Abstract
We fabricated quasi-stadium laser diode which has a 'window' on the top of cavity by ion-etching technique to epitaxial wafer and demonstrated to observe direct lasing mode observation. In the carrier poor region, bright line can recognize. On the other hands, in the rich carrier region, lasing pattern was recognized as dark line. Both lines well fit extended Fox-Li simulation. From these results, it can understand that the lasing pattern condition depend the carrier density.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of 2007 9th International Conference on Transparent Optical Networks, ICTON 2007 |
| Pages | 162-165 |
| Number of pages | 4 |
| Volume | 4 |
| DOIs | |
| Publication status | Published - 2007 |
| Externally published | Yes |
| Event | 2007 9th International Conference on Transparent Optical Networks, ICTON 2007 - Rome Duration: 2007 Jul 1 → 2007 Jul 5 |
Other
| Other | 2007 9th International Conference on Transparent Optical Networks, ICTON 2007 |
|---|---|
| City | Rome |
| Period | 07/7/1 → 07/7/5 |
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Keywords
- Axis mode
- Lasing mode pattern
- Quasi-stadium laser
- Ring mode
ASJC Scopus subject areas
- Computer Networks and Communications
- Electrical and Electronic Engineering
- Communication
Cite this
Beam mode observation in quasi-stadium laser diodes. / Nakae, Yutaka; Takehana, Hiroki; Sasaki, Takahiko; Fukushima, Takehiro; Harayama, Takahisa.
Proceedings of 2007 9th International Conference on Transparent Optical Networks, ICTON 2007. Vol. 4 2007. p. 162-165 4296367.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Beam mode observation in quasi-stadium laser diodes
AU - Nakae, Yutaka
AU - Takehana, Hiroki
AU - Sasaki, Takahiko
AU - Fukushima, Takehiro
AU - Harayama, Takahisa
PY - 2007
Y1 - 2007
N2 - We fabricated quasi-stadium laser diode which has a 'window' on the top of cavity by ion-etching technique to epitaxial wafer and demonstrated to observe direct lasing mode observation. In the carrier poor region, bright line can recognize. On the other hands, in the rich carrier region, lasing pattern was recognized as dark line. Both lines well fit extended Fox-Li simulation. From these results, it can understand that the lasing pattern condition depend the carrier density.
AB - We fabricated quasi-stadium laser diode which has a 'window' on the top of cavity by ion-etching technique to epitaxial wafer and demonstrated to observe direct lasing mode observation. In the carrier poor region, bright line can recognize. On the other hands, in the rich carrier region, lasing pattern was recognized as dark line. Both lines well fit extended Fox-Li simulation. From these results, it can understand that the lasing pattern condition depend the carrier density.
KW - Axis mode
KW - Lasing mode pattern
KW - Quasi-stadium laser
KW - Ring mode
UR - http://www.scopus.com/inward/record.url?scp=48349123781&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=48349123781&partnerID=8YFLogxK
U2 - 10.1109/ICTON.2007.4296367
DO - 10.1109/ICTON.2007.4296367
M3 - Conference contribution
AN - SCOPUS:48349123781
SN - 142441248X
SN - 9781424412488
VL - 4
SP - 162
EP - 165
BT - Proceedings of 2007 9th International Conference on Transparent Optical Networks, ICTON 2007
ER -