial pressure.",
keywords = "AFM, Ion beam, Ir(CO), Metal cluster complex, Nanotechnology, Ripple, Silicon, Sputtering, Surface roughness, Surface topography",
author = "Yukio Fujiwara and Kouji Kondou and Kouji Watanabe and Hidehiko Nonaka and Naoaki Saito and Hiroshi Itoh and Toshiyuki Fujimoto and Akira Kurokawa and Shingo Ichimura and Mitsuhiro Tomita",
year = "2007",
month = "9",
day = "7",
doi = "10.1143/JJAP.46.L854",
language = "English",
volume = "46",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "33-35",

}

TY - JOUR

T1 - Beam-induced nanoscale ripple formation on silicon with the metal-cluster-complex ion of Ir4(CO)7 +

AU - Fujiwara, Yukio

AU - Kondou, Kouji

AU - Watanabe, Kouji

AU - Nonaka, Hidehiko

AU - Saito, Naoaki

AU - Itoh, Hiroshi

AU - Fujimoto, Toshiyuki

AU - Kurokawa, Akira

AU - Ichimura, Shingo

AU - Tomita, Mitsuhiro

PY - 2007/9/7

Y1 - 2007/9/7

N2 - The surface topography of Si(100) bombarded with 2.5-10keV Ir 4(CO)7 + at an incident angle of 45° was investigated by atomic force microscopy. Experimental results showed that self-organized ripple structures with a wavelength below 30 nm were produced at a beam energy of 5 keV. It was found that the wavelength of the ripples increased with decreasing beam energy, which is different from results obtained using conventional ion beams. In addition, surface roughness proved to increase with decreasing beam energy. The phenomena were explained by considering a substantial decrease in sputtering yield and the subsequent compositional change in the target at lower-beam-energy Ir4(CO)7 + bombardment. Furthermore, the surface roughness was also confirmed to increase with increasing oxygen partial pressure.

AB - The surface topography of Si(100) bombarded with 2.5-10keV Ir 4(CO)7 + at an incident angle of 45° was investigated by atomic force microscopy. Experimental results showed that self-organized ripple structures with a wavelength below 30 nm were produced at a beam energy of 5 keV. It was found that the wavelength of the ripples increased with decreasing beam energy, which is different from results obtained using conventional ion beams. In addition, surface roughness proved to increase with decreasing beam energy. The phenomena were explained by considering a substantial decrease in sputtering yield and the subsequent compositional change in the target at lower-beam-energy Ir4(CO)7 + bombardment. Furthermore, the surface roughness was also confirmed to increase with increasing oxygen partial pressure.

KW - AFM

KW - Ion beam

KW - Ir(CO)

KW - Metal cluster complex

KW - Nanotechnology

KW - Ripple

KW - Silicon

KW - Sputtering

KW - Surface roughness

KW - Surface topography

UR - http://www.scopus.com/inward/record.url?scp=34648819011&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34648819011&partnerID=8YFLogxK

U2 - 10.1143/JJAP.46.L854

DO - 10.1143/JJAP.46.L854

M3 - Article

AN - SCOPUS:34648819011

VL - 46

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 33-35

ER -